MBR2035-F-CT [HDSEMI]
TO-220 Plastic-Encapsulate Diodes;
| 型号： | MBR2035-F-CT |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | TO-220 Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1399K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2035(F)CT THRU MBR20200(F)CT
HD TO102
TO-220 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
●I
20A
o
ITO- 220AB
TO- 220AB
●VRRM
35V-200V
●High surge current capability
Applications
●Rectifier
1
1
2
Marking
2
3
3
● MBR20XX(F)CT
PIN 1
PIN 3
PIN 2
CASE
:
XX From 35 To 200
MBR20 -(F)CT
Item
Symbol
Unit
Test Conditions
35
35
45 50 60 90 100
150 200
150 200
VRRM
Io
V
A
Repetitive Peak Reverse Voltage
Average Rectified Output Current
45 50 60 90
100
60HZ Half-sine wave, Resistance
load, Tc(Fig.1)
20
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
A
150
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
MBR20 -(F)CT
Item
Symbol
Unit
Test Condition
150 200
0.95
35
45 50 60 90 100
VF
IF =10.0A
V
0.7
0.8
0.85
Peak Forward Voltage
Peak Reverse Current
IRRM1
IRRM2
T =25℃
a
0.3
mA
VRM=VRRM
T =125℃
a
1.5
Thermal
Resistance(Typical)
2.01)
Rθ
℃/W
J-C
Between junction and case
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
24
20
16
12
8
210
180
150
120
90
8.3ms Single Half Sine Wave
JEDEC Method
60
4
30
0
50
70
90
110
130
150
Tc(℃)
0
1
10
100
Number of Cycles
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG3:Instantaneous Forward Voltage
60
10
40
20
10
Tj=125℃
MBR2035-45(F)CT
1.0
5.0
0.1
MBR2050-60(F)CT
MBR2090-100(F)CT
MBR20150-200(F)CT
Tj=75℃
1.0
0.5
0.01
0.2
0.1
Tj=25℃
40
Ta=25℃
0.001
0
20
60
80
100
0
0.1
0.2 0.3
0.7
0.6
0.9 1.0 1.1 1.2
VF(V)
0.4
0.8
0.5
Voltage(%)
2
H
igh Diode Semiconductor
TO- 220
TO-220AB
ITO-220AB
JSHD
JSHD
3
H
igh Diode Semiconductor
Part Number
tube
Quantity
50 pieces
Size（mm）
530*33*7
inner box
outer container
1000 pieces
5000 pieces
558*150*40
570*235*170
H
igh Diode Semiconductor
相关型号：
MBR2035CT
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
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