MSB30B [HDSEMI]
UMSB Plastic-Encapsulate Bridge Rectifier;
| 型号： | MSB30B |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | UMSB Plastic-Encapsulate Bridge Rectifier |
| 文件： | 总3页 (文件大小：1369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSB30B THRU MSB30M
HD DB80
UMSB Plastic-Encapsulate Bridge Rectifier
Features
●I
3A
50V-1000V
●High surge current capability
o
UMSB
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●
General purpose 1 phase Bridge
rectifier applications
Marking
● MB30X
X :
From B To M
MSB30
G
Item
Symbol Unit
Conditions
B
D
J
K
M
Repetitive Peak Reverse
Voltage
100
200 400
600 800 1000
VRRM
V
A
Average Rectified Output
Current
IO
60Hz sine wave, R-load, Tc=110℃
60HZ sine wave, 1 cycle, Tj=25℃
3
Surge(Non-
repetitive)Forward
Current
IFSM
A
95
I2t
A2S
1ms≤t<8.3ms Tj=25℃，Rating of per
37.45
Current Squared Time
Storage Temperature
Junction Temperature
diode
Tstg
Tj
-55 ~+150
-55 ~+150
℃
℃
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Max
Peak Forward Voltage
Peak Reverse Current
VFM
V
1.1
IFM=1.5A, Pulse measurement, Rating of per diode
Tj=25℃
Tj=125℃
5
IRRM
VRM=VRRM , Pulse measurement, Rating of per diode
μA
100
R
55
15
10
θJ-A
Between junction and ambient
Between junction and lead
R
R
Thermal Resistance
℃/W
θJ-L
θJ-C
Between junction and case
1
H
igh Diode Semiconductor
Typical Characteristics
FIG1:Io-Tc Curve
FIG2:Surge Forward Current Capadility
3.0
2.5
2.0
1.5
1.0
0.5
105
90
75
60
45
30
15
0
sine wave
0
8.3ms 8.3ms
1cycle
non-repetitive
Tj=25℃
0
1
2
5
10
20
50
100
0
40
80
120
160
Number of Cycles
Tc(℃)
FIG3: Forward Voltage
FIG4:Typical Reverse Characteristics
100
6
4
Tj=125℃
2
1
10
0.5
1.0
Ta=25℃
0.1
Tj=25℃
0.1
0.05
0.02
0.01
0.01
0
20
40
60
80
100
Voltage(%)
0.4
0.6
0.8
1.0
1.2
1.4
VF(V)
2
H
igh Diode Semiconductor
UMSB
E
L
f
∠ALL ROUND
V M
A
E1
UMSB mechanical data
b
f
E1
∠
A
C
D
E
e
L
UNIT
mm
max
1.5
1.3
59
51
0.29
0.17
12
7.0
6.2
276
244
7.6
8.9
8.4
1.6
1.0
55
39
5.3
4.9
1.15
0.95
45
0.8
0.6
31.5
24
min
7.1
299
280
10°
max
350
331
209
193
mil
min
7
37
UMSB
.280(7.10
)
.079(2.00)
.071(1.80)
.360(9.15)
JSHD
JSHD
3
H
igh Diode Semiconductor
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