RS5ABF [HDSEMI]
SMBF Plastic-Encapsulate Diodes;
| 型号： | RS5ABF |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMBF Plastic-Encapsulate Diodes |
| 文件： | 总4页 (文件大小：1385K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RS5ABF THRU RS5MBF
HD BF95
SMBF Plastic-Encapsulate Diodes
Fast Recovery Rectifier Diode
Features
●I
5A
50V-1000V
●High surge current capability
o
SMBF
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● RS5ABF-RS5MBF : RS5AB-RS5MB
RS5
ABF BBF DBF GBF JBF KBF MBF
Item
Symbol
Unit
Test Conditions
Repetitive Peak Reverse Voltage
VRRM
V
50
100 200 400 600 800 1000
MaximumRMS Voltage
35
70
140 280 420 560
700
V
V
RMS
60HZ Half-sine wave, Resistance
load, TL =100℃
Average Forward Current
IF(AV)
A
A
5
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
150
Junction Temperature
Storage Temperature
TJ
℃
℃
-55~+150
TSTG
-55 ~ +150
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
RS5
Item
Symbol
Test Condition
Unit
V
ABF BBF DBF GBF JBF KBF MBF
VF
trr
IF =5.0A
1.3
Peak Forward Voltage
Maximum reverse recovery
time
ns
IF=0.5A,IR=1.0A,Irr=0.25A
150
250
500
IRRM1
IRRM2
T =25℃
10
a
μA
VRM=VRRM
Peak Reverse Current
T =125℃
a
150
Rθ
Between junction and ambient
Between junction and terminal
40
12
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
7.0
6.0
5.0
4.0
3.0
2.0
1.0
150
125
100
75
8.3ms Single Half Sine Wave
50
Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
25
0
0
1
10
100
Number of Cycles
0
25
50
75
100
125
150
TL(℃)
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG.3: TYPICAL FORWARD CHARACTERISTICS
TJ=25℃
100
100
10
Pulse width=300us
1% Duty Cycle
Tj=125℃
10
1.0
0.1
1.0
0.1
Tj=25℃
0.01
0.6
0
20
40
60
80
100
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Voltage(%)
VF(V)
Diagram of circuit and Testing wave form of reverse recovery time
FIG.5
2
H
igh Diode Semiconductor
SMBF
2.16(5.50)
2.00(5.10)
.051(1.30)
.043(1.10)
1.73(4.40)
1.65(4.20)
0.86(2.20)
0.75(1.90)
1.46(3.70)
1.38(3.50)
.100(0.26)
.007(0.18)
.040(1.00)
Dimensions in inches and (millimeters)
SMBF
4.80
1.8
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMBF
3.80
5.75
0.150
0.226
4
H
igh Diode Semiconductor
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