S8550-SOT-23 [HDSEMI]
SOT-23 Plastic-Encapsulate Transistors;
| 型号： | S8550-SOT-23 |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SOT-23 Plastic-Encapsulate Transistors |
| 文件： | 总4页 (文件大小：2213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S8550
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
SOT- 23
●
●
Complimentary to S8050
Collector Current: IC=-0.5A
Marking:
●
2TY
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-40
Unit
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-25
C
V
-5
Collector Current
-500
300
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
PC
RΘJA
Tj
417
E
B
150
Storage Temperature
Tstg
-55～+150
℃
Electrical Characteristics (T=25℃ Unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC = -100μA, IE=0
IC =-1mA, IB=0
Min
-40
-25
-5
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
IE= -100μA, IC=0
VCB= -40V, IE=0
-0.1
-0.1
-0.1
400
μA
μA
μA
Collector cut-off current
ICEO
VCE= -20V, IB=0
Emitter cut-off current
IEBO
VEB= -3V, IC=0
hFE(1)
VCE= -1V, IC= -50mA
VCE= -1V, IC= -500mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
120
DC current gain
hFE(2)
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.6
-1.2
V
V
VCE= -6V, IC= -20mA
f=30MHz
Transition frequency
150
MHz
fT
CLASSIFICATION OF hFE
RANK
L
H
J
RANGE
120-200
200-350
300-400
1
H
igh Diode Semiconductor
Typical Characteristics
VCE
IC ——
IC
hFE ——
-90
-80
-70
-60
500
-400uA
COMMON
EMITTER
Ta=25℃
Ta=100℃
-360uA
-320uA
-280uA
Ta=25℃
-240uA
-200uA
-160uA
100
-50
-40
-30
-120uA
-80uA
-20
-10
-0
IB=-40uA
COMMON EMITTER
VCE=-1V
10
-0
-2
-4
-6
-8
-10
-12
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
IC
VBEsat ——
VCEsat ——
IC
-1200
-500
-800
-100
β=10
β=10
-10
-400
-500
-1
-10
-100
-500
-1
-10
-100
-500
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
fT ——
IC —— VBE
IC
400
-100
100
-10
COMMON EMITTER
CE=-6V
Ta=25℃
V
COMMON EMITTER
VCE=-1V
10
-1
-1
-10
-100
-0
-300
-600
-900
-1200
COLLECTOR CURRENT IC (mA)
BASE-EMMITER VOLTAGE VBE (mV)
Cob/Cib —— VCB/VEB
PC —— Ta
400
300
200
100
0
50
Cib
Cob
10
f=1MHz
IE=0/IC=0
Ta=25 ℃
1
-0.1
0
25
50
75
100
125
150
-1
-10
-20
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE Ta (℃)
2
H
igh Diode Semiconductor
SOT-23 Package Outline Dimensions
SOT-23
Suggested Pad Layout
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SOT-23
30
4
H
igh Diode Semiconductor
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