SMBJ140A [HDSEMI]
SMB Plastic-Encapsulate Diodes;
| 型号： | SMBJ140A |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMB Plastic-Encapsulate Diodes |
| 文件： | 总7页 (文件大小：1303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBJ SERIES
SMB Plastic-Encapsulate Diodes
Transient Voltage Suppressor Diodes
Features
●
PPP
●VRWM
1500W
5.0V- 440V
SMB
●
Glass passivated chip
Applications
●
Clamping Voltage
Marking
●SMBJ
XXCA/XXA/XX
Bi-directional
Uni-direction
:
XX From 5.0 To 440
Max
Item
Peak power dissipation
Peak pulse current
Symbol Unit
Conditions
with a 10/1000us waveform
PPPM
W
A
1500
with a 10/1000us waveform
On infinite heat sink at TL=75℃
IPPM
See Next Table
6.5
W
PD
Power dissipation
8.3 ms single half sine-wave unidirectional only
IFSM
A
200
Peak forward surge current
Operating junction and
storage temperature range
TJ,TSTG
℃
-55 to +150
Electrical Characteristics（T =25℃ Unless otherwise specified）
a
Max
Item
Symbol Unit
Conditions
VF
V
3.5/5.0
Maximum instantaneous forward
Voltage
at 100A for unidirectional only
RθJL
RθJA
℃/W
℃/W
75
15
junction to lead
Thermal resistance
junction to ambient
Notes:
(1)
(2)
(3)
Non-repetitive current pulse, per Fig. 3 and derated above TA= 25℃ per Fig.2.
Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
1
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
VBR@IT
Breakdown Voltage VBR@IT
IR @VWM
VRWM
Working Peak
Reverse
IPP
Maximum
Reverse Surge
Current IPP(2)
(A)
Maximum
Clamping
Voltage Vc
@ IPP
Maximum
Reverse
Leakage IR
(μA)
Part Number
(Uni)
Part Number
(Bi)
(3)
IT(1)(mA)
Voltage
RWM (V)
Min(V)
Max (V)
V
(V)
SMBJ5.0
SMBJ5.0A
SMBJ6.0
SMBJ6.0A
SMBJ6.5
SMBJ6.5A
SMBJ7.0
SMBJ7.0A
SMBJ7.5
SMBJ7.5A
SMBJ8.0
SMBJ8.0A
SMBJ8.5
SMBJ8.5A
SMBJ9.0
SMBJ9.0A
SMBJ10
SMBJ5.0C
SMBJ5.0CA(4)
SMBJ6.0C
SMBJ6.0CA
SMBJ6.5C
SMBJ6.5CA
SMBJ7.0C
SMBJ7.0CA
SMBJ7.5C
SMBJ7.5CA
SMBJ8.0C
SMBJ8.0CA
SMBJ8.5C
SMBJ8.5CA
SMBJ9.0C
SMBJ9.0CA
SMBJ10C
6.40
6.40
7.30
7.07
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1000
1000
1000
1000
500
500
200
200
100
100
50
50
20
20
10
10
5
5.0
156.2
163.0
131.6
145.6
121.9
133.9
112.7
125.0
104.9
116.3
100.0
110.3
94.3
104.2
88.7
97.4
79.8
88.2
74.6
82.4
68.2
75.4
63.0
69.8
58.1
64.7
55.7
61.5
52.1
57.7
49.2
54.3
46.5
51.4
44.1
48.7
41.9
46.3
38.1
42.3
9.6
5.0
6.0
9.2
6.67
8.15
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
34.0
30.8
35.8
32.4
39.4
35.5
6.67
7.37
6.0
7.22
8.82
6.5
7.22
7.98
6.5
7.78
9.51
7.0
7.78
8.60
7.0
8.33
10.20
9.21
7.5
8.33
7.5
8.89
10.90
9.83
8.0
8.89
8.0
9.44
11.50
10.40
12.20
11.10
13.60
12.30
14.90
13.50
16.30
14.70
17.60
15.90
19.10
17.20
20.40
18.50
21.80
19.70
23.10
20.90
24.40
22.10
25.70
23.30
27.10
24.50
29.80
26.90
8.5
9.44
8.5
10.00
10.00
11.10
11.10
12.20
12.20
13.30
13.30
14.40
14.40
15.60
15.60
16.70
16.70
17.80
17.80
18.90
18.90
20.00
20.00
21.10
21.10
22.20
22.20
24.40
24.40
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
19.0
19.0
20.0
20.0
22.0
22.0
SMBJ10A
SMBJ11
SMBJ10CA
SMBJ11C
5
5
SMBJ11A
SMBJ12
SMBJ11CA
SMBJ12C
5.
5
SMBJ12A
SMBJ13
SMBJ12CA
SMBJ13C
5
5
SMBJ13A
SMBJ14
SMBJ13CA
SMBJ14C
5
5
SMBJ14A
SMBJ15
SMBJ14CA
SMBJ15C
5
5
SMBJ15A
SMBJ16
SMBJ15CA
SMBJ16C
5
5
SMBJ16A
SMBJ17
SMBJ16CA
SMBJ17C
5
5
SMBJ17A
SMBJ18
SMBJ17CA
SMBJ18C
5
5
SMBJ18A
SMBJ19
SMBJ18CA
SMBJ19C
5
5
SMBJ19A
SMBJ20
SMBJ19CA
SMBJ20C
5
5
SMBJ20A
SMBJ22
SMBJ20CA
SMBJ22C
5
5
SMBJ22A
SMBJ22CA
5
2
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
VBR@IT
Breakdown Voltage VBR@IT
IR @VWM
VRWM
Working Peak
Reverse
Voltage
VRWM (V)
IPP
Maximum
Reverse Surge
Current IPP(2)
(A)
Maximum
Clamping
Voltage Vc
@ IPP
Maximum
Reverse
Leakage IR
(μA)
Part Number
(Uni)
Part Number
(Bi)
(3)
Min(V)
Max (V)
IT(1)(mA)
(V)
SMBJ24
SMBJ24A
SMBJ26
SMBJ26A
SMBJ28
SMBJ28A
SMBJ30
SMBJ30A
SMBJ33
SMBJ33A
SMBJ36
SMBJ36A
SMBJ40
SMBJ40A
SMBJ43
SMBJ43A
SMBJ45
SMBJ45A
SMBJ48
SMBJ48A
SMBJ51
SMBJ51A
SMBJ54
SMBJ54A
SMBJ58
SMBJ58A
SMBJ60
SMBJ60A
SMBJ64
SMBJ64A
SMBJ70
SMBJ70A
SMBJ75
SMBJ75A
SMBJ78
SMBJ78A
SMBJ80
SMBJ80A
SMBJ24C
SMBJ24CA
SMBJ26C
SMBJ26CA
SMBJ28C
SMBJ28CA
SMBJ30C
SMBJ30CA
SMBJ33C
SMBJ33CA
SMBJ36C
SMBJ36CA
SMBJ40C
SMBJ40CA
SMBJ43C
SMBJ43CA
SMBJ45C
SMBJ45CA
SMBJ48C
SMBJ48CA
SMBJ51C
SMBJ51CA
SMBJ54C
SMBJ54CA
SMBJ58C
SMBJ58CA
SMBJ60C
SMBJ60CA
SMBJ64C
SMBJ64CA
SMBJ70C
SMBJ70CA
SMBJ75C
SMBJ75CA
SMBJ78C
SMBJ78CA
SMBJ80C
SMBJ80CA
26.70
26.70
28.90
28.90
31.10
31.10
33.30
33.30
36.70
36.70
40.00
40.00
44.40
44.40
47.80
47.80
50.00
50.00
53.30
53.30
56.70
56.70
60.00
60.00
64.40
64.40
66.70
66.70
71.10
71.10
77.80
77.80
83.30
83.30
86.70
86.70
88.96
88.80
32.60
29.50
35.30
31.90
38.00
34.40
40.70
36.80
44.90
40.60
48.90
44.20
54.30
49.10
58.40
52.80
61.10
55.30
65.10
58.90
69.30
62.70
73.30
66.30
78.70
71.20
81.50
73.70
86.90
78.60
95.10
86.00
102.00
92.10
106.00
95.80
108.80
97.60
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40.0
40.0
43.0
43.0
45.0
45.0
48.0
48.0
51.0
51.0
54.0
54.0
58.0
58.0
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
80.0
80.0
34.9
38.6
32.2
35.6
30.0
33.0
28.0
31.0
25.4
28.1
23.3
25.8
21.0
23.3
19.6
21.6
18.7
20.6
17.5
19.4
16.4
18.2
15.5
17.2
14.5
16.0
14.0
15.5
13.1
14.5
12.0
13.3
11.2
12.4
10.8
11.9
10.4
11.6
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103.0
93.6
107.0
96.8
114.0
103.0
125.0
113.0
134.0
121.0
139.0
126.0
143.2
129.6
3
H
igh Diode Semiconductor
Electrical Characteristics (T =25 unless otherwise noted)
℃
A
V
BR@IT
IR @VWM
Maximum
Reverse
VRWM
Working Peak
Reverse
Voltage
VRWM (V)
IPP
Maximum
Reverse Surge
Current IPP(2)
(A)
Maximum
Clamping
Voltage Vc
@ IPP
Breakdown Voltage VBR@IT
Part Number
(Uni)
Part Number
(Bi)
(3)
Leakage IR
Min(V)
Max (V)
IT(1)(mA)
1.0
(V)
(μA)
SMBJ85
SMBJ85C
94.40
94.40
115.00
104.00
122.00
111.00
136.00
123.00
149.00
135.00
163.00
147.00
176.00
159.00
190.40
171.00
204.00
185.00
218.00
197.00
231.00
209.00
244.80
220.00
258.40
232.00
247.00
272.00
309.00
371.00
432.00
494.00
543.00
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
85.0
85.0
9.9
10.9
9.4
10.3
8.4
9.3
7.7
8.5
7.0
7.8
6.5
7.2
6.0
6.6
5.6
6.2
5.2
5.8
4.9
5.4
4.6
5.1
4.4
4.8
4.6
4.2
3.7
3.1
2.6
2.3
2.1
151.0
137.0
160.0
146.0
179.0
162.0
196.0
177.0
214.0
193.0
231.0
209.0
250.6
226.8
268.0
243.0
287.0
259.0
304.0
275.0
322.2
291.6
340.1
307.8
324.0
356.0
405.0
486.0
567.0
648.0
713.0
SMBJ85A
SMBJ90
SMBJ85CA
SMBJ90C
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
100.00
100.00
111.00
111.00
122.00
122.00
133.00
133.00
144.00
144.00
155.70
155.00
167.00
167.00
178.00
178.00
189.00
189.00
200.20
200.00
211.30
211.00
224.00
246.00
279.00
335.00
391.00
447.00
492.00
90.0
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ140
SMBJ140A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
SMBJ180
SMBJ180A
SMBJ190
SMBJ190A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
SMBJ90CA
SMBJ100C
SMBJ100CA
SMBJ110C
SMBJ110CA
SMBJ120C
SMBJ120CA
SMBJ130C
SMBJ130CA
SMBJ140C
SMBJ140CA
SMBJ150C
SMBJ150CA
SMBJ160C
SMBJ160CA
SMBJ170C
SMBJ170CA
SMBJ180C
SMBJ180CA
SMBJ190C
SMBJ190CA
SMBJ200CA
SMBJ220CA
SMBJ250CA
SMBJ300CA
SMBJ350CA
SMBJ400CA
SMBJ440CA
90.0
100.0
100.0
111.0
110.0
120.0
120.0
130.0
130.0
140.0
140.0
150.0
150.0
160.0
160.0
170.0
170.0
180.0
180.0
190.0
190.0
200.0
220.0
250.0
300.0
350.0
400.0
440.0
Notes:
(1) tp≤50ms Pulse test: tp≤50ms
Surge current waveform per Fig. 3 and derated per Fig.2.
(2)
(3) For bi-directional types having VWM of 10 V and less, the
limit is doubled
IR
(4)
For the bi-directional SMCJ5.0CA, the maximum VBR is 7.25 V
4
H
igh Diode Semiconductor
Typical Characteristics
FIG1:Peak Pulse Power Rating Curve
FIG2: Pulse Power or Current vs. Initial Junction Temperature
100
100
10
不重复脉冲波形见图 3
Non-Repetitive Pulse
Waveform shown in Fige.3
TA=25℃
75
50
1.0
25
0
0.31×0.31"(8.0×8.0mm)
Copper Pad Areas
0.1
0
25
50
75
100
125
150
175 200
0.1μs
1μs
10μs
100μs
1.0ms
10ms
TJ（℃）
td(μs)
FIG4:Typical Transient Thermal Impedance
FIG3: Pulse Waveform
100
150
tr=10μs
TJ=25℃
Pulse Width(td) is defined as
the Point where the Peak
Current Decays to 50% of IPPM
Peak Value
IPPM
10
100
50
0
Half Value - IPP
2
IPPM
1
10/1000μs Waveform as
Defined by R.E.A.
td
0.1
0
1.0
2.0
3.0
4.0
0.001
0.01
0.1
1
10
100
1000
tp(s)
t（ms）
FIG5: Maximum Non-Repetitive Surge Current
FIG6:Steady State Power Dissipation
7
6
5
4
3
2
1
200
TJ=TJMax.
8.3ms Single Half Sine-Wave
100
50
10
0
10
100
Number of Cycles
00
25
50
75
100 125 150 175 200
TL(℃)
5
H
igh Diode Semiconductor
SMB
0.155(3.94)
0.130(3.30)
0.087 (2.20)
0.071 (1.80)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
SMB
4.26
1.8
JSHD
JSHD
6
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices-SMB
7
H
igh Diode Semiconductor
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