US2AF [HDSEMI]
SMAF Plastic-Encapsulate Diodes;
| 型号： | US2AF |
| 厂家： | 
Jiangsu High diode Semiconductor Co., Ltd |
| 描述： | SMAF Plastic-Encapsulate Diodes 功效 光电二极管 |
| 文件： | 总4页 (文件大小：1368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
US2AF THRU US2MF
HD AF56
SMAF Plastic-Encapsulate Diodes
High Efficient Rectifier
Features
●I
2A
50V-1000V
●High surge current capability
o
SMAF
●VRRM
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● US2AF-US2MF : US2A-US2M
US2
Item
Symbol Unit
Test Conditions
AF BF DF FF GF JF KF MF
VRRM
V
50 100 200 300 400 600 800 1000
Repetitive Peak Reverse Voltage
35
70 140
210 280 420 560 700
Maximum RMS Voltage
V
V
RMS
60HZ Half-sine wave, Resistance
Average Forward Current
IF(AV)
A
A
2.0
load, TL =110℃
60Hz Half-sine wave ,1 cycle ,
Surge(Non-repetitive)Forward
Current
IFSM
50
Ta =25℃
Junction Temperature
Storage Temperature
TJ
℃
℃
-55~+150
-55~+150
TSTG
Electrical Characteristics (T =25℃ Unless otherwise specified）
a
US2
Item
Symbol
Unit
V
Test Condition
AF BF DF FF GF JF KF MF
VF
IF =2.0A
Peak Forward Voltage
1.0
1.3
1.7
Maximum reverse recovery
time
trr
ns
IF=0.5A,IR=1.0A,Irr=0.25A
50
75
IRRM1
IRRM2
T =25℃
5.0
a
Peak Reverse Current
μA
VRM=VRRM
T =100℃
a
100
801)
201)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
℃/W
Resistance(Typical)
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor
Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0
50
40
30
20
10
0
8.3ms Single Half Sine Wave
JEDEC Method
60Hz Resistive or Inductive Load
P.C.B. Mounted on 0.3"×0.3"(8.0mm×8.0mm)
Copper Pad Areas
1
10
100
Number of Cycles
50
70
90
110
130
150
TL(℃)
FIG.4：TYPICAL REVERSE CHARACTERISTICS
FIG.3: TYPICAL FORWARD CHARACTERISTICS
1000
10
1.0
TJ=25
Pulse width=300us
1% Duty Cycle
℃
HS2A-D
100
10
Tj=100
℃
0.1
HS2J-M
Tj=25
℃
HS2G
1.0
0.01
0.001
0.1
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Voltage(%)
VF(V)
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
trr
IF
RL
IF
VR
t
0
IRR
IR
2
H
igh Diode Semiconductor
SMAF
.193(4.90)
.173(4.40)
.047(1.20)
.035(0.90)
.146(3.70)
.130(3.30)
.063(1.60)
.051(1.30)
.106(2.70)
.094(2.40)
.009(0.23)
.007(0.18)
.051(1.30)
.039(1.00)
Dimensions in inches and (millimeters)
SMAF
4.65
0.55
JSHD
JSHD
3
H
igh Diode Semiconductor
Reel Taping Specifications For Surface Mount Devices- SMAF
4
H
igh Diode Semiconductor
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