2SC5120 [HITACHI]
High frequency amplifier; 高频放大器
| 型号： | 2SC5120 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | High frequency amplifier |
| 文件： | 总5页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5120
Silicon NPN Epitaxial
Application
TO–126FM
High frequency amplifier
Features
• Excellent high frequency characteristics
f = 500 MHz typ
T
• High voltage and low output capacitance
V
= 150 V, Cob = 5.0 pF typ
CEO
• Suitable for wide band video amplifier
1
2
3
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
V
150
V
CBO
———————————————————————————————————————————
Collector to emitter voltage
V
150
V
CEO
———————————————————————————————————————————
Emitter to base voltage
V
3
V
EBO
———————————————————————————————————————————
Collector current
I
0.2
A
C
———————————————————————————————————————————
Collector peak current
ic(peak)
0.4
A
———————————————————————————————————————————
Collector power dissipation
P
1.4
W
C
—————
8*1
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Tc = 25°C
2SC5120
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
———————————————————————————————————————————
Collector to base breakdown
V
150
—
—
V
I = 10 µA,
(BR)CBO
C
voltage
I = 0
E
———————————————————————————————————————————
Collector to emitter breakdown
V
150
—
—
V
I = 1 mA,
(BR)CEO
C
voltage
R
= ∞
BE
———————————————————————————————————————————
Collector cutoff current
I
—
—
10
µA
V
= 100 V,
CBO
CB
I = 0
E
———————————————————————————————————————————
Emitter cutoff current
I
—
—
10
µA
V
= 3 V,
EBO
EB
I
= 0
C
———————————————————————————————————————————
DC current transfer ratio
h
50
—
150
—
V
= 10 V,
FE
CE
I
= 10 mA
C
———————————————————————————————————————————
Collector to emitter saturation
voltage
V
—
—
1.0
V
I
= 50 mA
CE(sat)
C
B
I = 5 mA
———————————————————————————————————————————
Gain bandwidth product
f
400
500
—
MHz
V
= 20 V
T
CE
I
= 50 mA
C
———————————————————————————————————————————
Collector output capacitance
Cob
—
5.0
6.0
pF
V
= 30 V,
CB
I = 0
E
f=1MHz
———————————————————————————————————————————
2SC5120
Maximum Collector Dissipation Curve
Area of Safe Operation
8
6
4
2
1.0
0.5
1 shot pulse (Ta = 25 °C)
ic(peak)
I max
C
0.2
0.1
Tc
0.05
1.4W
Ta
0.02
0.01
0
50
100
150
200
10
20
50
100 200
500
(V)
Case Temperature Tc (°C)
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
Typical Output Characteristics
DC Current Transfer Ratio vs.
Collector Current
18 mA
20 mA
0.2
16 mA
1000
500
Tc = 75°C
25°C
200
100
50
0.1
–25°C
20
10
V
= 10 V
5
CE
Tc = 25 °C
Collector to Emitter Voltage V
I = 0
B
1
2
10 20
50 100 200
I (mA)
C
0
5
10
(V)
Collector Current
CE
2SC5120
Collector to Emitter Saturation Voltage
vs. Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
1000
500
10
5
I / I = 10
B
C
I
/ I = 10
B
C
200
2
1
–25°C
–25°C
Tc = 75°C
25°C
100
50
0.5
25°C
Tc = 75°C
20
10
0.2
0.1
1
2
5
10 20
50 100 200
(mA)
1
2
5
10 20
50 100 200
I (mA)
C
Collector Current
I
Collector Current
C
Gain Bandwidth Product vs.
Collector Current
Collector Output Capacitance
vs. Collector to Base Voltage
20
10
5
1000
500
200
100
50
I = 0
E
f = 1 MHz
2
1
V
= 20 V
CE
20
10
Tc = 25 °C
1
2
5
10 20
50 100 200
(mA)
1
2
5
10 20
50 100
(V)
Collector Current
I
Collector to Base Voltage V
C
CB
2SC5120
Package Outline
+0.15
φ
3.2 –0.1
8.0 ± 0.4
6.0
3.2 ± 0.4
1.7
0.7
0.65
2.29 ± 0.5
2.29 ± 0.5
TO–126FM
Hitachi Code
EIAJ
—
—
JEDEC
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