2SD1470 [HITACHI]
Silicon NPN Epitaxial, Darlington; 硅NPN外延，达林顿
| 型号： | 2SD1470 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial, Darlington |
| 文件： | 总6页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1470
Silicon NPN Epitaxial, Darlington
Application
Low frequency power amplifier
Outline
UPAK
1
2
3
2
1
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
3
2SD1470
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
60
VCEO
60
V
VEBO
7
V
IC
1
A
1
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC*2
Tj
*
2
A
1
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
60
60
7
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
IEBO
hFE
—
—
—
—
—
10
µA
µA
VCB = 60 V, IE = 0
—
10
VEB = 7 V, IC = 0
2000
—
100000
1.5
VCE = 3 V, IC = 0.5 A*1
IC = 500 mA, IB = 0.5 mA*1
Collector to emitter saturation VCE(sat)
voltage
V
V
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
IC = 500 mA, IB = 0.5 mA*1
Notes: 1. Pulse test
2. Marking is “AT”.
2
2SD1470
Maximum Collector Dissipation
Curve
Area of Safe Operation
10
1.2
0.8
0.4
3
iC(peak)
1.0
0.3
0.1
Ta = 25°C
1Shot Pulse
0.03
0.01
3
10
30
100
1,000
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
0.5
300
100
Ta = 25°C
0.4
0.3
0.2
0.1
Ta = 75°C
25
–25
30
10
4
VCE = 3 V
Pulse
2 µA
IB = 0
4
3
10
0
1
2
3
5
30
100
300
1,000
Collectot to Emitter Voltage VCE (V)
Collector Current IC (mA)
3
2SD1470
Saturation Voltage vs.
Collector Curret
10
3
VBE(sat)
VCE(sat)
1.0
0.3
0.1
Ta = 25°C
IC/IB = 1,000
10
30
100
300
1,000
Collector Current IC (mA)
Transient Thermal Resistance
300
100
30
10
3
Ta = 25°C
On the alumina ceramic board(12.5 × 30 × 0.7 mm)
1.0
0.3
1 m
10 m
100 m
1
10
100
1,000
Time t (s)
4
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
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Tel: 535-2100
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Germany
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Tel: <886> (2) 2718-3666
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Electronic Components Group.
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Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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