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2SD1472 [HITACHI]

Silicon NPN Epitaxial, Darlington; 硅NPN外延,达林顿
2SD1472
型号: 2SD1472
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Silicon NPN Epitaxial, Darlington
硅NPN外延,达林顿

文件: 总6页 (文件大小:36K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

2SD1472CT

Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3

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HITACHI

2SD1472CTTL

暂无描述

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HITACHI

2SD1472CTTR

暂无描述

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RENESAS

2SD1472CTTR-E

Silicon NPN Epitaxial, Darlington

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RENESAS

2SD1472CTUL

暂无描述

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RENESAS

2SD1472CTUR

1500mA, 120V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3

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RENESAS

2SD1474

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

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PANASONIC

2SD1474P

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | SOT-186

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ETC

2SD1474Q

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | SOT-186

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ETC

2SD1475

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3

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PANASONIC

2SD1475O

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186

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ETC

2SD1475P

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186

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ETC

2SD1475Q

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186

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ETC

2SD1475R

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | SOT-186

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ETC

2SD1476

Silicon NPN Power Transistor

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ISC

2SD1476O

Transistor

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ISC

2SD1476P

Transistor

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ISC

2SD1476Q

暂无描述

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ISC

2SD1476R

Transistor

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ISC

2SD1478

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

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PANASONIC