2SK2869(S)-(2) [HITACHI]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | 2SK2869(S)-(2) |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总12页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK2869
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-570 (Z)
1st. Edition
Sep. 1997
Features
•
Low on-resistance
RDS = 0.033 Ω typ.
•
•
High speed switching
4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D
1
2
3
G
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
S
2SK2869
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VDSS
VGSS
ID
60
±20
V
20
A
1
Drain peak current
Body to drain diode reverse drain current
Avalanche current
ID(pulse)
*
80
A
IDR
20
A
IAP*3
EAR*3
Pch*2
Tch
Tstg
20
A
Avalanche energy
34
mJ
W
°C
°C
Channel dissipation
Channel temperature
Storage temperature
30
150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50Ω
2
2SK2869
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±100µA, VDS = 0
Gate to source leak current
IGSS
IDSS
—
—
—
—
±10
µA
µA
VGS = ±16V, VDS = 0
Zero gate voltege drain
current
10
VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
1.5
—
—
10
—
—
—
—
—
—
—
—
—
2.5
0.045
0.07
—
V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V*1
ID = 10A, VGS = 4V*1
ID = 10A, VDS = 10V*1
VDS = 10V
0.033
0.055
16
Ω
resistance
RDS(on)
Ω
Forward transfer admittance |yfs|
S
Input capacitance
Output capacitance
Ciss
740
380
140
10
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
—
VGS = 0
Reverse transfer capacitance Crss
—
f = 1MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
—
ID = 10A, VGS = 10V
RL = 3Ω
110
105
120
1.0
—
Turn-off delay time
Fall time
—
—
Body to drain diode forward
voltage
VDF
—
IF = 20A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
40
—
V
IF = 20A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
3
2SK2869
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
200
40
30
20
10
100
50
20
10
5
Operation in
this area is
2
1
limited by R
DS(on)
0.5
Ta = 25 °C
0.2
0
50
100
150
200
1
2
5
10 20
50 100
(V)
Drain to Source Voltage
V
DS
Case Temperature Tc (°C)
Typical Transfer Characteristics
= 10 V
Typical Output Characteristics
50
40
30
20
10
20
16
12
8
10 V
6 V
5 V
V
DS
Pulse Test
Pulse Test
4.5 V
4 V
25°C
3.5 V
Tc = 75°C
4
V
GS
= 3 V
–25°C
0
0
1
2
3
4
GS
5
2
4
6
8
10
Gate to Source Voltage
V
(V)
Drain to Source Voltage
V
(V)
DS
4
2SK2869
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
0.5
1.0
0.8
0.6
0.4
0.2
Pulse Test
Pulse Test
0.2
0.1
I
= 15 A
D
V
GS
= 4 V
0.05
10 V
10 A
5 A
0.02
0.01
12
Gate to Source Voltage
0
4
8
16
20
0.1 0.2 0.5
1
2
5
10 20 50
(A)
V
(V)
Drain Current
I
GS
D
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
0.10
Pulse Test
10 A
Tc = –25 °C
20
10
5
0.08
0.06
0.04
0.02
2, 5 A
25 °C
V
= 4 V
GS
75 °C
2, 5, 10 A
2
10 V
1
V
= 10 V
DS
Pulse Test
0
–40
0.5
0.1 0.3
0
40
80
120
160
1
3
10
D
30
(A)
100
Case Temperature Tc (°C)
Drain Current I
5
2SK2869
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
5000
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
2000
1000
500
GS
Ciss
200
100
50
Coss
Crss
200
100
50
20
10
V
= 0
20
10
GS
f = 1 MHz
0.1 0.3
1
3
10
30
(A)
100
0
10
20
30
40
50
Reverse Drain Current
I
DR
Drain to Source Voltage V
(V)
DS
Dynamic Input Characteristics
= 20 A
Switching Characteristics
100
80
60
40
20
20
1000
I
D
300
100
16
12
8
t
d(off)
V
= 50 V
25 V
DD
t
f
10 V
V
DS
30
10
V
GS
t
r
t
d(on)
4
0
V
= 50 V
25 V
DD
3
1
V
= 10 V, V
= 30 V
GS
DD
PW = 5 µs, duty < 1 %
10 30
(A)
10 V
0
8
16
24
32
40
0.1 0.3
1
3
100
Gate Charge Qg (nc)
Drain Current
I
D
6
2SK2869
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
40
32
24
16
I
V
= 20 A
= 25 V
AP
DD
duty < 0.1 %
Ω
Rg > 50
10 V
5 V
V
= 0, –5 V
GS
4
8
0
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
25
50
75
100
125
150
Source to Drain Voltage
V
(V)
SD
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
V
DSS
1
2
2
E
=
• L • I
•
AP
AR
V
– V
DD
DSS
L
V
DS
Monitor
I
AP
V
(BR)DSS
Monitor
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
15 V
50Ω
V
DD
0
7
2SK2869
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 4.17 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
R
L
10%
10%
Vin
V
DD
Vin
10 V
Vout
10%
50Ω
= 30 V
90%
tr
90%
td(off)
td(on)
t
f
8
2SK2869
Package Dimensions
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.15 ± 0.1
1.2 ± 0.3
0.8 ± 0.1
(0.7)
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
DPAK (L)-(2)
JEDEC
—
EIAJ
—
Mass (reference value)
0.42 g
9
2SK2869
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(4.9)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
DPAK (S)-(1),(2)
—
Conforms
0.28 g
Mass (reference value)
10
2SK2869
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(5.1)
(0.1)
(0.1)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
DPAK (S)-(3)
—
Conforms
0.28 g
Mass (reference value)
11
2SK2869
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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(America) Inc.
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
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URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
12
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