3SK186FI-TR [HITACHI]
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4;
| 型号： | 3SK186FI-TR |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MPAK-4 晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 栅 放大器 |
| 文件： | 总6页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3SK186
Silicon N-Channel Dual Gate MOS FET
Application
UHF TV tuner RF amplifier
Outline
MPAK-4
2
3
1
1. Source
2. Gate1
3. Gate2
4. Drain
4
3SK186
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
12
Unit
V
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
VG1S
VG2S
ID
±10
V
±10
V
35
mA
mW
°C
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
150
125
Tstg
–55 to +125
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSX 12
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
—
—
V
VG1S = VG2S = –5 V,
ID = 200 µA
Gate 1 to source breakdown
voltage
V(BR)G1SS ±10
V(BR) G2SS ±10
—
—
—
—
V
V
IG1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
IG2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
Gate 2 cutoff current
IG1SS
IG2SS
—
—
—
—
±100
±100
–0.8
nA
nA
V
VG1S = ±8 V, VG2S = VDS = 0
VG2S = ±8 V, VG1S = VDS = 0
—
Gate 1 to source cutoff voltage VG1S(off)
+0.5
VDS = 6 V, VG2S = 3V,
ID = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
+0.5
—
–0.8
V
VDS = 6 V, VG1S = 3V,
ID = 100 µA
Drain current
IDSS
|yfs|
0
—
—
4
mA
mS
VDS = 6 V, VG2S = 3V, VG1S = 0
Forward transfer admittance
15
—
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 kHz
Input capacitance
Output capacitance
Ciss
—
1.7
1.0
2.2
1.4
pF
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 MHz
Coss
—
—
16
pF
pF
dB
Reverse transfer capacitance Crss
0.017 0.03
Power gain
PG
19
—
VDS = 4 V, VG2S = 3V,
ID = 10 mA, f = 900 MHz
Noise figure
NF
—
3.0
4.5
dB
Note: Marking is “FI–”.
2
3SK186
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
1.2
20
16
12
8
300
200
100
1.6
1.4
VG2S = 3 V
4
VG1S = 0 V
0
2
4
6
8
10
0
50
100
150
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Drain Current vs. Gate 2
to Source Voltage
Drain Current vs. Gate 1
to Source Voltage
20
16
12
8
20
16
12
8
1.75
VDS = 4 V
1.5
2.5
3
1.25
VDS = 4 V
2
1.5
1.0
1.0
0.75
0.5
VG2S = 0.5 V
4
4
0.25
VG1S = 0
0
–0.8
0
0.8
1.6
2.4
3.2
4.0
0
0.8
1.6
2.4
3.2
Gate 2 to Source Voltage VG2S (V)
Gate 1 to Source Voltage VG1S (V)
3
3SK186
Forward Transfer Admittance vs.
Gate 1 to Source Voltage
Power Gain vs. Drain Current
20
16
12
8
20
16
12
8
2.5
2.0
3
VDS = 6 V
1.5
VDS = 4 V
G2S = 3 V
f = 900 MHz
1.0
VG2S = 0.5 V
V
4
4
0
–0.4
0
0.4
0.8
1.2
1.6
0
2
4
6
8
10
Gate 1 to Source Voltage VG1S (V)
Drain Current ID (mA)
Noise Figure vs. Drain Current
VDS = 4 V
10
8
V
G2S = 3 V
f = 900 MHz
6
4
2
0
2
4
6
8
10
Drain Current ID (mA)
4
Unit: mm
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
+ 0.1
– 0.06
+ 0.1
– 0.05
+ 0.1
– 0.05
0.16
0.4
0.4
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.4
0.6
0.85
0.95
1.8 ± 0.2
Hitachi Code
JEDEC
MPAK-4
—
EIAJ
Conforms
Weight (reference value) 0.013 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
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Tel: 535-2100
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Germany
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
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Telex: 40815 HITEC HX
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Electronic Components Group.
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Lower Cookham Road
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Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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