3SK239A [HITACHI]
GaAs Dual Gate MES FET; 砷化镓双栅场效应管MES
| 型号： | 3SK239A |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | GaAs Dual Gate MES FET |
| 文件： | 总6页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3SK239A
GaAs Dual Gate MES FET
Application
UHF RF amplifier
Features
·
·
Excellent low noise characteristics
(NF = 1.3 dB Typ at f = 900 MHz)
Capable of low voltage operation
Outline
3SK239A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
12
VG1S
VG2S
ID
–6
V
–6
V
50
mA
mW
°C
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
100
125
Tstg
–55 to +125
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source leakage current IDSX
—
—
50
µA
VDS = 12 V, VG1S = –3 V,
VG2S = 0
Gate 1 to source breakdown
voltage
V(BR)G1SS –6
V(BR)G2SS –6
—
—
—
—
V
V
IG1 = –10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
IG2 = –10 µA, VG1S = VDS = 0
Gate 1 leakage current
Gate 2 leakage current
Drain current
IG1SS
IG2SS
IDSS
—
—
14
—
—
–5
µA
µA
mA
V
VG1S = –5 V, VG2S = VDS = 0
VG2S = –5 V, VG1S = VDS = 0
VDS = 5 V, VG1S = VG2S = 0
—
–5
19
28
Gate 1 to source cutoff voltage VG1S(off)
–1.2
–1.6
VDS = 5 V, VG2S = 0,
ID = 100 µA
Gate 2 to source cutoff voltage VG2S(off)
—
20
—
–1.2
31
–1.6
—
V
VDS = 5 V, VG1S = 0,
ID = 100 µA
Forward transfer admittance
Input capacitance
|yfs|
mS
pF
VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 1 kHz
Ciss
Coss
0.58
0.36
1.0
0.6
VDS = 5 V, VG1S = VG2S = –3 V,
f = 1 MHz
Output capacitance
—
—
17
pF
pF
dB
Reverse transfer capacitance Crss
0.028 0.05
Power gain
PG
19
—
VDS = 5 V, VG2S = 1 V,
ID = 10 mA, f = 900 MHz
Noise figure
NF
—
1.3
2.0
dB
Note: Marking is “XR–”.
2
3SK239A
3
3SK239A
4
3SK239A
5
3SK239A
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
6
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