BB301 [HITACHI]
Build in Biasing Circuit MOS FET IC UHF RF Amplifier; 打造偏置电路MOS FET的IC UHF射频放大器
| 型号： | BB301 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
| 文件： | 总10页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB301C
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-507
1st. Edition
Features
•
•
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,
Rs = 0 conditions.
Outline
CMPAK–4
2
3
1
1. Source
2. Gate1
3. Gate2
4. Drain
4
BB301C
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate 1 to source voltage
6
VG1S
+6
–0
V
Gate 2 to source voltage
Drain current
VG2S
ID
±6
V
25
mA
mW
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
100
150
–55 to +150
°C
2
BB301C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSS
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
6
—
—
V
ID = 200 µA
V
G1S = VG2S = 0
IG1 = +10 µA
G2S = VDS = 0
IG2 = ±10 µA
G1S = VDS = 0
VG1S = +5 V
G2S = VDS = 0
VG2S = ±5 V
G1S = VDS = 0
Gate 1 to source breakdown
voltage
V(BR)G1SS +6
—
—
—
—
—
—
15
20
—
V
V
Gate 2 to source breakdown
voltage
V(BR)G2SS ±6
—
V
V
Gate 1 to source cutoff current IG1SS
Gate 2 to source cutoff current IG2SS
Gate 1 to source cutoff voltage VG1S(off)
Gate 2 to source cutoff voltage VG2S(off)
—
+100
±100
1.0
1.0
20
nA
nA
V
V
—
V
0.4
0.4
10
15
VDS = 5 V, VG2S = 4 V
ID = 100 µA
V
VDS = 5 V, VG1S = 5 V
ID = 100 µA
Drain current
ID(op)
|yfs|
mA
mS
VDS = 5 V, VG1 = 5 V
V
G2S = 4 V, RG = 100 kΩ
VDS = 5 V, VG1 = 5 V
G2S = 4 V
Forward transfer admittance
—
V
RG = 100 kΩ, f = 1 kHz
VDS = 5 V, VG1 = 5 V
VG2S = 4 V, RG = 100 kΩ
f = 1 MHz
Input capacitance
Output capacitance
Ciss
2.2
0.9
—
3.0
1.2
4.0
1.6
pF
pF
pF
dB
Coss
Reverse transfer capacitance Crss
0.018 0.04
Power gain
PG
22
26
—
VDS = 5 V, VG1 = 5 V
VG2S = 4 V
Noise figure
NF
—
1.3
1.9
dB
RG = 100 kΩ, f = 200 MHz
Note: Marking is “AW–”.
3
BB301C
Main Characteristics
Test Circuit for Operating Items (I
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
D(op)
V
G2
R
G1
G
Gate 1
Gate 2
Drain
Source
A
I
D
Application Circuit
= 4 to 0.3 V
V
= 5 V
V
DS
AGC
BBFET
Output
Input
R
G
V
= 5 V
GG
4
BB301C
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
200
150
100
50
30
25
20
15
10
5
VG2S = 4 V
G1 = VDS
V
0
0
50
100
150
200
1
2
3
4
5
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
Drain Current vs.
Gate2 to Source Voltage
Drain Current vs. Gate1 Voltage
25
20
15
10
5
20
16
12
8
VDS = 5 V
RG = 82 kΩ
4
VG2S = 1 V
VDS = VG1 = 5 V
0
0
1
2
3
4
5
1
2
3
4
5
Gate2 to Source Voltage VG2S (V)
Gate1 Voltage VG1 (V)
5
BB301C
Drain Current vs. Gate1 Voltege
VDS = 5 V
Drain Current vs. Gate1 Voltege
VDS = 5 V
20
16
12
8
20
16
12
8
RG = 150 kΩ
RG = 100 kΩ
3 V
4 V
2 V
VG2S = 1 V
4
4
VG2S = 1 V
0
0
1
2
3
4
5
1
2
3
4
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
30
25
20
15
10
5
30
25
20
15
10
5
VDS = 5 V
G = 100 kΩ
f = 1 kHz
VDS = 5 V
G = 82 kΩ
f = 1 kHz
R
R
2 V
2 V
VG2S = 1 V
4
VG2S = 1 V
0
0
1
2
3
4
5
1
2
3
5
Gate1 Voltage VG1 (V)
Gate1 Voltage VG1 (V)
6
BB301C
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
25
20
15
10
20
16
12
8
VDS = 5 V
G = 150 kΩ
f = 1 kHz
R
2 V
VDS = 5 V
V
G1 = 5 V
4
5
0
V
G2S = 4 V
f = 200 MHz
20 50 100 200
Gate Resistance RG (kΩ)
VG2S = 1 V
10
500 1000
0
1
2
3
4
5
Gate1 Voltage VG1 (V)
Noise Figure vs. Gate Resistance
VDS = 5 V
Power Gain vs. Drain Current
4
3
2
30
VG1 = 5 V
25
20
15
10
5
V
G2S = 4 V
f = 200 MHz
VDS = 5 V
VG1 = 5 V
1
0
V
G2S = 4 V
RG = variable
f = 200 MHz
0
10
20
50 100 200
500 1000
5
10
15
20
25
30
Gate Resistance RG (kΩ)
Drain Current ID (mA)
7
BB301C
Drain Current vs. Gate Resistance
Noise Figure vs. Drain Current
VDS = 5 V
30
25
20
15
10
4
3
2
1
VG1 = 5 V
V
G2S = 4 V
RG = variable
f = 200 MHz
VDS = 5 V
5
0
VG1= 5 V
V
G2S = 4 V
0
10
20
50 100 200
500 1000
5
10
15
20
25
30
Gate Resistance RG (kΩ)
Drain Current ID (mA)
Gain Reduction vs.
Input Capacitance vs.
Gate2 to Source Voltage
Gate2 to Source Voltage
VDS = 5 V
60
50
40
30
20
10
4
V
G1 = 5 V
V
G2S = 4 V
3
2
1
R
G = 100 kΩ
f = 200 MHz
VDS = 5 V
G1 = 5 V
G = 100 kΩ
V
R
f = 1 MHz
0
0
1
2
3
4
1
2
3
4
5
5
Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)
8
BB301C
Package Dimentions
Unit: mm
2.0±0.2
1.3
0.65 0.65
+ 0.1
– 0.06
0.16
+ 0.1
– 0.05
+ 0.1
0.3
0.3
– 0.05
3
4
2
0 ~ 0.1
1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
0.4
0.65
1.25
0.6
CMPAK-4
SC-82AB
—
Hitahi Code
EIAJ
JEDEC
9
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http:semiconductor.hitachi.com/
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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