BB402M [HITACHI]
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier; 打造偏置电路MOS FET的IC UHF / VHF射频放大器
| 型号： | BB402M |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
| 文件： | 总11页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB402M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-716A (Z)
2nd. Edition
Dec. 1998
Features
•
•
Build in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
•
•
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “BX–”.
2. BB402M is individual type number of HITACHI BBFET.
BB402M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate1 to source voltage
12
VG1S
+10
– 0
V
Gate2 to source voltage
Drain current
VG2S
ID
±10
V
25
mA
mW
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
150
150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
12
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS
ID = 200µA, VG1S = VG2S = 0
IG1 = +10µA, VG2S = VDS = 0
IG2 = ±10µA, VG1S = VDS = 0
VG1S = +9V, VG2S = VDS = 0
VG2S = ±9V, VG1S = VDS = 0
VDS = 9V, VG2S = 6V, ID = 100µA
VDS = 9V, VG1S = 9V, ID = 100µA
Gate1 to source breakdown voltage V(BR)G1SS +10
—
—
V
Gate2 to source breakdown voltage V(BR)G2SS ±10
—
—
V
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
IG1SS
—
—
0.4
0.4
9
—
+100
±100
1.0
1.0
18
nA
nA
V
IG2SS
—
VG1S(off)
VG2S(off)
ID(op)
0.7
0.7
13
V
mA
VDS = 9V, VG1 = 9V, VG2S = 6V
RG = 120kΩ
Forward transfer admittance
|yfs|
15
20
—
mS
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 120kΩ, f = 1kHz
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
ciss
coss
crss
PG
NF
2.2
0.8
—
3.0
1.1
4.0
1.5
pF
pF
pF
dB
dB
VDS = 9V, VG1 = 9V
VG2S =6V, RG = 120kΩ
f = 1MHz
0.017 0.04
22
—
26
—
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 120kΩ, f = 200MHz
Noise figure
1.7
2.2
2
BB402M
Main Characteristics
Test Circuit for Operating Items (I
, |yfs|, Ciss, Coss, Crss, NF, PG)
D(op)
V
G1
V
R
G2
G
Gate 2
Gate 1
Drain
A
Source
I
D
Power Gain, Noise Figure Test Circuit
V
V
G2
V
T
T
1000p
1000p
1000p
47k
BBFET
47k
1000p
1SV70
Output (50Ω)
47k
L1
1000p
L2
Input (50Ω)
10p max
1000p
1000p
RFC
1SV70
R
120k
36p
G
1000p
Unit Resistance (Ω)
V
= V
G1
D
Capacitance (F)
L1: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC: φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BB402M
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
= 6 V
25
20
15
10
5
200
150
100
50
V
V
G2S
= V
G1
DS
0
0
50
100
150
200
2
4
6
8
10
Drain to Source Voltage
V
(V)
DS
Ambient Temperature Ta (¡C)
Drain Current vs.
Gate2 to Source Voltage
Drain Current vs. Gate1 Voltage
25
20
15
10
5
20
16
12
8
V
R
= 9 V
= 100 k
DS
6 V
5 V
4 V
Ω
G
3 V
2 V
4
V
= 1 V
G2S
G1
V
= V = 9 V
G1
DS
0
0
2
4
6
8
10
1.2
2.4
3.8
4.8
6.0
(V)
Gate2 to Source Voltage
V
G2S
Gate1 Voltage
V
(V)
4
BB402M
Drain Current vs. Gate1 Voltege
Drain Current vs. Gate1 Voltege
20
16
12
8
20
16
12
8
V
R
= 9 V
= 150 k
DS
V
R
= 9 V
= 120 k
DS
Ω
G
Ω
G
6 V
5 V
4 V
6 V
5 V
4 V
3 V
3 V
2 V
2 V
4
4
V
= 1 V
V
6
= 1 V
G2S
G2S
0
0
2
4
8
10
2
4
6
8
10
Gate1 Voltage
V
(V)
Gate1 Voltage
V
(V)
G1
G1
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance
vs. Gate1 Voltage
25
20
15
10
5
25
20
15
10
5
V
R
= 9 V
= 100 k
f = 1 kHz
V
R
= 9 V
6 V
DS
6 V
5 V
DS
Ω
= 120 k
G
5 V
Ω
G
f = 1 kHz
4 V
3 V
2 V
2 V
V
6
= 1 V
V
6
= 1 V
G2S
G2S
0
0
2
4
8
10
2
4
8
10
Gate1 Voltage
V
(V)
Gate1 Voltage
V
(V)
G1
G1
5
BB402M
Forward Transfer Admittance
vs. Gate1 Voltage
Power Gain vs. Gate Resistance
30
25
20
15
10
25
20
15
10
5
V
R
= 9 V
DS
= 150 k
f = 1 kHz
Ω
G
4 V
6 V 5 V
3 V
2 V
V
V
V
= 9 V
= 9 V
DS
G1
5
0
= 6 V
G2S
f = 200 MHz
20 50 100 200
Gate Resistance R (k
V
= 1 V
G2S
0
10
500 1000
2
4
6
8
10
Gate1 Voltage
V
(V)
G1
)
Ω
G
Noise Figure vs. Gate Resistance
Power Gain vs. Drain Current
4
3
2
1
30
25
20
15
10
5
V
V
V
= 9 V
= 9 V
DS
G1
= 6 V
G2S
f = 200 MHz
V
V
V
= 9 V
= 9 V
DS
G1
= 6 V
G2S
R = variable
G
f = 200 MHz
0
0
10
20
50 100 200
500 1000
5
10
15
20
25
30
Drain Current I
(mA)
Gate Resistance R (k
)
Ω
G
D
6
BB402M
Noise Figure vs. Drain Current
Drain Current vs. Gate Resistance
4
3
2
1
30
25
20
15
10
V
V
V
= 9 V
= 9 V
DS
G1
= 6 V
G2S
R = variable
G
f = 200 MHz
V
V
V
= 9 V
= 9 V
DS
5
0
G1
= 6 V
G2S
0
5
10
15
20
25
10
20
50 100 200
500 1000
30
Drain Current I
(mA)
Gate Resistance R (k
G
)
Ω
D
Gain Reduction vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
60
50
40
30
20
10
6
5
4
3
2
1
0
V
V
V
= 9 V
= 9 V
DS
G1
= 6 V
G2S
R = 120 k
Ω
G
f = 200 MHz
V
V
= 9 V
= 9 V
DS
G1
R = 120 k Ω
G
f = 1 MHz
0
1
2
3
4
5
6
7
(V)
1
2
3
4
6
5
Gate2 to Source Voltage V
Gate2 to Source Voltage V
(V)
G2S
G2S
7
BB402M
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 1 / div.
1
90¡
.8
1.5
60¡
.6
120¡
2
.4
3
30¡
4
150¡
.2
0
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
180¡
0¡
—10
—5
—4
—.2
—30¡
—150¡
—3
—.4
—2
—60¡
—120¡
—.6
—1.5
—.8
—90¡
—1
Test Condition :
Test Condition :
V
V
= 9 V , V = 9 V
V
V
= 9 V , V = 9 V
DS
G1
DS
G1
= 6 V , R = 120 kΩ
= 6 V , R = 120 kΩ
G2S
G2S
G
G
50 1000 MHz (50 MHz step)
50 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Scale: 0.01 / div.
1
90¡
.8
1.5
60¡
.6
120¡
2
.4
3
30¡
150¡
4
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180¡
0¡
—10
—5
—4
—.2
—30¡
—150¡
—3
—.4
—2
—60¡
—120¡
—.6
—1.5
—.8
—90¡
—1
Test Condition :
Test Condition :
V
V
= 9 V , V = 9 V
G1
V
V
= 9 V , V = 9 V
G1
DS
DS
= 6 V , R = 120 kΩ
= 6 V , R = 120 kΩ
G2S
G
G2S
G
50 1000 MHz (50 MHz step)
50 1000 MHz (50 MHz step)
8
BB402M
Sparameter (VDS = VG1 = 9V, VG2S = 6V, RG = 120kΩ, Zo = 50Ω)
S11
S21
MAG
2.13
2.13
2.12
2.08
2.04
2.00
1.95
1.91
1.86
1.81
1.76
1.70
1.66
1.61
1.56
1.51
1.47
1.42
1.39
1.34
S12
S22
f (MHz) MAG
ANG
ANG
174.1
167.9
161.6
155.2
149.1
143.0
137.3
131.5
125.7
120.1
115.1
110.1
104.7
100.3
95.4
MAG
ANG
90.0
72.5
79.4
78.4
71.0
72.0
59.0
66.3
62.2
56.6
61.5
61.4
51.1
57.6
70.0
77.5
114.5
114.5
145.8
164.0
MAG
0.985
0.993
0.992
0.990
0.987
0.985
0.982
0.978
0.974
0.970
0.966
0.961
0.957
0.952
0.947
0.943
0.937
0.933
0.927
0.923
ANG
–1.3
50
0.988
0.986
0.979
0.964
0.948
0.939
0.920
0.904
0.885
0.864
0.848
0.826
0.808
0.789
0.773
0.755
0.735
0.721
0.703
0.677
–5.2
0.00052
0.00087
0.00156
0.00226
0.00254
0.00339
0.00335
0.00338
0.00351
0.00347
0.00355
0.00300
0.00289
0.00246
0.00211
0.00166
0.00165
0.00123
0.00176
0.00204
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
–10.4
–16.0
–21.5
–26.9
–32.0
–37.3
–42.3
–47.1
–51.7
–56.5
–60.9
–65.0
–69.4
–73.7
–77.9
–82.1
–86.3
–90.7
–93.9
–3.6
–5.5
–7.5
–9.6
–11.4
–13.3
–15.3
–17.1
–18.9
–21.0
–22.7
–24.5
–26.6
–28.3
–30.2
–32.2
–34.1
–35.9
–37.9
90.5
85.9
81.3
76.9
72.4
9
BB402M
Package Dimensions
Unit: mm
±0.2
±0.2
2.95
1.9
0.95 0.95
+ 0.1
— 0.06
0.16
+ 0.1
— 0.05
+ 0.1
0.4
0.4
— 0.05
4
3
0 0.1
2
1
+ 0.1
+ 0.1
— 0.05
0.6
0.4
— 0.05
0.85
1.8
0.95
MPAK—4R
Hitachi Code
EIAJ
JEDEC
10
BB402M
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. Hitachi bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact
Hitachi’s sales office before using the product in an application that demands especially high quality and
reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury,
such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment
or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed
ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in
semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating
Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the
Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Electronic components Group
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
2000 Sierra Point Parkway Dornacher Straße 3
Brisbane, CA 94005-1897 D-85622 Feldkirchen, Munich
Tel: <1> (800) 285-1601
Fax: <1> (303) 297-0447
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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