H5N2510DL [HITACHI]

Power Field-Effect Transistor, 5A I(D), 250V, 0.97ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3;
H5N2510DL
元器件型号: H5N2510DL
生产厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述和应用:

Power Field-Effect Transistor, 5A I(D), 250V, 0.97ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

开关 脉冲 晶体管
PDF文件: 总7页 (文件大小:33K)
下载文档:  下载PDF数据表文档文件
型号参数:H5N2510DL参数

H5N2510DL-E

Silicon N Channel MOS FET High Speed Power Switching

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6 RENESAS

H5N2510DS

Silicon N Channel MOS FET High Speed Power Switching

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15 RENESAS

H5N2510DS

Datasheet|ADE-208-1379|MAR.20.01|35K

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8 ETC

H5N2510DS

Power Field-Effect Transistor, 5A I(D), 250V, 0.97ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 HITACHI

H5N2510DSTL-E

Silicon N Channel MOS FET High Speed Power Switching

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17 RENESAS

H5N2512CF

Silicon N Channel MOS FET High Speed Power Switching

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7 RENESAS

H5N2512FL-M0

250V - 18A - MOS FET High Speed Power Switching

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14 RENESAS

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0 RENESAS

H5N2512FL-M0-ET2

250V - 18A - MOS FET High Speed Power Switching

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8 RENESAS

H5N2512FN

Silicon N Channel MOS FET High Speed Power Switching

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5 RENESAS

H5N2513PL

Silicon N Channel MOS FET High Speed Power Switching

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8 RENESAS

H5N2513PL-E

Silicon N Channel MOS FET High Speed Power Switching

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5 RENESAS

H5N2514P

Silicon N Channel MOS FET High Speed Power Switching

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7 RENESAS

H5N2514P-E

Silicon N Channel MOS FET High Speed Power Switching

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6 RENESAS

H5N2515P

Silicon N Channel MOS FET High Speed Power Switching

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9 RENESAS