HA13156 [HITACHI]
38 W x 4-Channel BTL Power IC; 38宽x 4通道BTL电源IC
| 型号： | HA13156 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | 38 W x 4-Channel BTL Power IC |
| 文件： | 总18页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HA13156
38 W × 4-Channel BTL Power IC
ADE-207-241 (Z)
1st. Edition
July 1997
Description
The HA13156 is four-channel BTL amplifier IC designed for car audio, featuring high output and low
distortion, and applicable to digital audio equipment. It provides 38 W output per channel, with a 13.7 V
power supply and at Max distortion.
Functions
•
•
•
•
•
4 ch BTL power amplifiers
Built-in standby circuit
Built-in muting circuit
Built-in protection circuit (surge, T.S.D, and ASO)
Built-in change booster ON/OFF circuit
Features
•
•
•
•
High power for booster circuit
Popping noise minimized
Low output noise
Built-in high reliability protection circuit
HA13156
Block Diagram
VCC
+
C11
0.47µ
C9
4400µ
16
6
24
INVCC
PVCC1
PVCC2
SW1
IN1
+
OUT1
2
1
STBY
3
C1 R1
0.1µ 2.2
C2 R2
0.1µ 2.2
Buffer & Mute-1
Buffer & Mute-2
Buffer & Mute-3
Buffer & Mute-4
PGND1
4
5
SP1
SP2
SP3
SP4
Amp1
Amp2
Amp3
IN2
11
12
28
10
–
+
OUT1
OUT2
7
IN3
C3 R3
0.1µ 2.2
C4 R4
0.1µ 2.2
PGND2
PGND3
PGND4
8
IN4
SW2
9
–
+
OUT2
OUT3
+
C12
R9
7.5k
MUTE
4.7µ
Protector
(ASO, Surge, TSD)
21
22
23
25
26
27
C5 R5
0.1µ 2.2
C6 R6
0.1µ 2.2
BST1
15
17
C14
0.47µ
Booster
BST2
–
+
OUT3
OUT4
SW3
BSTSW
13
CLKGEN
C7 R7
0.1µ 2.2
C8 R8
0.1µ 2.2
Amp4
–
OUT4
INGND
14
19
+
18
20
+
C10
TAB
BSTOUT
C13
100µ
2.2µ
Unit R: Ω
BSTGND
C: F
* C1 to C8 should be polyester film capacitors with no secondary resonance (non-inductive),
to assure stable operation.
2
HA13156
Note: 1. Standby
Power is turned on when a signal of 3.5 V or 0.05 mA is impressed at pin 2.
When pin 2 is open or connected to GND, standby is turned on (output off).
5 V
2
Q1 ON
↓
BIAS ON
37.5 k
23.5 k
2. Muting
Muting is turned off (output off) when a signal of 3.5 V or 0.2 mA is impressed at pin 10.
When pin 10 is open or connected to GND, muting is turned on (output off).
5 V
10
Q2 ON
↓
25 k
MUTE ON
3. DC-DC converter (Booster)
DC-DC converter (Booster) in IC is turned on when a signal of 3.5 V over or 0.04 mA over is
impressed at pin 13, and get large max output power.
When pin 13 is open or connected to GND, DC-DC converter (Booster) is turned off.
This IC is generated noise, because built-in DC-DC converter (Booster).
Consequently if you use radio tuner (AM), I recommend DC-DC converter (Booster) off.
5 V
13
Q3 ON
↓
Booster ON
30 k
20 k
3
HA13156
Absolute Maximum Ratings
Item
Symbol
VCC
Rating
Unit
V
Operating supply voltage
Supply voltage when no signal*1
Peak supply voltage*2
Output current*3
Power dissipation*4
Junction temperature
Operating temperature
Storage temperature
18
VCC (DC)
VCC (PEAK)
IO (PEAK)
PT
26
V
50
V
4
A
83
W
°C
°C
°C
Tj
150
Topr
–30 to +85
–55 to +125
Tstg
Note: 1. Tolerance within 30 seconds.
2. Tolerance in surge pulse waveform.
3. Value per 1 channel.
4. Value when attached on the infinite heat sink plate at Ta = 25 °C.
The derating carve is as shown in the graph below.
100
A: When heat sink is infinite (θj-a = 1.5°C/W)
B: When θf (thermal resistance of heat sink) = 3°C/W
(θj-a = 4.5°C/W)
83 W
A
50
28 W
B
100
Ambient temperature Ta (°C)
25
85
150
0
50
4
HA13156
Electrical Characteristics (VCC = 13.2 V, RL = 4 Ω, f = 1 kHz, Rg = 600 Ω, Ta = 25°C,
when there is no description in test conditions)
Item
Symbol
IQ1
Min
275
190
—
Typ
380
320
0.02
32
Max
480
420
0.1
Unit
mA
mA
%
Test Conditions
Quiescent current1
Quiescent current2
Total harmonic distortion
Gain
Vin = 0 V, boost on, RL = ∞
Vin = 0 V, boost off, RL = ∞
Po = 3 W, boost on, off
IQ2
T.H.D.
GV
30.5
–1.0
20
33.5
1.0
dB
dB
W
Gain difference between channels
Rated output power1
∆GV
PO1
0
23
—
VCC = 13.2 V, boost on,
RL = 4 Ω, THD = 10%
Rated output power2
Max output power1
Max output power2
Output noise voltage1
Output noise voltage2
PO2
17
35
31
—
—
20
—
W
VCC = 13.2 V, boost off,
RL = 4 Ω, THD = 10%
POMAX1
POMAX2
WBN1
WBN2
38
—
W
VCC = 13.7 V, boost on,
RL = 4 Ω
34
—
W
VCC = 13.7 V, boost off,
RL = 4 Ω
0.15
0.08
0.3
0.2
mVrms
mVrms
Rg = 0 Ω, mute off,
BW = 20 to 20 kHz
Rg = 0 Ω, mute on,
BW = 20 to 20 kHz
Ripple rejection
SVR
∆VQ1
∆VQ2
45
55
0
—
dB
f = 120 Hz
Output offset voltage1
Output offset voltage2
–250
–250
250
250
mV
mV
Vin = 0 V, mute off
0
Vin = 0 V, change value
of mute on → off
Standby current
IST
—
3.5
0
1
10
µA
V
boost off
Standby control voltage (high)
Standby control voltage (low)
Muting control voltage (high)
Muting control voltage (low)
Boost control voltage (high)
Boost control voltage (low)
Muting attenuation
VSTH
VSTL
VMH
VML
—
—
—
—
—
—
90
80
25
—
VCC
1.5
VCC
1.5
VCC
1.5
—
V
3.5
0
V
V
VBH
3.5
0
V
VBL
V
ATTM
C.T.
Zin
70
60
18
7
dB
dB
kΩ
Vp-p
Vout = 6.7 Vrms
Vout = 6.7 Vrms
Channel cross talk
—
Input impedance
33
Input voltage muted completly
ATTin
—
Note: boost on; Boost control voltage (high),
mute on; Muting control voltage (low)
5
HA13156
Characteristic Curves
Quiescent current vs. Supply Voltage
Booster ON
400
RL = ∞
Booster OFF
300
200
100
0
0
8
10
12
14
16
18
20
Supply Voltage VCC (V)
Output Power vs. Supply Voltage
RL = 4 Ω, f = 1 kHz
70
60
50
40
30
20
10
0
10
12
14
16
18
20
Supply Voltage VCC (V)
6
HA13156
Total Harmonic Distortion vs. Frequency (1)
5
VCC = 13.2 V, RL = 4 Ω, Booster ON
Po = 1.5 W (Ch1–Ch4)
Po = 8 W (Ch1–Ch4)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
20
50 100 200 500 1k 2k
Frequency f (Hz)
5k 10k 20k
Total Harmonic Distortion vs. Frequency (2)
5
VCC = 13.2 V, RL = 4 Ω, Booster OFF
Po = 1.5 W (Ch1–Ch4)
Po = 8 W (Ch1–Ch4)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
20
50 100 200 500 1k 2k
Frequency f (Hz)
5k 10k 20k
7
HA13156
Total Harmonic Distortion vs. Output Power (1)
10
5
VCC = 13.2 V, RL = 4 Ω, Booster ON
f = 100 Hz (Ch1–Ch4)
f = 1 kHz (Ch1–Ch4)
f = 10 kHz (Ch1–Ch4)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10 20 30
Output Power Po (W)
Total Harmonic Distortion vs. Output Power (2)
10
5
VCC = 13.2 V, RL = 4 Ω, Booster OFF
f = 100 Hz (Ch1–Ch4)
f = 1 kHz (Ch1–Ch4)
f = 10 kHz (Ch1–Ch4)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10 20
Output Power Po (W)
8
HA13156
Crosstalk vs. Frequency (1)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch1, Booster ON
Ch2
Ch3
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
Crosstalk vs. Frequency (2)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch1, Booster OFF
Ch2
Ch3
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
9
HA13156
Crosstalk vs. Frequency (3)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch2, Booster ON
Ch1
Ch3
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
Crosstalk vs. Frequency (4)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch2, Booster OFF
Ch1
Ch3
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
10
HA13156
Crosstalk vs. Frequency (5)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch3, Booster ON
Ch1
Ch2
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
Crosstalk vs. Frequency (6)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch3, Booster OFF
Ch1
Ch2
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
11
HA13156
Crosstalk vs. Frequency (7)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch4, Booster ON
Ch1
Ch2
Ch3
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
Crosstalk vs. Frequency (8)
90
80
70
60
50
40
30
20
10
VCC = 13.2 V, Vout = 6.7 Vrms,
Input Ch4, Booster OFF
Ch1
Ch2
Ch3
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
12
HA13156
Supply Voltage Rejection Ratio vs. Frequency (1)
80
70
60
50
40
30
20
10
0
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm,
Booster ON, Rg = 620 Ω
Ch1
Ch2
Ch3
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
Supply Voltage Rejection Ratio vs. Frequency (2)
80
70
60
50
40
30
20
10
0
VCC = 13.2 V, RL = 4 Ω, Vripple = 0 dBm,
Booster OFF, Rg = 620 Ω
Ch1
Ch2
Ch3
Ch4
20
50 100 200
500 1k
2k
5k 10k
Frequency f (Hz)
13
HA13156
Wide Band Noise vs. Signal Source Resistance (1)
5
VCC = 13.2 V, RL = 4 Ω,
Vin = 0, Booster ON
2
1
0.5
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
0.2
0.1
0.05
0.02
0.01
20
50 100 200 500 1k 2k
5k 10k 20k
50k
Signal Source Resistance Rg (Ω)
Wide Band Noise vs. Signal Source Resistance (2)
5
VCC = 13.2 V, RL = 4 Ω,
Vin = 0, Booster OFF
2
1
0.5
0.2
0.1
Mute OFF Ch1–Ch4
Mute ON Ch1–Ch4
0.05
0.02
0.01
20
50 100 200 500 1k 2k
5k 10k 20k
50k
Signal Source Resistance Rg (Ω)
14
HA13156
Power Dissipation vs. Output Power
100
50
RL = 4 Ω, f = 1 kHz, 1ch operation
Booster ON (Ch1–Ch4)
VCC = 13.2 V
Booster OFF (Ch1–Ch4)
Booster ON (Ch1–Ch4)
Booster OFF (Ch1–Ch4)
VCC = 16 V
20
10
5
2
1
0.02 0.05 0.1 0.2
0.5
1
2
5
10 20
Output Power Po (W)
Power Dissipation vs. Frequency
Booster ON (Ch1–Ch4)
15
10
5
Booster OFF (Ch1–Ch4)
VCC = 13.2 V, RL = 4 Ω, Po = 10 W, 1ch operation
0
20
50 100 200 500 1k 2k
Frequency f (Hz)
5k 10k 20k
15
HA13156
Gain vs. Frequency
40
35
30
25
20
15
10
5
VCC = 13.2 V, RL = 4 Ω, VOUT = 0 dBm,
Booster ON and OFF
(Ch1–Ch4)
020
50 100 200 500 1k 2k
5k 10k 20k 50k 100k 200k 500k 1M
Frequency f (Hz)
16
HA13156
Package Dimensions
Unit: mm
30.18 ± 0.25
4.50 ± 0.12
φ
3.80 ± 0.05
19.81
+ 0.05
– 0.1
1.55
4.32 ± 0.05
R1.84 ± 0.19
1
28
+ 0.06
– 0.04
0.40
0.5 ± 0.10
1.0 Typ
4.29
5.08
27.0 Typ
Hitachi Code
JEDEC Code
EIAJ Code
Weight
SP-28TA
—
—
—
17
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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