HD74HC573 [HITACHI]
Octal Transparent Latches (with 3-state outputs); 八路透明锁存器(带3态输出)型号: | HD74HC573 |
厂家: | HITACHI SEMICONDUCTOR |
描述: | Octal Transparent Latches (with 3-state outputs) |
文件: | 总12页 (文件大小:73K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HD74HC563/HD74HC573
Octal Transparent Latches (with 3-state outputs)
Description
When the latch enable (LE) input is high, the Q outputs of HD74HC563 will follow the inversion of the D
inputs and the Q outputs of HD74HC573 will follow the D inputs. When the latch enable goes low, data at
the D inputs will be retained at the outputs until latch enable returns high again. When a high logic level is
applied to the output control input, all outputs go to a high impedance state, regardless of what signals are
present at the other inputs and the state of the storage elements.
Features
•
•
•
•
•
High Speed Operation: tpd (Data to Q, Q) = 11 ns typ (CL = 50 pF)
High Output Current: Fanout of 15 LSTTL Loads
Wide Operating Voltage: VCC = 2 to 6 V
Low Input Current: 1 µA max
Low Quiescent Supply Current: ICC (static) = 4 µA max (Ta = 25°C)
Function Table
Outputs
Output Control
Latch Enable
Data
H
HD74HC563
HD74HD573
L
L
L
H
H
H
L
L
H
L
L
H
Q0
Z
X
Q0
Z
X
X
Q0 :
Q0 :
level of Q before the indicated Steady-sate input conditions were established.
complement of Q0 or level of Q before the indicated Steady-state input conditions were established.
HD74HC563/HD74HC573
Pin Arrangement
HD74HC563
Output
Control
1
20 VCC
19 1Q
18 2Q
17 3Q
16 4Q
OE
1D
2
D
Q
Q
Q
Q
OE
2D 3
D
Q
Q
Q
Q
OE
D
3D
4D
5D
4
5
6
OE
D
OE
D
15
5Q
OE
D
6D 7
7D 8
8D 9
14 6Q
13 7Q
12 8Q
OE
D
OE
D
Latch
Enable
10
11
GND
(Top view)
2
HD74HC563/HD74HC573
HD74HC573
Output
Control
1
2
20 VCC
OE
1D
19 1Q
18 2Q
17 3Q
16 4Q
D
Q
Q
Q
Q
OE
2D 3
D
Q
Q
Q
Q
OE
D
3D
4D
5D
4
5
6
OE
D
OE
D
15
5Q
OE
D
6D 7
7D 8
8D 9
14 6Q
13 7Q
12 8Q
OE
D
OE
D
Latch
Enable
10
11
GND
(Top view)
Absolute Maximum Ratings
Item
Symbol
VCC
Rating
–0.5 to +7.0
Unit
V
Supply voltage range
Input voltage
VIN
–0.5 to VCC + 0.5
V
Output voltage
VOUT
IOUT
ICC, IGND
IIK
–0.5 to VCC + 0.5
V
Output current
±35
mA
mA
mA
mA
mW
°C
DC current drain per VCC , GND
DC input diode current
DC output diode current
Power Dissipation per package
Storage temperature
±75
±20
IOK
±20
PT
500
Tstg
–65 to +150
3
HD74HC563/HD74HC573
Block Diagram
HD74HC563
D
C
C
1D
Q
Q
1Q
2Q
3Q
4Q
5Q
6Q
7Q
8Q
D
C
C
2D
3D
D
C
C
Q
Q
Q
Q
Q
Q
D
C
C
4D
5D
D
C
C
D
C
C
6D
7D
8D
D
C
C
D
C
C
LE
OC
4
HD74HC563/HD74HC573
HD74HC573
D
C
C
1D
Q
Q
1Q
2Q
3Q
4Q
5Q
6Q
7Q
8Q
D
C
C
2D
3D
D
C
C
Q
Q
Q
Q
Q
Q
D
C
C
4D
5D
D
C
C
D
C
C
6D
7D
8D
D
C
C
D
C
C
LE
OC
5
HD74HC563/HD74HC573
DC Characteristics
Ta = –40 to
Ta = 25°C
+85°C
Item
Symbol VCC (V) Min Typ Max Min Max Unit Test Conditions
Input voltage
VIH
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
6.0
1.5
—
—
—
—
0.5
1.5
3.15
4.2
—
—
V
V
V
3.15 —
—
4.2
—
—
—
—
—
—
—
—
VIL
0.5
1.35
1.8
—
1.35 —
1.8
—
—
—
—
—
—
Output voltage
VOH
1.9 2.0
4.4 4.5
5.9 6.0
4.18 —
5.68 —
1.9
4.4
5.9
4.13
5.63
—
Vin = VIH or VIL IOH = –20 µA
—
—
—
IOH = –6 mA
IOH = –7.8 mA
—
VOL
—
—
—
—
—
—
0.0 0.1
0.0 0.1
0.0 0.1
0.1
0.1
0.1
0.33
0.33
V
Vin = VIH or VIL IOL = 20 µA
—
—
—
—
—
0.26 —
0.26 —
IOL = 6 mA
IOL = 7.8 mA
Off-state output
current
IOZ
Iin
±0.5 —
±5.0 µA
Vin = VIH or VIL,
Vout = VCC or GND
Input current
6.0
6.0
—
—
—
—
±0.1 —
±1.0 µA
Vin = VCC or GND
Quiescent supply ICC
current
4.0
—
40
µA
Vin = VCC or GND, Iout = 0 µA
6
HD74HC563/HD74HC573
AC Characteristics (CL = 50 pF, Input tr = tf = 6 ns)
Ta = –40 to
+85°C
Ta = 25°C
Symbol VCC (V) Min Typ Max Min Max Unit Test Conditions
Item
Propagation delay tPLH
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
75
15
13
5
—
110 —
140 ns
Data to Q
time
tPHL
11 22
—
—
28
—
—
19
24
tPLH
tPHL
115 —
145 ns
Clock to Q
13 23
—
—
29
—
—
20
25
Output enable
time
tZH
tZL
150 —
190 ns
14 30
—
—
38
—
—
26
33
Output disable
time
tHZ
tLZ
150 —
190 ns
15 30
—
—
90
19
16
5
38
33
—
—
2
26
—
—
—
—
—
—
—
—
—
60
12
10
10
Setup time
Hold time
tsu
—
—
—
—
—
—
—
—
—
75
15
13
10
ns
ns
ns
ns
pF
—
—
–1
—
—
4
th
5
5
5
5
Pulse width
tw
80
16
14
—
—
—
—
100
20
17
—
—
—
—
—
—
4
Output rise/fall
time
tTLH
tTHL
—
5
Input capacitance Cin
7
Unit: mm
24.50
25.40 Max
20
11
10
1
1.30
0.89
7.62
1.27 Max
+ 0.11
– 0.05
0.25
2.54 ± 0.25
0.48 ± 0.10
0° – 15°
Hitachi Code
JEDEC
EIAJ
DP-20N
—
Conforms
Weight (reference value) 1.26 g
Unit: mm
12.6
13 Max
11
10
20
1
+ 0.20
7.80
– 0.30
0.80 Max
1.15
0° – 8°
1.27
0.70 ± 0.20
*0.42 ± 0.08
0.40 ± 0.06
0.15
0.12 M
Hitachi Code
JEDEC
FP-20DA
—
EIAJ
Conforms
*Dimension including the plating thickness
Base material dimension
Weight (reference value) 0.31 g
Unit: mm
12.8
13.2 Max
11
10
20
1
+ 0.25
– 0.40
10.40
0.935 Max
1.45
0° – 8°
+ 0.57
– 0.30
1.27
0.70
*0.42 ± 0.08
0.40 ± 0.06
0.15
M
0.12
Hitachi Code
JEDEC
EIAJ
FP-20DB
Conforms
—
*Dimension including the plating thickness
Base material dimension
Weight (reference value) 0.52 g
Unit: mm
6.50
6.80 Max
20
11
1
10
0.65
1.0
+0.08
*0.22
0.20 ± 0.06
–0.07
0.13
M
6.40 ± 0.20
0.65 Max
0° – 8°
0.50 ± 0.10
0.10
Hitachi Code
TTP-20DA
JEDEC
EIAJ
—
—
*Dimension including the plating thickness
Base material dimension
Weight (reference value) 0.07 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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Japan
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For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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