HL1362A [HITACHI]
Laser Diode, 1310nm;
| 型号： | HL1362A |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Laser Diode, 1310nm 光电 半导体 |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HL1362A/AC
InGaAsP Laser Diodes
Description
The HL1362A/AC are 1.3 µm InGaAsP λ/4 phase-shifted distributed-feedback laser diodes (DFB-LDs).
They are suitable as light sources for high-bit-rate, long-haul fiberoptic communication systems and other
applied optical equipment. The compact packages are suitable for module assembly.
Features
•
•
•
•
•
•
Long wavelength output: 1290 to 1330 nm
High-power output: 12 mW
High quantum efficiency: ηs ≥ 0.2 mW/mA
Fast pulse response: tr and tf ≤ 0.2 ns
Dynamic single longitudinal mode: Sr = 40 dB Typ.
High frequency response: fr = 10 GHz Typ.
Package Type
• HL1362A: A1
• HL1362AC: AC
Internal Circuit
1
2
PO
Pm
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HL1362A/AC
Absolute Maximum Ratings
(TC = 25°C)
Item
Symbol
Value
12
Unit
mW
V
Optical output power
Reverse voltage
Operating temperature
Storage temperature
PO
VR
2
Topr
Tstg
0 to +60
0 to +80
°C
°C
Optical and Electrical Characteristics (TC = 25°C)
Item
Symbol
Ith
Min
—
Typ
25
—
Max
50
—
Unit Test Conditions
mA
Threshold current
Optical output power
PO
12
2
mW Kink free
mW PO = 8 mW
Monitor optical output power Pm
—
—
ηs
Slope efficiency
0.2
—
—
mW/
mA
λp
O
Lasing wavelength
1290
30
1310
40
1330
—
nm
dB
P = 8 mW
Side-mode suppression
ratio
Sr
2.5 Gbps (NRZ)
θ//
θ
O
Beam divergence (parallel)
—
—
—
—
30
—
—
—
—
deg. P = 8 mW,
FWHM
Beam divergence
(perpendicular)
40
deg. P = 8 mW,
O
FWHM
Rise time
tr
0.1
0.15
ns
ns
PO = 3 mW, Ib =
Ith, 10 to 90%
Fall time
tf
PO = 3 mW, Ib =
Ith, 90 to 10%
2
This Material Copyrighted By Its Respective Manufacturer
HL1362A/AC
Typical Characteristic Curves
Optical Output Power vs. Forward Current
12
10
25°C
60°C
TC= 0°C
8
6
4
2
0
20
40
60
80 100 120
Forward current IF (mA)
Forward Current vs. Forward Voltage
100
80
60
40
20
60°C
TC= 0°C
25°C
0
0.5
1.0
1.5
2.0
2.5
Forward voltage VF (V)
3
This Material Copyrighted By Its Respective Manufacturer
HL1362A/AC
Typical Characteristic Curves
(cont)
Lasing Wavelength Temperature Dependence
1314
Po= 8 mW
1312
1310
1308
1306
1304
–20
0
20
40
60
80
Case temperature TC (°C)
Far Field Pattern
Parallel
Perpendicular
TC = 25°C
TC = 25°C
Po = 12 mW
Po = 12 mW
8 mW
5 mW
8 mW
5 mW
–40 –20
0
20
40
–40 –20
0
20
40
Angle (deg.)
Angle (deg.)
4
This Material Copyrighted By Its Respective Manufacturer
HL1362A/AC
Typical Characteristic Curves
(cont)
Bias Dependence of Optical Pulse Response
2.48832Gbps (NRZ)
is = 40mAp-p
PRBS = 215-1
TC = 25°C
Ib/Ith = 1.1
Ib/Ith = 1.0
Ib/Ith = 0.9
Ib/Ith = 0.8
100 ps/div
5
This Material Copyrighted By Its Respective Manufacturer
HL1362A/AC
Bias Dependence of Lasing Spectrum
2.48832Gbps (NRZ)
is = 40mAp-p
PRBS = 215-1
TC = 25°C
10dB/div
Ib/Ith = 1.1
Ib/Ith = 1.0
Ib/Ith = 0.9
Ib/Ith = 0.8
1.3075
1.31
Wavelength, l (mm)
1.3125
6
This Material Copyrighted By Its Respective Manufacturer
HL1362A/AC
Typical Characteristic Curves
(cont)
Optical Output Power Dependence of Lasing Spectrum
TC = 25°C
10dB/div
P
O = 10mW
PO = 5mW
PO = 1mW
IF = Ith
IF = 0.9Ith
1.305
1.31
1.315
Wavelength, l (mm)
7
This Material Copyrighted By Its Respective Manufacturer
HL1362A/AC
Frequency Response of Laser Diode
15
10
i = 2 mAp-p
TC = 25°C
P = 5 mW
o
5
0
–5
–10
–15
1M
10M
100M
1G
10G
Modulation frequency , fM (Hz)
Threshold Current vs. Case Temperature
100
10
1
–20
0
20
40
60
80
Case temperature TC (°C)
8
This Material Copyrighted By Its Respective Manufacturer
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