HL6714G [HITACHI]
AlGaInP Laser Diode; 的AlGaInP激光二极管
| 型号： | HL6714G |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | AlGaInP Laser Diode |
| 文件： | 总7页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HL6714G
AlGaInP Laser Diode
ODE-208-192C (Z)
Rev.3
Jan. 2003
Description
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical
equipment. Hermetic sealing of the package assures high reliability.
Features
•
•
•
•
•
Visible light output at wavelengths up to 680 nm
Single longitudinal mode
Low astigmatism: 10 µm Typ
High output power: 10 mW (CW)
Built-in monitor photodiode
Package Type
Internal Circuit
• HL6714G: G2
1
3
PD
LD
2
HL6714G
Absolute Maximum Ratings
(TC = 25°C)
Item
Symbol
PO
Rated Value
Unit
mW
mW
V
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
10
PO(pulse)
VR(LD)
VR(PD)
Topr
Tstg
12 *
2
30
V
–10 to +50
–40 to +85
°C
°C
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Symbol Min
Typ
—
Max
—
Unit
mW
mA
V
Test Conditions
Optical output power
Threshold current
LD operating voltage
Slope efficiency
PO
Ith
VOP
ηs
θ//
10
20
—
0.3
5
—
35
—
60
—
2.7
0.8
11
PO = 10 mW
0.5
8
mW/mA 6 (mW) / (I(8mW) – I(2mW))
Beam divergence
parallel to the junction
deg.
PO = 10 mW, FWHM
Beam divergence
parpendicular to the junction
θ⊥
18
22
30
deg.
PO = 10 mW, FWHM
Astigmatism
AS
λp
IS
—
10
—
µm
nm
mA
PO = 10 mW, NA = 0.55
PO = 10 mW
Lasing wavelength
Monitor current
660
0.3
670
0.8
680
1.5
PO = 10 mW, VR(PD) = 5 V
Rev.3, Jan. 2003, page 2 of 7
HL6714G
Typical Characteristic Curves
Optical Output Power vs. Forward Current
Monitor Current vs. Optical Output Power
10
8
1.0
0.8
0.6
0.4
0.2
0
TC = 25°C
VR(PD) = 5 V
TC = 0°C
50°C
6
25°C
4
2
0
0
20
40
60
80
100
0
2
4
6
8
10
Forward current, IF (mA)
Optical output power, PO (mW)
Lasing Spectrum
Far Field Pattern
PO = 10 mW
TC = 25°C
PO = 10 mW
Perpendicular
P
O = 5 mW
O = 1 mW
Parallel
20
P
−40
−20
0
40
Angle, θ (deg.)
660
665
670
675
680
Wavelength, λp (nm)
Rev.3, Jan. 2003, page 3 of 7
HL6714G
Typical Characteristic Curves (cont)
Threshold Current vs. Case Temperature
100
Slope Efficiency vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0
50
30
20
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Case temperature, TC (°C)
Case temperature, TC (°C)
Wavelength vs. Case Temperature
PO =10 mW
Monitor Current vs. Case Temperature
1.0
0.8
0.6
0.4
0.2
0
685
680
675
670
665
660
PO =10 mW
VR(PD) = 5 V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Case temperature, TC (°C)
Case temperature, TC (°C)
Rev.3, Jan. 2003, page 4 of 7
HL6714G
Typical Characteristic Curves (cont)
Astigmatism vs. Optical Output Power
Polarization Ratio vs. Optical Output Power
10
500
TC = 25°C
TC = 25°C
NA = 0.55
8
400
300
200
100
0
NA = 0.4
6
4
2
0
NA = 0.25
0
2
4
6
8
10
0
2
4
6
8
10
Optical output power, PO (mW)
Optical output power, PO (mW)
Rev.3, Jan. 2003, page 5 of 7
HL6714G
Package Dimensions
As of July, 2002
Unit: mm
+0
φ
9.0 –0.025
1.0 ± 0.1
(0.65)
+0.3
φ
7.2 –0.2
φ
6.2 ± 0.2
( 2.0)
φ
Emitting Point
φ
3 – 0.45 ± 0.1
1
2
3
3
1
2
φ
2.54 ± 0.35
OPJ Code
JEDEC
LD/G2
—
JEITA
—
Mass (reference value)
1.1 g
Rev.3, Jan. 2003, page 6 of 7
HL6714G
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s
patent, copyright, trademark, or other intellectual property rights for information contained in this
document. OPJ bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However,
contact our sales office before using the product in an application that demands especially high quality
and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions
and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage
due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The
laser beam shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very
low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or
performing chemical experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste
such as industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook
issued by OPJ unless otherwise specified.
Sales Offices
Opto Device Business Unit Opnext Japan, Inc.
190 Kashiwagi, Komoro-shi, Nagano 384-8511, Japan
Tel: (0267) 22-4111
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese)
http://japan.opnext.com/optodevice/
Other area (English)
http://www.opnext.com/optodevice/
Copyright © Opnext Japan, Inc., 2003. All rights reserved. Printed in Japan.
Colophon 0.0
Rev.3, Jan. 2003, page 7 of 7
相关型号：
HL6724MG
The HL6724MG is a 0.67 ?m band AlGaInP laser diode with a multi-quantum well (MQW) structure.
HITACHI
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