HRF503A [HITACHI]
Silicon Schottky Barrier Diode for Rectifying; 硅肖特基二极管整流
| 型号： | HRF503A |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Schottky Barrier Diode for Rectifying |
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HRF503A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-401B(Z)
Rev 2
Features
•
•
Low forward voltage drop and suitable for high effifiency rectifying.
DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRF503A
503A
DO-214
Outline
Cathode mark
Mark
503A
1
2
1. Cathode
2. Anode
HRF503A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
*1
VRRM
Repetitive peak reverse
voltage
35
V
*1
Average rectified current Io
5
A
A
*2
Non-Repetitive peak
forward surge current
IFSM
100
Junction temperature
Storage temperature
Tj
Tstg
125
°C
°C
–40 to +125
Notes: 1. See from Fig.4 to Fig.7
2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Forward voltage
VF1
VF2
IR
—
—
—
—
—
0.38
—
—
V
IF = 3A
0.45
1.0
—
IF = 5A
Reverse current
—
mA
VR = 35V
*1
Thermal resistance Rth(j-a)
Rth(j-c)
75
°C/W Glass epoxy board
Tc = 25°C
35
—
Note: 1. Glass epoxy board
Land size
3.5
6.8
2.0
Unit: mm
2
HRF503A
Main Characteristic
102
10-2
10-3
10-4
Pulse test
Pulse test
Ta=75°C
10
Ta=75°C
Ta=25°C
1.0
Ta=25°C
10-1
10-5
10-6
10-2
10-3
0
0.1
0.2 0.3
0.5 0.6
0.4
20
40
10
30
50
0
Reverse voltage V R(V)
Forward voltage VF (V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
103
f=1MHz
Pulse test
102
10
10
Reverse voltage V R(V)
40
1.0
Fig.3 Capacitance Vs. Reverse voltage
3
HRF503A
Main Characteristic
12
5
D=5/6
D=2/3
0V
0A
t
D=1/6
D=1/3
t
T
t
t
T
D= ―
10
8
D= ―
4
T
T
Tj =25°C
Tj =125°C
Sin
3
2
D=1/2
Sin
D=1/2
DC
6
4
1
0
2
0
0
2
3
6
1
4
5
0
10
Reverse voltage V R(V)
Fig.5 Reverse power dissipation Vs. Reverse voltage
40
20
30
Forward current I (A)
F
Fig.4 Forward p ower dissipation Vs. Forward current
6
6
V
=15V
R
V
=15V
R
Tj =125°C
Tj =125°C
Glass epoxy PCB
5
5
DC
DC
4
3
2
1
0
4
3
2
1
0
D=1/3
D=1/6
Sin
D=1/2
D=1/3
D=1/2
Sin
D=1/6
0
25
Case temperature Tc (°C)
Fig.6 Average forward current Vs. Case temperature
50
75
125
0
25
Ambient temperature Ta (°C)
Fig.7 Average forward current Vs. Ambient temperature
50
75
125
-25
100
-25
100
4
HRF503A
Package Dimensions
Unit : mm
Cathode Mark
503A
1
2
7.0 ± 0.2
8.0 ± 0.3
1
2
Cathode
Anode
Hitachi Code
JEDEC Code
EIAJ Code
DO-214
DO-214
—
1.2 ± 0.3
Weight (g)
0.16
5
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