HRW1002A(S) [HITACHI]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 20V V(RRM), Silicon;
| 型号： | HRW1002A(S) |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 20V V(RRM), Silicon 功效 二极管 |
| 文件： | 总6页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HRW1002A(S)
Silicon Schottky Barrier Diode for Rectifying
ADE-208-207B(Z)
Rev 2
Oct. 1997
Features
•
•
•
•
Low forward voltage drop and suitable for high efficiency rectifying.
Same power as TO-220AB.
Small outline compared with TO-220AB.
LDPAK(S) package is suitable for high density surface mounting.
Ordering Information
Type No.
Laser Mark
Package Code
HRW1002A(S)
W1002A
LDPAK(S)
Outline
2
3
1
1
2
3
Anode
Cathode
Anode
HRW1002A(S)
Absolute Maximum Ratings (Ta = 25°C) *1
Item
Symbol
Value
Unit
*2
VRRM
Repetitive peak reverse
voltage
20
V
Average forward current IO*2 , *3
10
75
A
A
*4
Non-Repetitive peak
forward surge current
IFSM
Junction temperature
Storage temperature
Tj
125
°C
°C
Tstg
-40 to +125
Notes: 1. Per one device
Notes: 2. See from Fig. 4 to Fig. 7
Notes: 3. Square wave, Duty (1/2), Sum of two devices
Notes: 4. 10m sec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C) *1
Item
Symbol Min
Typ Max Unit Test Condition
Forward voltage
Reverse current
ESD-capability
VF
IR
—
—
—
—
0.42
1.0
—
V
IF = 5.0A
VR = 20V
C = 200pF
—
mA
V
—
500
Both forward and reverse direction 1 pulse
Thermal resistance Rth (j-c)
Notes 1. Per one device
—
1.5
—
°C/W
2
HRW1002A(S)
Main Characteristic
10 2
10–2
10–3
10–4
Pulse test
Ta = 75°C
Pulse test
Ta = 75°C
10
Ta = 25°C
1.0
Ta = 25°C
10–1
10–5
10–2
10–3
10–6
0
0.1
0.2 0.3
0.5 0.6
0
0.4
20
Reverse voltage V R(V)
5
10
15
25
Forward voltage VF (V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
103
f = 1MHz
Pulse test
102
10
10
Reverse voltage V R(V)
40
1.0
Fig.3 Capacitance Vs. Reverse voltage
3
HRW1002A(S)
Main Characteristic
5
4
4.0
0V
0A
Tj =25°C
t
t
T
t
D=1/6
D=5/6
D=2/3
D=
\
T
t
T
T
D=
\
3.0
2.0
Sin
D=1/3
D=1/2
Tj =125°C
3
2
DC
D=1/2
Sin
1.0
0
1
0
0
10
Reverse voltage @ @V @(V)
25
0
2
Forward current @ @I @(A)
5
5
15
20
1
3
4
F
R
Fig4. Forward power dissipation Vs. Forward current
Fig5. Reverse power dissipation Vs. Reverse voltage
12
6
10
5
DC
DC
I@o
@Io
Sin
Sin
8
4
D=1/2
D=1/3
D=1/6
D=1/2
D=1/3
D=1/6
6
4
3
2
V
=V
V
=V
R
RRM
R
RRM
2
0
1
0
Tj =125°C
Rth(j-c)=1.5°C/W
Two device total
Tj =125°C
Rth(j-c)=1.5°C/W
Per one device
0
50
125
75 100
0
50
125
75 100
-25
-25
25
25
Case temperature Tc ( °C)
Case temperature Tc ( °C)
Fig.7 Average rectified current Vs. case temperature
Fig.6 Average rectified current Vs. case temperature
4
HRW1002A(S)
Package Dimensions/ Unit : mm
4.44 ± 0.2
10.2 ± 0.3
1.3 ± 0.2
W1002A
+ 0.2
– 0.1
0.1
2.59 ± 0.2
0.4 ± 0.1
1
3
1.27 ± 0.2
2
1 Anode
2 Cathode
3 Anode
Lot No.
+ 0.2
– 0.1
1.2 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
HITACHI Code
JEDEC Code
LDPAK(S)
—
EIAJ Code
Weight (g)
—
1.3
5
HRW1002A(S)
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other reasons during operation of the user’s unit according to this document.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
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Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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U S A
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Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.
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