HSS104 [HITACHI]
Silicon Epitaxial Planar Diode for High Speed Switching; 硅外延平面二极管，高速开关
| 型号： | HSS104 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Epitaxial Planar Diode for High Speed Switching |
| 文件： | 总6页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HSS104
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-178A (Z)
Rev. 1
Aug. 1995
Features
•
•
•
Short reverse recovery time and forward recovery time.
Suitable for 5mm pitch high speed automatical insertion.
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Blue
Package Code
HSS104
MHD
Outline
2
1
Cathode band
1. Cathode
2. Anode
HSS104
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
40
Unit
V
Peak reverse voltage
Reverse voltage
VRM
VR
IFM
IFSM
IO
35
V
Peak forward current
Non-Repetitive peak forward surge current
Average forward current
Power dissipation
300
mA
A
*
0.4
110
mA
mW
°C
°C
Pd
Tj
300
Junction temperature
Storage temperature
175
Tstg
–65 to +175
Note: Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
—
Max
Unit
V
Test Condition
IF = 10mA
Forward voltage
Reverse current
Capacitance
VF
IR
—
—
—
—
1.2
0.5
3.0
3.0
—
µA
pF
ns
VR = 35V
C
—
VR = 0.5V, f = 1MHz
Reverse recovery time trr
—
IF = 10mA, VR = 6V, RL = 50Ω
2
HSS104
10–1
10–2
10–3
10–4
0.6
Forward voltage VF (V)
0
0.2
0.4
0.8
1.0
Fig.1 Forward current Vs. Forward voltage
10–6
10–7
10–8
10–9
–10
10
30
Reverse voltage VR (V)
0
10
20
40
50
Fig.2 Reverse current Vs. Reverse voltage
3
HSS104
f = 1MHz
10
1.0
10–1
102
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
4
HSS104
Package Dimensions
Unit: mm
26.0 Min
26.0 Min
2.4 Max
1 Cathode
1
2
2 Anode
Cathode band (Blue)
HITACHI Code
JEDEC Code
EIAJ Code
MHD
DO-34
—
Weight (g)
0.084
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
相关型号：
©2020 ICPDF网 联系我们和版权申明