HVC135 [HITACHI]
Silicon Epitaxial Trench Pin Diode for Antenna Switching; 硅外延海沟PIN二极管的天线切换
| 型号： | HVC135 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Epitaxial Trench Pin Diode for Antenna Switching |
| 文件： | 总6页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVC135
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-818A (Z)
Rev 1
Feb. 2000
Features
•
•
•
•
Adopting the trench structure improves low capacitance.(C=0.6pF max)
Low forward resistance. (rf=2.0Ω max)
Low operation current.
Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high
frequency.
Ordering Information
Type No.
Laser Mark
Package Code
HVC135
P5
UFP
Outline
Cathode mark
Mark
1
2
P5
1. Cathode
2. Anode
HVC135
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VRM
VR
Value
65
Unit
V
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
60
V
IF
100
mA
mW
°C
Pd
150
Tj
125
Tstg
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Reverse current
Forward voltage
Capacitance
IR
—
—
—
—
—
—
0.1
0.9
0.6
2.0
—
µA
V
VR = 60V
VF
C
—
IF = 2 mA
—
pF
Ω
VR = 1V, f = 1 MHz
Forward resistance rf
ESD-Capability*1
—
IF = 2mA, f = 100 MHz
—
100
V
C = 200pF , Both forward and reverse
direction 1 pulse.
Notes 1. Failure criterion ; IR > 100nA at VR =60 V
2
HVC135
Main Characteristic
10-2
10-4
10-6
10-8
10-8
10-9
10-10
10-11
Ta= 75°C
Ta= 50°C
Ta= 25°C
Ta= 25°C
10-12
Ta= 50°C
Ta= 75°C
10-10
-13
10
-12
10-14
10
0.6
0.8
0
0.2
0.4
1.0
0
40
60
80
100
20
Forward voltage VF (V)
Reverse voltage V R(V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
f=1MHz
f=100MHz
101
10
100
1.0
0.1
10-1
-2
10
-4
10-5
10
10-3
1.0
10
0.1
Forward current I F (A)
Reverse voltage V R(V)
Fig.4 Forward resistance Vs. Forward current
Fig.3 Capacitance Vs. Reverse voltage
3
HVC135
Main Characteristic
106
105
104
f=100MHz
103
102
101
100
10-1
0
0.4
0.2
0.6
0.8
Forward voltage VF (V)
Fig.5 Forward resistance (parallel) Vs. Forward voltage
4
HVC135
Package Dimensions
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
Hitachi Code
JEDEC
UFP
—
EIAJ
Conforms
Weight (reference value) 0.0016 g
5
HVC135
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Japan
: http://www.hitachi.co.jp/Sicd/index.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
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Tel: 535-2100
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Tun-Hwa North Road, Taipei (105)
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Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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