HVC358BKRU [HITACHI]
Variable Capacitance Diode, 15V, Silicon;
| 型号： | HVC358BKRU |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Variable Capacitance Diode, 15V, Silicon 二极管 变容二极管 光电二极管 |
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVC358B
Variable Capacitance Diode for VCO
ADE-208-418(Z)
Rev 0
July 1996
Features
•
•
•
•
High capacitance ratio. (n =2.20.min)
Low series resistance. (rs=0.4 max)
Good C-V linearity.
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
UFP
HVC358B
B2
Outline
Cathode mark
Mark
1
2
B2
1. Cathode
2. Anode
HVC358B
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VR
Value
15
Unit
V
Reverse voltage
Junction temperature
Storage temperature
Tj
125
°C
°C
Tstg
-55 to +125
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Reverse current
IR1
IR2
C1
C4
n
—
—
—
—
—
—
—
10
nA
VR = 15V
—
100
VR = 15V, Ta =60°C
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1 / C4
Capacitance
19.5
8.00
2.20
—
21.0 pF
9.30
Capacitance ratio
Series resistance
—
—
rs
0.4
Ω
VR = 1V, f = 470 MHz
2
HVC358B
Main Characteristic
10-6
10-7
30
25
f=1MHz
10-8
10-9
20
15
-10
10
10
5
-11
10
-12
10
-13
0
10
10
-1
1.0
Reverse voltage V
10
0
4
8
12
16
(V)
20
Reverse voltage V
(V)
R
R
Fig.2 Capacitance Vs. Reverse voltage
Fig.1 Reverse current Vs. Reverse voltage
0
0.4
f=470MHz
0.3
0.2
-0.5
-1.0
-1.5
0.1
0
-1
10-1
1.0
1.0
10
10
10
Reverse voltage V
(V)
Reverse voltage V
(V)
R
R
Fig.3 Series resistance Vs. Reverse voltage
Fig.4
L
Vs. Reverse voltage
F
3
HVC358B
Package Dimensions
Unit : mm
Cathode Mark
1
2
B2
1.2 ± 0.10
1.6 ± 0.10
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
UFP
—
SC-79
0.0016
Weight(g)
4
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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