HVU187 [HITACHI]
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator; 硅外延平面PIN二极管的高频衰减器
| 型号： | HVU187 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator |
| 文件： | 总5页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HVU187
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
ADE-208-054D(Z)
Rev 4
Nov. 1998
Features
•
•
Low forward resistance. (rf=5.5Ω max)
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVU187
D
URP
Outline
Cathode mark
Mark
1
2
1. Cathode
2. Anode
HVU187
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
60
Unit
V
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
VR
IF
50
mA
mW
°C
Pd
100
Tj
125
Tstg
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ Max Unit Test Condition
Reverse current
Forward voltage
Capacitance
IR
—
—
—
—
—
—
100
1.0
2.4
5.5
—
nA
V
VR = 60V
VF
C
—
IF = 10 mA
—
pF
Ω
VR = 0V, f = 1 MHz
Forward resistance rf
ESD-Capability*1
3.5
200
IF = 10 mA, f = 100 MHz
—
V
C=200pF , Both forward and reverse direction
1 pulse.
Notes 1. Failure criterion ; IR ≥ 100nA at VR = 60V
2
HVU187
Main Characteristic
10-3
10-5
10-7
10-9
10-6
10-7
10-8
10-9
10-10
10-11
10-11
10-12
10-13
-13
10
0
40
60
80
100
0.6
0.8
20
0
0.2
0.4
1.0
Reverse voltage VR (V)
Forward voltage VF (V)
Fig.2 Reverse current Vs. Reverse voltage
104
Fig.1 Forward current Vs. Forward voltage
f=1MHz
f=100MHz
103
102
10
1.0
10
-1
10
1.0
10
102
-2
10
-4
10-5
10
Forward current I F (A)
10-3
1.0
Reverse voltage VR (V)
Fig.4 Forward resistance Vs. Forward current
Fig.3 Capacitance Vs. Reverse voltage
3
HVU187
Package Dimensions
Unit : mm
Cathode Mark
2
1.7±0.15
1
2.5±0.15
1. Cathode
2. Anode
Hitachi Code
JEDECCode
EIAJCode
URP
—
—
Weight(g)
0.004
4
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
Asia (Taiwan)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
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Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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San Jose,CA 95134
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Fax: <1>(408) 433-0223
Fax: 535-1533
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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