HZ3A2TA [HITACHI]

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型号：	HZ3A2TA
厂家：	HITACHI SEMICONDUCTOR
描述：	暂无描述二极管齐纳二极管
文件：	总8页 (文件大小：39K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HZ Series

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

ADE-208-117B(Z)

Rev. 2

Nov. 1999

Features

•

Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for

stabilized power supply, etc.

Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Ordering Information

Type No.

Mark

Package Code

HZ Series

Type No.

DO-35

Outline

B 2

Type No.

Cathode band

1. Cathode

2. Anode

HZ Series

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

500

Unit

°C

Power dissipation

Junction temperature

Storage temperature

175

Tstg

-55 to +175

°C

Electrical Characteristics

(Ta = 25°C)

Zener Voltage

Reverese Current

Test

Dynamic Resistance

Test

Condition

Test

Condition

V_Z(V)*¹

I_R(µA)

Max

Condition r_d(Ω)

Type

Grade

Min

1.6

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

Max

I_Z(mA)

V_R(V)

Max

I_Z(mA)

HZ2

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

0.5

100

0.5

100

HZ3

0.5

100

HZ4

1.0

100

Note: 1. Tested with DC.

Rev.2, Nov. 1999, page 2 of 8

HZ Series

Zener Voltage

Reverese Current

Dynamic Resistance

Test

Condition

Test

V_Z(V)*¹

I_R(µA)

Condition r_d(Ω)

Condition

I_Z(mA)

Type

Grade

Min

3.7

3.8

3.9

4.0

4.1

4.2

4.3

4.4

4.5

4.6

4.7

4.8

4.9

5.0

5.1

5.2

5.3

5.4

5.5

5.6

5.7

5.8

6.0

6.1

6.3

6.4

6.6

6.7

6.9

7.0

Max

I_Z(mA)

Max

V_R(V)

Max

HZ4

3.9

4.0

4.1

4.2

4.3

4.4

4.5

4.6

4.7

4.8

4.9

5.0

5.1

5.2

5.3

5.5

5.6

5.7

5.8

5.9

6.0

6.1

6.3

6.4

6.6

6.7

6.9

7.0

7.2

7.3

1.0

100

HZ5

HZ6

HZ7

1.5

2.0

3.5

100

Note: 1. Tested with DC.

Rev.2, Nov. 1999, page 3 of 8

HZ Series

Zener Voltage

Reverese Current

Test

Dynamic Resistance

Test

Condition

Test

Condition

V_Z(V)*¹

I_R(µA)

Max

Condition r_d(Ω)

Type

Grade

Min

7.2

Max

I_Z(mA)

V_R(V)

Max

I_Z(mA)

HZ7

7.6

3.5

7.3

7.7

7.5

7.9

HZ9

7.7

8.1

5.0

7.5

9.5

7.9

8.3

8.1

8.5

8.3

8.7

8.5

8.9

8.7

9.1

8.9

9.3

9.1

9.5

9.3

9.7

HZ11

9.5

9.9

9.7

10.1

10.3

10.6

10.8

11.1

11.3

11.6

11.9

12.1

12.4

12.7

12.9

13.1

13.4

13.7

14.0

14.3

9.9

10.2

10.4

10.7

10.9

11.1

11.4

11.6

11.9

12.2

12.4

12.6

12.9

13.2

13.5

13.8

HZ12

Note: 1. Tested with DC.

Rev.2, Nov. 1999, page 4 of 8

HZ Series

Zener Voltage

Reverese Current

Dynamic Resistance

Test

Condition

Test

V_Z(V)*¹

I_R(µA)

Condition r_d(Ω)

Condition

I_Z(mA)

Type

Grade

Min

Max

I_Z(mA)

Max

V_R(V)

Max

HZ15

14.1

14.5

14.9

15.3

15.7

16.3

16.9

17.5

18.1

18.8

19.5

20.2

20.9

21.6

22.3

22.9

23.6

24.3

25.2

26.2

27.2

28.2

29.2

30.2

31.2

32.2

33.2

34.2

35.3

36.4

14.7

15.1

15.5

15.9

16.5

17.1

17.7

18.3

19.0

19.7

20.4

21.1

21.9

22.6

23.3

24.0

24.7

25.5

26.6

27.6

28.6

29.6

30.6

31.6

32.6

33.6

34.6

35.7

36.8

38.0

11.0

HZ16

HZ18

HZ20

HZ22

HZ24

HZ27

HZ30

HZ33

HZ36

12.0

13.0

15.0

17.0

19.0

21.0

23.0

25.0

27.0

100

120

140

Note: 1. Tested with DC.

Note: 2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.

Rev.2, Nov. 1999, page 5 of 8

HZ Series

Main Characteristic

10^-2

10^-3

10^-4

10^-5

10^-6

10^-7

10^-8

Zener Voltage V _Z(V)

Fig.1 Zener current Vs. Zener voltage

500

400

0.10

5mm

%/°C

2.5 mm

3 mm

0.08

0.06

0.04

0.02

Printed circuit board

100 180 1.6t mm

Quality: paper phenol

mV/°C

300

200

-10

-20

-30

-0.02

-0.04

-0.06

100

-40

-50

-0.08

-0.10

15 20 25 30

35 40

Ambient Temperature Ta (°C)

200

100

150

Zener Voltage V (V)

Fig.2 Temperature Coefficient Vs. Zener voltage

Fig.3 Power Dissipation Vs. Ambient Temperature

Rev.2, Nov. 1999, page 6 of 8

HZ Series

Package Dimensions

Unit: mm

26.0 Min

4.2 Max

Hitachi Code

DO-35

JEDEC

EIAJ

Mass

Conforms

0.13 g

Rev.2, Nov. 1999, page 7 of 8

HZ Series

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

Asia

: http://semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

: http://sicapac.hitachi-asia.com

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive Whitebrook Park

Hitachi Europe Ltd.

Electronic Components Group

Hitachi Asia Ltd.

Hitachi Tower

16 Collyer Quay #20-00

Singapore 049318

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower

San Jose,CA 95134

Lower Cookham Road

World Finance Centre,

Tel: <1> (408) 433-1990 Maidenhead

Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Tel : <65>-538-6533/538-8577

Fax : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

Harbour City, Canton Road

Tsim Sha Tsui, Kowloon

Hong Kong

Tel : <852>-(2)-735-9218

Fax : <852>-(2)-730-0281

URL : http://semiconductor.hitachi.com.hk

Fax: <44> (1628) 585200

Hitachi Asia Ltd.

(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road

Hung-Kuo Building

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Taipei (105), Taiwan

Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Colophon 4.0

Rev.2, Nov. 1999, page 8 of 8

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