HZM43FA [HITACHI]

Silicon Epitaxial Planar Zener Diode for Surge Absorb; 硅外延平面齐纳二极管的浪涌吸收
HZM43FA
型号: HZM43FA
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Silicon Epitaxial Planar Zener Diode for Surge Absorb
硅外延平面齐纳二极管的浪涌吸收

二极管 齐纳二极管
文件: 总6页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HZM4.3FA  
Silicon Epitaxial Planar Zener Diode for Surge Absorb  
ADE-208-468(Z)  
Rev 0  
Features  
HZM4.3FA has four devices, and can absorb external + and -surge.  
MPAK-5 Package is suitable for high density surface mounting and high speed assembly.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
HZM4.3FA  
43A  
MPAK-5  
Outline  
2
1
5
1 Cathode  
2 Cathode  
3 Cathode  
4 Anode  
4
3
5 Cathode  
(Top View)  
HZM4.3FA  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
200  
Unit  
mW  
°C  
*1  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
150  
Tstg  
–55 to +150  
°C  
Note: 1. Four device total, With P.C board.  
Electrical Characteristics (Ta = 25°C) *2  
Item  
Symbol Min  
Typ Max Unit Test Condition  
Zener voltage  
Reverse current  
Capacitance  
VZ  
IR  
4.01  
4.48  
10  
V
IZ = 5 mA, 40ms pulse  
µA  
pF  
VR = 1V  
C
150  
130  
VR = 0V, f = 1 MHz  
IZ = 5 mA  
Dynamic resistance r d  
*1  
ESD-Capability  
30  
kV  
C =150pF, R = 330 , Both forward and  
reverse direction 10 pulse  
Notes: 1. Failure criterion ; IR 10 µA at VR = 1V.  
2. Per one device.  
2
HZM4.3FA  
Main Characteristic  
10  
1.0  
10-1  
10-2  
10-3  
10-4  
10-5  
10-6  
10-7  
6
3
4
5
8
0
1
2
7
Zener Voltage Vz (V)  
Fig.1 Zener current Vs. Zener voltage  
250  
200  
1.0mm  
Cu Foil  
Printed circuit board  
×
×
25 62 1.6t mm  
Material:  
150  
100  
Glass Epoxy Resin+Cu Foil  
50  
0
50  
Ambient Temperature Ta ( C)  
200  
100  
150  
0
°
Fig.2 Power Dissipation Vs. Ambient Temperature  
3
HZM4.3FA  
Main Characteristic  
4
10  
PRSM  
Ta = 25°C  
nonrepetitive  
t
103  
102  
10  
1.0  
-4  
-3  
-2  
-1  
10-5  
10  
10  
Time t (s)  
10  
10  
1.0  
Fig.3 Surge Reverse Power Ratings  
4
10  
103  
102  
10  
20hx15wx0.8t  
0.4  
1.5  
1.75  
1.0  
unit: mm  
103  
102  
1.0  
-1  
10-2  
10  
1.0  
10  
Time t (s)  
Fig.4 Transient Thermal Impedance  
4
HZM4.3FA  
Package Dimensions  
Unit : mm  
(0.95)  
2
(0.95)  
1
0.4±0.1  
0.4±0.1  
Laser Mark  
0.16  
0 to 0.15  
43A  
1 Cathode  
5
4
3
2 Cathode  
3 Cathode  
4 Anode  
0.4±0.1  
0.4±0.1  
1.9  
2.9±0.2  
5 Cathode  
Hitachi Code  
JEDEC Code  
EIAJ Code  
MPAK-5  
Weight (g)  
0.013  
5
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

相关型号:

HZM5.1N

Silicon Epitaxial Planar Zener Diode for Stabilizer
HITACHI

HZM5.1N

Silicon Epitaxial Planar Zener Diode for Stabilizer
RENESAS

HZM5.1NB

Silicon Epitaxial Planar Zener Diode for Stabilizer
RENESAS

HZM5.1NB

Zener Diode, 5.105V V(Z), 5.191%, 0.2W, Silicon, Unidirectional
HITACHI

HZM5.1NB1

Silicon Epitaxial Planar Zener Diode for Stabilizer
RENESAS

HZM5.1NB1-E

5.1V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3
RENESAS

HZM5.1NB1TL

暂无描述
RENESAS

HZM5.1NB1TL-E

HZM5.1NB1TL-E
RENESAS

HZM5.1NB1TR

4.94V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3
RENESAS

HZM5.1NB1TR-E

暂无描述
RENESAS

HZM5.1NB2

Silicon Epitaxial Planar Zener Diode for Stabilizer
RENESAS

HZM5.1NB2TL

5.09V, 0.2W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, MPAK-3
RENESAS