HZM43FA [HITACHI]
Silicon Epitaxial Planar Zener Diode for Surge Absorb; 硅外延平面齐纳二极管的浪涌吸收
| 型号： | HZM43FA |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon Epitaxial Planar Zener Diode for Surge Absorb |
| 文件： | 总6页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HZM4.3FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-468(Z)
Rev 0
Features
•
•
HZM4.3FA has four devices, and can absorb external + and -surge.
MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HZM4.3FA
43A
MPAK-5
Outline
2
1
5
1 Cathode
2 Cathode
3 Cathode
4 Anode
4
3
5 Cathode
(Top View)
HZM4.3FA
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
200
Unit
mW
°C
*1
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
150
Tstg
–55 to +150
°C
Note: 1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) *2
Item
Symbol Min
Typ Max Unit Test Condition
Zener voltage
Reverse current
Capacitance
VZ
IR
4.01
—
—
—
—
—
—
4.48
10
V
IZ = 5 mA, 40ms pulse
µA
pF
Ω
VR = 1V
C
—
150
130
—
VR = 0V, f = 1 MHz
IZ = 5 mA
Dynamic resistance r d
—
*1
ESD-Capability
—
30
kV
C =150pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Notes: 1. Failure criterion ; IR ≥ 10 µA at VR = 1V.
2. Per one device.
2
HZM4.3FA
Main Characteristic
10
1.0
10-1
10-2
10-3
10-4
10-5
10-6
10-7
6
3
4
5
8
0
1
2
7
Zener Voltage Vz (V)
Fig.1 Zener current Vs. Zener voltage
250
200
1.0mm
Cu Foil
Printed circuit board
×
×
25 62 1.6t mm
Material:
150
100
Glass Epoxy Resin+Cu Foil
50
0
50
Ambient Temperature Ta ( C)
200
100
150
0
°
Fig.2 Power Dissipation Vs. Ambient Temperature
3
HZM4.3FA
Main Characteristic
4
10
PRSM
Ta = 25°C
nonrepetitive
t
103
102
10
1.0
-4
-3
-2
-1
10-5
10
10
Time t (s)
10
10
1.0
Fig.3 Surge Reverse Power Ratings
4
10
103
102
10
20hx15wx0.8t
0.4
1.5
1.75
1.0
unit: mm
103
102
1.0
-1
10-2
10
1.0
10
Time t (s)
Fig.4 Transient Thermal Impedance
4
HZM4.3FA
Package Dimensions
Unit : mm
(0.95)
2
(0.95)
1
0.4±0.1
0.4±0.1
Laser Mark
0.16
0 to 0.15
43A
1 Cathode
5
4
3
2 Cathode
3 Cathode
4 Anode
0.4±0.1
0.4±0.1
1.9
2.9±0.2
5 Cathode
Hitachi Code
JEDEC Code
EIAJ Code
MPAK-5
—
—
Weight (g)
0.013
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
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Fax: <852> (2) 730 0281
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Tel: 535-2100
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Tel: <44> (1628) 585000
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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