HZS8.2NB1 [HITACHI]
Zener Diode, 7.73V V(Z), 2.2%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN;
| 型号： | HZS8.2NB1 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Zener Diode, 7.73V V(Z), 2.2%, 0.4W, Silicon, Unidirectional, DO-34, MHD, 2 PIN 测试 二极管 |
| 文件： | 总7页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HZS-N Series
Silicon Epitaxial Planar Zener Diodes for Stabilized Power
Supply
ADE-208-124 (Z)
Rev. 0
Features
•
Low leakage, low zener impedance and maximum power dissipation of 400mW are ideally suitedfor
stabilized power supply, etc.
•
•
Wide spectrum from 1.88V through 38.52V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-N Series
Type No.
MHD
Outline
B
2
2
1
Type No.
Cathode band
1. Cathode
2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
mW
°C
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
400
200
Tstg
–55 to +175
°C
HZS-N Series
Electrical Characteristics (Ta = 25°C)
Zener Voltage
Test
Reverse Current
Dynamic Resistance
Test
Test
VZ (V)*
Condition
IR (µA) Condition
rd (Ω)
Max
100
Condition
IZ (mA)
5
Type
Grade Min
Max
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.68
3.83
3.98
4.14
4.26
4.40
4.53
4.65
4.77
4.91
5.03
5.18
5.35
5.52
5.70
5.88
6.06
6.24
6.40
IZ (mA)
Max
VR (V)
HZS2.0N
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.47
3.62
3.77
3.92
4.05
4.20
4.34
4.47
4.59
4.71
4.85
4.97
5.12
5.29
5.46
5.64
5.81
5.99
6.16
5
120
0.5
HZS2.2N
HZS2.4N
HZS2.7N
HZS3.0N
HZS3.3N
HZS3.6N
HZS3.9N
HZS4.3N
5
5
5
5
5
5
5
5
120
120
100
50
20
10
5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
100
100
110
120
120
120
120
120
5
5
5
5
5
5
5
5
5
HZS4.7N
HZS5.1N
HZS5.6N
HZS6.2N
5
5
5
5
5
5
5
5
1.0
1.5
2.5
3.0
100
70
5
5
5
5
40
30
Note: Tested with pulse (PW = 40ms)
HZS-N Series
Electrical Characteristics (Ta = 25°C) (cont)
Zener Voltage
Test
Reverse Current
Dynamic Resistance
Test
Test
VZ (V)*
Condition
IZ (mA)
5
IR (µA) Condition
rd (Ω)
Max
25
Condition
IZ (mA)
5
Type
Grade Min
Max
Max
VR (V)
HZS6.8N
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
6.32
6.59
2
3.5
6.52
6.79
6.70
6.97
HZS7.5N
HZS8.2N
HZS9.1N
HZS10N
HZS11N
HZS12N
HZS13N
HZS15N
HZS16N
6.88
7.19
5
5
5
5
5
5
5
5
5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
0.2
0.2
4.0
5.0
6.0
7.0
8.0
9.0
10
25
20
20
20
20
25
25
25
25
5
5
5
5
5
5
5
5
5
7.11
7.41
7.33
7.64
7.56
7.90
7.82
8.15
8.07
8.41
8.33
8.70
8.61
8.99
8.89
9.29
9.19
9.59
9.48
9.90
9.82
10.30
10.63
10.95
11.26
11.63
11.92
12.30
12.71
13.16
13.62
14.09
14.56
15.02
15.50
15.96
16.50
10.18
10.50
10.82
11.13
11.50
11.80
12.18
12.59
13.03
13.48
13.95
14.42
14.87
15.33
15.79
11
12
Note: Tested with pulse (PW = 40ms)
HZS-N Series
Electrical Characteristics (Ta = 25°C) (cont)
Zener Voltage
Test
Reverse Current
Dynamic Resistance
Test
Test
VZ (V)*
Condition
IZ (mA)
5
IR (µA) Condition
rd (Ω)
Max
30
Condition
IZ (mA)
5
Type
Grade Min
Max
Max
VR (V)
HZS18N
B1
B2
B3
B1
B2
B3
B1
B2
B3
B4
B1
B2
B3
B4
B1
B2
B3
B4
B1
B2
B3
B4
B1
B2
B3
B4
B1
B2
B3
B4
16.34
16.90
17.51
18.14
18.80
19.52
20.23
20.76
21.22
21.68
22.26
22.75
23.29
23.81
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
17.06
17.67
18.30
18.96
19.68
20.45
21.08
21.65
22.09
22.61
23.12
23.73
24.27
24.81
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
0.2
13
HZS20N
HZS22N
5
5
0.2
0.2
15
17
30
30
5
5
HZS24N
HZS27N
HZS30N
HZS33N
HZS36N
5
5
5
5
5
0.2
0.2
0.2
0.2
0.2
19
21
23
25
27
35
45
55
65
75
5
5
5
5
5
Note: Tested with pulse (PW = 40ms)
HZS-N Series
Electrical Characteristics (Ta = 25°C) (cont)
Zener Voltage
Test
Reverse Current
Dynamic Resistance
Test
Test
VZ (V)*
Condition
IZ (mA)
5
IR (µA) Condition
rd (Ω)
Max
85
Condition
IZ (mA)
5
Type
Grade Min
Max
Max
VR (V)
HZS39N
B1
B2
B3
B4
34.68
35.36
36.00
36.63
36.47
37.19
37.85
38.52
0.2
30
Note: Tested with pulse (PW = 40ms)
Type No. is as follows: HZS2.0NB1, HZS2.0NB2, ••• HZS39NB4.
10
8
6
4
2
0
4
12
20
24
28
32
36
40
8
16
Zener Voltage VZ (V)
Fig.1 Zener current Vs. Zener voltage
HZS-N Series
0.10
0.08
0.06
0.04
0.02
0
50
40
%/°C
30
20
mV/°C
10
0
–10
–20
–30
–0.02
–0.04
–0.06
–40
–50
–0.08
–0.10
15 20 25 30
35 40
0
5
10
Zener Voltage VZ (V)
Fig.2 Temperature Coefficient Vs. Zener voltage
500
l
2.5mm
3mm
400
Printed circuit board
×
×
100 180 1.6t mm
Material: paper phenol
300
200
l = 5mm
l = 10mm
(Publication value)
100
0
0
50
Ambient Temperature Ta (°C)
200
100
150
Fig.3 Power Dissipation Vs. Ambient Temperature
HZS-N Series
Package Dimensions
Unit: mm
26.0 Min
26.0 Min
2.4 Max
B
2
1
2
Type No. (Black)
Cathode band (Black)
Abbreviation of type name
Type name
1 Cathode
2 Anode
B
2
•••
without HZS N.
Zener voltage
classification
symbol equal
to B1 or B3.
HITACHI Code
MHD
DO-34
—
JEDEC Code
EIAJ Code
Weight (g)
Expanded drawing of marking
0.084
相关型号：
©2020 ICPDF网 联系我们和版权申明