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元器件品牌
MBM200A6
[HITACHI]
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES; 软， FAST （ SFD ），续流二极管的IGBT模块系列
元器件型号：
MBM200A6
生产厂家：
HITACHI SEMICONDUCTOR
描述和应用：
IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES
软， FAST （ SFD ），续流二极管的IGBT模块系列
二极管 双极性晶体管 栅
PDF文件：
总1页 (文件大小：82K)
下载文档：
下载PDF数据表文档文件
型号参数：MBM200A6参数
查看货源
MBM200GR6
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel,
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156
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0
HITACHI
MBM200GR6
200A, 600V, N-CHANNEL IGBT
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156
-
0
RENESAS
MBM200H45E2-H
Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES
Warning
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156
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1
HITACHI
MBM200JS12AW
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
Warning
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156
-
0
HITACHI
MBM200JS12AW
IGBT
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156
-
0
RENESAS
MBM200JS12EW
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
Warning
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156
-
0
HITACHI
MBM200JS12EW
IGBT
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156
-
0
RENESAS
MBM2212-20
MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
Warning
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on line
156
-
59
FUJITSU
MBM2212-20
MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
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156
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264
FUJITSU
MBM2212-20Z
Non-Volatile SRAM, 256X4, 200ns, MOS, CDIP18
Warning
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156
-
0
FUJITSU
MBM2212-25
MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
49
FUJITSU
MBM2212-25
MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY
Warning
: Undefined variable $rtag in
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on line
156
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38
FUJITSU
MBM2212-25P
Non-Volatile SRAM, 256X4, 250ns, MOS, PDIP18
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156
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0
FUJITSU
MBM2212-25Z
Non-Volatile SRAM, 256X4, 250ns, MOS, CDIP18
Warning
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on line
156
-
0
FUJITSU
MBM27128-20CV
EPROM, 16KX8, 200ns, MOS, CQCC32
Warning
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on line
156
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1
FUJITSU
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