MBN800H45E2-H [HITACHI]
Insulated Gate Bipolar Transistor, 800A I(C), 4500V V(BR)CES;
| 型号： | MBN800H45E2-H |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 800A I(C), 4500V V(BR)CES 栅 |
| 文件： | 总9页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P1
Target Specification
MBN800H45E2-H
Silicon N-channel IGBT 4500V E2 version
FEATURES
Low switching loss IGBT module.
Low noise due to ultra soft fast recovery diode.
High reliability, high durability module.
High thermal fatigue durability.
(delta Tc=70C, N30,000cycles)
Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item
Collector Emitter Voltage
Gate Emitter Voltage
Symbol
Unit
V
V
MBN800H45E2-H
4,500
VCES
VGES
IC
ICp
IF
IFM
Tj
Tstg
VISO
-
20
DC
1ms
DC
800 (Tc=80 oC)
1,600
Collector Current
Forward Current
A
800
1,600
-40 ~ +125
-50 ~ +125 (1)
8,400 (AC 1 minute)
A
1ms
Junction Temperature
Storage Temperature
Isolation Voltage
oC
oC
VRMS
Terminals (M4/M8)
Mounting (M6)
2/10
6
(2)
(3)
Screw Torque
N·m
-
Notes: (1) Terminal temperature shall not exceed the specified temperature in any operation.
(2) Recommended Value 1.80.2/91N·m
(3) Recommended Value 5.50.5N·m
ELECTRICAL CHARACTERISTICS
Item
Symbol Unit
Min. Typ. Max.
Test Conditions
-
-
17 VCE=4,500V, VGE=0V, Tj=25oC
67 VCE=4,500V, VGE=0V, Tj=125oC
+500 VGE=20V, VCE=0V, Tj=25oC
TBD IC=800A, VGE=15V, Tj=125oC
7.4 VCE=10V, IC=800mA, Tj=25oC
Collector Emitter Cut-Off Current
I CES
mA
-
17
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Internal Gate Resistance
Rise Time
Turn On Time
Fall Time
Turn Off Time
Peak Forward Voltage Drop
IGES
VCE(sat)
VGE(TO)
Cies
Rge
tr
nA
V
V
nF
-500
TBD
5.4
-
-
4.2
6.4
110
1.2
2.1
2.7
2.4
4.8
3.7
-
-
VCE=10V,VGE=0V, f=100kHz, Tj=25oC
VCE=10V,VGE=0V, f=100kHz, Tj=25oC
-
TBD
TBD
TBD
TBD
TBD
TBD VCC=2,600V, Ic=800A
TBD Ls=180nH
ton
tf
Switching Times
s
TBD Rg=4.7Ω
(4)
toff
TBD VGE=+/-15V, Tj=125oC
VFM
V
TBD IF=800A, VGE=0V, Tj=125oC
Vcc=2,600V, IF=800A, Ls=180nH
Reverse Recovery Time
Turn On Loss
trr
s
-
0.7
TBD
Tj=125oC
Eon(10%)
Eon(full)
Eoff(10%)
Eoff(full)
Err(10%)
Err(full)
-
-
-
-
-
-
-
-
2.1
2.5
2.1
2.5
1.7
1.9
-
TBD
-
TBD
-
TBD
-
0.013
0.026
J/p
J/ p
J/ p
K/W
K/W
VCC=2,600V, Ic= IF=800A, Ls=180nH
Turn Off Loss
Rg= 4.7Ω
(4)
VGE=+/-15V, Tj=125oC
Reverse Recovery Loss
IGBT
Thermal Impedance
FWD
Rth(j-c)
Rth(j-c)
Junction to case
-
Case to fin (grease=1W/(m･K),
Heat-sink flatness 50um)
Contact Thermal Impedance
Rth(c-f)
-
0.007
-
Notes:(4) Rg value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable Rg value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P2
Target Specification
MBN800H45E2-H
DEFINITION OF TEST CIRCUIT
Ls
LLOAD
Vcc
Rg
G/D
Fig.1 Switching test circuit
Ic
Vce
VL
Ls=
VL
dIc
( )
dｔ
t=tL
t
0
tL
Fig.2 Definition of Ls
Ic
Ic
Vce
Vce
Vce
90%
0.1Vce
Irm
90%
0.5Irm
10%
90%
10%
10%
0
0.1IF
10%
10%
t
t
t
0
0
0
0
t
t
Vge
Vge
trr
IF
tr
tf
toff
-Ic
ton
t3 t4
t1
t6
t2
t5
t9
t12 t10
t7
t8
t8
t11
t12
t4
Eon(10%)=∫ Ic･Vce dt
Eoff(10%)=∫ Ic･Vce dt
Err(10%)=∫ IF･Vce dt
t3
t7
t11
t6
t10
t2
Eon(Full)=∫ Ic･Vce dt
Eoff(Full)=∫ Ic･Vce dt
Err(Full)=∫ IF･Vce dt
t1
t5
t9
Fig.3 Definition of switching loss
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P3
Target Specification
MBN800H45E2-H
STATIC CHARACTERISTICS
VGE=17V 15V 13V
VGE=17V 15V 13V
Tentative
1600
1400
1200
1000
800
600
400
200
0
Tentative
1600
1400
1200
1000
800
600
400
200
0
Tj=25oC
Tj=125oC
11V
11V
9V
7V
9V
7V
0
2
4
6
8
10
0
2
4
6
8
10
Collector to Emitter Voltage, VCE(V)
Collector to Emitter Voltage, VCE(V)
Ic vs. VCE(Tj=25oC)
Ic vs. VCE(Tj=125oC)
Tentative
1600
VGE=0V
1400
1200
1000
800
600
400
200
0
Tj=25oC
Tj=125oC
0
1
2
3
4
5
6
Forward Voltage, VF(V)
IF vs. VF
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P4
Target Specification
MBN800H45E2-H
DYNAMIC CHARACTERISTICS
8
6
4
2
0
8
6
4
2
0
Tentative
Tentative
【Conditions】
Ls=180nH
Vcc=2600V
VG=+15V/-15V
RG=4.7Ω
【Conditions】
Ls=180nH
Vcc=2600V
VG=+15V/-15V
RG=4.7Ω
Tj=125oC
Tj=125oC
Eon(full)
Eoff(full)
0
200
400
600
800
1000 1200 1400 1600 1800
0
200
400
600
800
1000 1200 1400 1600 1800
Collector Current, IC(A)
Collector Current, IC(A)
Turn-on loss vs. Collector current
Turn-off loss vs. Collector current
8
10
Tentative
Tentative
【Conditions】
Ls=180nH
【Conditions】
Ls=180nH
Vcc=2600V
VG=+15V/-15V
RG=4.7Ω
Tj=125oC
Vcc=2600V
VG=+15V/-15V
RG=4.7Ω
Tj=125oC
6
4
2
0
toff
5
Err(full)
tf
ton
tr
trr
0
0
200
400
600
800 1000 1200 1400 1600 1800
0
200
400
600
800 1000 1200 1400 1600 1800
Collector Current, IC,IF(A)
Forward Current, IF(A)
Recovery loss vs. Forward current
Switching time vs. Collector current
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P5
Target Specification
MBN800H45E2-H
TRANSIENT THERMAL IMPEDANCE
Tentative
0.1
FWD
IGBT
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Time (s)
Transient Thermal Impedance Curve (Maximum Value)
Material declaration
Please note that following materials are contained in the product
In order to keep characteristics and reliability level.
Material
Contained part
Solder
Lead (Pb) and its compounds
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P6
Target Specification
MBN800H45E2-H
Module Outline Drawing
Unit: mm
Weight: 1050(g)
Circuit diagram
C
C
E
C
G
E
E
TERMINALS
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P7
Target Specification
MBN800H45E2-H
QG-VGE Curve
Tentative
Conditions: Ls=180nH,VCC=2600V,VGE=+/-15V,
RG(on/off)=39/39,Tj=25oC,
15
10
5
0
-5
-10
-15
-10 -8 -6 -4 -2
0
2
4
6
8
10
QG (uC)
QG-VGE curve
Cies, Coes, Cres Curve
Tentative
1000
100
10
【Conditions】
Tj=25℃
f=100kHz
Cies
Coes
Cres
1
0.1
1
10
100
Collector to Emitter Voltage, VCE (V)
Capacitance vs. Collector to Emitter Voltage
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P8
Target Specification
MBN800H45E2-H
RBSOA
VCE( spike Voltage)
IC( to be turned off )
Conditions: Vcc3000V, Ic1600A,
Rg4.7,
Ic
Vce
t
VGE=±15V, -40oCTj125oC,
0
Ls180nH, on pulse width10us
( Vce spike voltage and Ls are defined at auxiliary terminal)
Definition of RBSOAwaveform
1800
1600
1400
1200
1000
800
600
400
200
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500 5000
VCE( spike Voltage ) (V) (at auxiliary terminal)
Reverse bias safe operation area ( RBSOA )
IGBT MODULE
Spec.No.IGBT-SP-10004 R2 P9
Target Specification
MBN800H45E2-H
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi Power Semiconductor Device, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part,
without the expressed written permission of Hitachi Power Semiconductor Device, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives that is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/
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