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元器件品牌
2SC3658
[HITACHI]
HIGH VOLTAGE,HIGH POWER SWITCHING; 高电压，大功率开关
元器件型号：
2SC3658
生产厂家：
HITACHI SEMICONDUCTOR
描述和应用：
HIGH VOLTAGE,HIGH POWER SWITCHING
高电压，大功率开关
开关 高压 高功率电源
PDF文件：
总1页 (文件大小：41K)
下载文档：
下载PDF数据表文档文件
型号参数：2SC3658参数
查看货源
2SC3658_15
Silicon NPN Power Transistors
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156
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0
JMNIC
2SC3658_2014
Silicon NPN Power Transistors
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156
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0
JMNIC
2SC3659
HIGH VOLTAGE,HIGH POWER SWITCHING
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156
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21
HITACHI
2SC3659
isc Silicon NPN Power Transistor
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156
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11
ISC
2SC3660
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 24A I(C) | RFMOD
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156
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63
ETC
2SC3660A
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 24A I(C) | RFMOD
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156
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40
ETC
2SC3661
High-hFE, Low-Frequency General-Purpose Amp Applications
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156
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62
SANYO
2SC3661
NPN Epitaxial Planar Silicon Transistor
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156
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30
KEXIN
2SC3661
Low frequency general-purpose amplifiers, drivers, muting circuit.
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156
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21
TYSEMI
2SC3663
Low-voltage, low-current, low-noise and high-gain Gold electrode gives high reliability.
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156
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10
TYSEMI
2SC3663
NPN Epitaxial Silicon Transistor
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156
-
11
KEXIN
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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156
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71
NEC
2SC3663
RF Small Signal Bipolar Transistor, 0.005A I(C), 1-Element, Silicon, NPN, MINIMOLD PACKAGE-3
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0
NEC
2SC3663-K
RF Small Signal Bipolar Transistor, 0.005A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3
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0
NEC
2SC3663-K-A
RF Small Signal Bipolar Transistor, 0.005A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3
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0
NEC
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