2SK1968 [HITACHI]

Silicon N-Channel MOS FET; 硅N沟道MOS FET

2SK1968


型号：	2SK1968
厂家：	HITACHI SEMICONDUCTOR
描述：	Silicon N-Channel MOS FET 硅N沟道MOS FET 晶体晶体管功率场效应晶体管局域网
文件：	总10页 (文件大小：50K)
下载：	下载PDF数据表文档文件

2SK1968-E

Silicon N Channel MOS FET

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26 RENESAS

2SK1969-01

N-channel MOS-FET

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69 FUJI

2SK1969-01

MOSFETs

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26 ETC

2SK1969-01

Power Field-Effect Transistor, 50A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 FUJI

2SK196H

TRANSISTOR | MOSFET | N-CHANNEL | 160V V(BR)DSS | 500MA I(D) | TO-39

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61 ETC

2SK197

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109 ETC

2SK1971

Silicon N-Channel MOS FET

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67 HITACHI

2SK1971

Silicon N Channel MOS FET

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19 RENESAS

2SK1971-E

Silicon N Channel MOS FET

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29 RENESAS

2SK1973

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-221VAR

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53 ETC

2SK1973F5

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR

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28 ETC

2SK1973TR

Power Field-Effect Transistor, 2A I(D), 60V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 ROHM

2SK1974

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-220VAR

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43 ETC

2SK1975

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-247

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31 ETC

2SK1975F31

Power Field-Effect Transistor, 10A I(D), 450V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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0 ROHM

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