372LP3E [HITTITE]

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz; 的GaAs PHEMT MMIC低噪声放大器, 700 - 1000兆赫
372LP3E
型号: 372LP3E
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz
的GaAs PHEMT MMIC低噪声放大器, 700 - 1000兆赫

放大器
文件: 总8页 (文件大小:351K)
中文:  中文翻译
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HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Typical Applications  
Features  
The HMC372LP3 / HMC372LP3E is ideal for  
basestation receivers:  
Noise Figure: <1.0 dB  
+34 dBm Output IP3  
• GSM, GPRS & EDGE  
• CDMA & W-CDMA  
Gain: 15 dB  
Very Stable Gain vs. Supply & Temperature  
Single Supply: +5.0 V @ 100 mA  
50 Ohm Matched Output  
• Private Land Mobile Radio  
Functional Diagram  
General Description  
The HMC372LP3 & HMC372LP3E are GaAs PHEMT  
MMIC Low Noise Amplifiers that are ideal for GSM  
& CDMA cellular basestation front-end receivers  
operating between 700 and 1000 MHz. The amplifier  
has been optimized to provide 1.0 dB noise figure, 15  
dB gain and +34 dBm output IP3 from a single supply  
of +5.0V @ 100 mA. Input and output return losses are  
25 and 14 dB respectively with the LNA requiring only  
four external components to optimize the RF Input  
match, RF ground and DC bias. The HMC372LP3 &  
HMC372LP3E share the same package and pinout  
with the HMC356LP3 high IP3 LNA. A low cost,  
leadless 3x3 mm (LP3) SMT QFN package houses  
the low noise amplifier.  
Electrical Specifications, TA = +25° C, Vs = +5V  
Parameter  
Min.  
Typ.  
810 - 960  
14.5  
0.008  
1.0  
Max.  
Min.  
11.5  
Typ.  
700 - 1000  
14.5  
0.008  
1.0  
Max.  
Units  
MHz  
dB  
Frequency Range  
Gain  
12.5  
Gain Variation Over Temperature  
Noise Figure  
0.015  
1.3  
0.015  
1.3  
dB / °C  
dB  
Input Return Loss  
25  
25  
dB  
Output Return Loss  
14  
12  
dB  
Reverse Isolation  
20  
22  
dB  
Output Power for 1dB Compression (P1dB)  
Saturated Output Power (Psat)  
18  
21  
17  
30  
20  
dBm  
dBm  
23.5  
22.5  
Output Third Order Intercept (IP3)  
(-20 dBm Input Power per tone, 1 MHz tone spacing)  
34  
33  
dBm  
mA  
Supply Current (Idd)  
100  
100  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 96  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
Gain, Noise Figure &  
Power vs. Supply Voltage @ 850MHz  
5
Broadband Gain & Return Loss  
20  
15  
10  
5
1.2  
1.1  
1
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
S21  
S11  
S22  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0
-5  
Gain  
P1dB  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
Noise Figure  
0.25  
0.5  
0.75  
1
1.25  
1.5  
1.75  
2
1
1
4.5  
4.75  
5
5.25  
5.5  
FREQUENCY (GHz)  
VOLTAGE SUPPLY (Vdd)  
Gain vs. Temperature  
Noise Figure vs. Temperature  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
1.5  
1.4  
1.3  
1.2  
1.1  
1
+ 25 C  
+ 85 C  
- 40 C  
0.9  
0.8  
0.7  
0.6  
0.5  
+ 25 C  
+ 85 C  
- 40 C  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Noise Figure vs. Vdd  
Gain vs. Vdd  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
1.5  
1.4  
1.3  
1.2  
1.1  
1
+ 4.5 V  
+ 5.0 V  
+ 5.5 V  
+ 4.5 V  
+ 5.0 V  
+ 5.5 V  
0.9  
0.8  
0.7  
0.6  
0.5  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 97  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Input Return Loss vs. Temperature  
Output Return Loss vs. Temperature  
0
0
-2  
-4  
-5  
-10  
+ 25 C  
-6  
-8  
+25 C  
+85 C  
-40 C  
+ 85 C  
- 40 C  
-15  
-20  
-25  
-30  
-35  
-40  
-10  
-12  
-14  
-16  
-18  
-20  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output IP3 vs. Temperature  
P1dB & Psat vs. Temperature  
40  
25  
39  
24  
23  
38  
37  
36  
35  
34  
33  
32  
31  
30  
+ 25 C  
+ 85 C  
- 40 C  
PSAT  
22  
21  
20  
P1dB  
19  
18  
17  
16  
15  
+25 C  
+85 C  
-40 C  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Output IP3 vs. Vdd  
P1dB vs. Vdd  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
+ 4.5 V  
+ 5.0 V  
+ 5.5 V  
+ 4.5 V  
+ 5.0 V  
+ 5.5 V  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 98  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Output IP3 vs. Input Power @ 950 MHz  
Reverse Isolation vs. Temperature  
0
40  
39  
1 MHz Tone Separation  
-5  
6 MHz Tone Separation  
38  
+25 C  
+85 C  
-40 C  
37  
36  
35  
34  
33  
32  
31  
30  
-10  
-15  
-20  
-25  
-30  
0.7  
0.75  
0.8  
0.85  
0.9  
0.95  
1
-20  
-15  
-10  
-5  
0
FREQUENCY (GHz)  
INPUT POWER PER TONE (dBM)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 99  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Absolute Maximum Ratings  
Typical Supply Current vs. Vdd  
Vdd (Vdc)  
Idd (mA)  
Drain Bias Voltage (Vdd)  
+8.0 Vdc  
+4.5  
98  
RF Input Power (RFin)(Vs = +5.0 Vdc)  
Channel Temperature  
+15 dBm  
+5.0  
100  
150 °C  
+5.5  
102  
Continuous Pdiss (T = 85 °C)  
(derate 15.6 mW/°C above 85 °C)  
1.015 W  
Thermal Resistance  
(channel to ground paddle)  
64.1 °C/W  
Storage Temperature  
Operating Temperature  
-65 to +150 °C  
-40 to +85 °C  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
Outline Drawing  
NOTES:  
1. LEADFRAME MATERIAL: COPPER ALLOY  
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE  
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.  
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.  
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.  
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.  
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H372  
XXXX  
HMC372LP3  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
H372  
XXXX  
MSL1 [2]  
HMC372LP3E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 100  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Pin Descriptions  
Pin Number  
Function  
Description  
No connection necessary.  
Interface Schematic  
1, 5, 8, 9  
N/C  
GND  
RF IN  
These pins may be connected to RF/DC ground.  
2, 4, 6, 10, 12,  
13, 14, 16  
These pins must be connected to RF/DC ground.  
This pin is matched to 50 Ohms with a 22 nH  
inductor to ground. See Application Circuit.  
3
AC Ground - An external capacitor of 0.01μF to  
ground is required for low frequency bypassing.  
See Application Circuit for further details.  
ACG  
7, 15  
Power supply voltage. Choke inductor and bypass  
capacitor are required. See application circuit.  
Vdd  
11  
RF OUT  
This pin is AC coupled and matched to 50 Ohms.  
Application Circuit  
Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 μF 10% capacitor is recommended.  
Note 2: L1, L2 and C1 should be located as close to the pins as possible.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 101  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Evaluation PCB  
List of Materials for Evaluation PCB 106821 [1]  
The circuit board used in the final application  
should use RF circuit design techniques. Signal  
lines should have 50 ohm impedance while the  
package ground leads and exposed paddle should  
be connected directly to the ground plane similar  
to that shown. A sufficient number of VIA holes  
should be used to connect the top and bottom  
ground planes. The evaluation circuit board shown  
is available from Hittite upon request.  
Item  
J1 - J2  
J3 - J4  
C1  
Description  
PCB Mount SMA RF Connector  
DC Pin  
10000 pF Capacitor, 0402 Pkg.  
10000 pF Capacitor, 0060 Pkg.  
C2  
L1  
22nH Inductor, 0402 Pkg.  
L2  
U1  
18nH Inductor, 0603 Pkg.  
HMC372LP3 / HMC372LP3E Amplifier  
106722 Eval Board  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 102  
HMC372LP3 / 372LP3E  
v02.0605  
GaAs PHEMT MMIC LOW NOISE  
AMPLIFIER, 700 - 1000 MHz  
5
Notes:  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
5 - 103  

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