616LP3E [HITTITE]
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz; 砷化镓PHEMT SMT低噪声放大器， 175 - 660兆赫
| 型号： | 616LP3E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz |
| 文件： | 总10页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Features
Typical Applications
The HMC616LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
Low Noise Figure: 0.5 dB
High Gain: 24 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
• Repeaters and Femtocells
• Public Safety Radio
• DAB Receivers
Functional Diagram
General Description
The HMC616LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 175 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC616LP3(E) shares
the same package and pinout with the HMC617-
LP3(E)andHMC618LP3(E)LNAs.TheHMC616LP3(E)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application.
Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*
Vdd = +3 Vdc
Parameter
Vdd = +5 Vdc
Units
Min.
Typ.
175 - 230
22.5
Max.
Min.
Typ.
230 - 660
20
Max.
Min.
21
Typ.
175 - 230
24
Max.
Min.
Typ.
230 - 660
21
Max.
0.8
Frequency Range
Gain
MHz
dB
20
15
15
Gain Variation Over Temperature
Noise Figure
0.002
0.5
0.005
0.5
dB/ °C
dB
0.5
10
9
0.8
0.8
0.5
12
9
0.8
Input Return Loss
Output Return Loss
16
14
dB
10
10
dB
Output Power for 1 dB
Compression (P1dB)
8
11
10
11
15
11
15
14
19
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
8.5
13
20
30
15.5
30
12.5
17.5
32
15.5
19.5
37
dBm
dBm
mA
45
30
45
90
115
90
115
* Rbias resistor sets current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 236
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
[1]
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
24
S21
22
Vdd= 5V
Vdd= 3V
20
0
S22
+25C
+85C
- 40C
-5
18
16
14
-10
-15
-20
-25
S11
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
0.2
0.4
0.6
0.8
1
1.2
1.4
FREQUENCY (GHz)
[2]
[1]
Gain vs. Temperature
Input Return Loss vs. Temperature
24
0
22
+25C
+85C
- 40C
-5
-10
-15
-20
20
+25C
+85C
- 40C
18
16
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
[1]
[1]
Reverse Isolation vs.Temperature
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
- 40C
-5
-10
-15
-20
-10
+25C
+85C
- 40C
-15
-20
-25
-30
-35
-40
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
[1]
Noise Figure vs.Temperature
P1dB vs. Temperature
1
24
0.9
22
Vdd=5V
Vdd=3V
0.8
20
Vdd=5V
18
0.7
0.6
0.5
0.4
0.3
0.2
+85C
16
Vdd=3V
14
+25 C
+25 C
+85 C
- 40 C
12
-40C
10
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Psat vs. Temperature
Output IP3 vs.Temperature
24
Vdd=5V
40
22
20
36
32
28
Vdd=5V
18
16
Vdd=3V
14
12
10
+25 C
+85 C
- 40 C
+25 C
+85 C
- 40 C
Vdd=3V
24
0.2
0.3
0.4
0.5
0.6
0.7
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 and Idd vs.
Output IP3 and Idd vs.
Supply Voltage @ 400 MHz
Supply Voltage @ 500 MHz
140
140
40
38
36
34
32
30
28
26
40
120
100
80
60
40
20
0
120
100
80
60
40
20
0
38
36
34
32
30
28
26
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
VOLTAGE SUPPLY (V)
VOLTAGE SUPPLY (V)
[1] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
[2]
[1]
Power Compression @ 400 MHz
Power Compression @ 400 MHz
45
40
35
30
25
20
15
10
5
45
40
Pout
Gain
PAE
Pout
Gain
PAE
35
30
25
20
15
10
5
0
0
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
INPUT POWER (dBm)
[1]
[2]
Power Compression @ 500 MHz
Power Compression @ 500 MHz
45
45
40
40
Pout
Pout
Gain
Gain
PAE
35
30
25
20
15
10
5
35
30
25
20
15
10
5
PAE
0
0
-18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
INPUT POWER (dBm)
INPUT POWER (dBm)
Gain, Power & Noise Figure
Gain, Power & Noise Figure
vs. Supply Voltage @ 400 MHz
vs. Supply Voltage @ 500 MHz
1
1
24
24
GAIN
GAIN
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
22
20
18
16
14
22
20
18
16
14
P1dB
P1dB
Noise Figure
Noise Figure
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 239
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Gain Low Frequency Tune [1]
Input Return Loss Low Frequency Tune [1]
26
0
24
22
-5
-10
-15
Vdd=5V
Vdd=3V
20
18
16
14
Vdd=5V
Vdd=3V
-20
-25
0.15
0.175
0.2
0.225
0.25
0.15
0.175
0.2
0.225
0.25
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Return Loss Low Frequency Tune [1]
P1dB Low Frequency Tune [1]
0
22
20
-5
-10
-15
Vdd=5V
vdd=3V
18
16
14
12
10
8
Vdd=5V
Vdd=3V
-20
-25
0.15
0.175
0.2
0.225
0.25
0.15
0.175
0.2
0.225
0.25
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 Low Frequency Tune [1]
Noise Figure Low Frequency Tune [1] [2]
40
1
0.9
Vdd=5V
Vdd=3V
36
32
Vdd=5V
Vdd=3V
0.8
0.7
28
24
20
16
0.6
0.5
0.4
0.3
0.2
0.15
0.175
0.2
0.225
0.25
0.15
0.175
0.2
0.225
0.25
FREQUENCY (GHz)
FREQUENCY (GHz)
[1] Rbias = 2kΩ, L1 = 82 nH, L2 = 82 nH [2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 240
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Output IP3 vs. Rbias @ 400 MHz
Gain, Noise Figure & Rbias @ 400 MHz
40
38
36
34
32
30
28
26
24
22
1
24
23
22
21
20
19
18
17
16
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Vdd=5V
Vdd=3V
Vdd= 3V
Vdd= 5V
500
1000
10000
500
1000
10000
Rbias (Ohms)
Rbias(Ohms)
Output IP3 vs. Rbias @ 500 MHz
Gain, Noise Figure & Rbias @ 500 MHz
40
38
36
34
32
30
28
0.7
0.6
0.5
0.4
0.3
0.2
21
20
19
18
26
Vdd=5V
17
Vdd= 3V
Vdd= 5V
Vdd=3V
24
22
16
500
500
1000
10000
1000
10000
Rbias (Ohms)
Rbias(Ohms)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 241
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Absolute Bias Resistor
Range & Recommended Bias Resistor Values for Idd
5
Rbias (ꢀ)
Vdd (V)
Idd (mA)
Min
Max
Recommended
2.7k
3.92k
4.7k
10k
27
31
33
39
73
84
91
95
3V
5V
1K [1]
Open Circuit
820
2k
0
Open Circuit
3.92k
10k
[1] With Vdd= 3V, Rbias < 1K Ohm is not recommeded and may result in the LNA becoming conditionally stable.
Typical Supply
Absolute Maximum Ratings
Current vs. Vdd (Rbias = 3.92kΩ)
Drain Bias Voltage (Vdd)
+6 Vdc
+10 dBm
150 °C
0.58 W
Vdd (Vdc)
Idd (mA)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
2.7
20
3.0
30
Channel Temperature
3.3
40
Continuous Pdiss (T= 85 °C)
4.5
80
(derate 8.93 mW/°C above 85 °C)
5.0
90
Thermal Resistance
(channel to ground paddle)
112 °C/W
5.5
100
Note: Amplifier will operate over full voltage range shown above.
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 242
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE
MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR
SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
616
XXXX
HMC616LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
616
XXXX
MSL1 [2]
HMC616LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 3 - 5, 7, 9,
10, 12 - 14, 16
No connection required. These pins may be connected to RF/
DC ground without affecting performance.
N/C
This pin is DC coupled. DC blocking capacitor required. See
application circuit.
2
6
RFIN
This pin and ground paddle must
be connected to RF/DC ground.
GND
11
8
RFOUT
This pin is matched to 50 Ohms.
This pin is used to set the DC current of the amplifier by
selection of external bias resistor. See application circuit.
RES
Vdd
Power Supply Voltage. Choke inductor and bypass capacitors
are required. See application circuit.
15
Application Circuit
Components for Selected Frequencies
Tuned Frequency
175 - 230 MHz
2.0k Ohms
82 nH
230 - 660 MHz
3.92k Ohms
18 nH
Rbias
L1
L2
82 nH
51 nH
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 244
HMC616LP3 / 616LP3E
v00.0508
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
5
Evaluation PCB
List of Material for Evaluation PCB 120728 [1]
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appro-
priate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
Item
Description
PCB Mount SMA RF Connector
DC Pin
J1, J2
J3, J4
C1
10nF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
0.47μF Capacitor, 0603 Pkg.
100 pF Capacitor, 0402 Pkg.
18 nH Inductor, 0603 Pkg.
51 nH Inductor, 0402 Pkg.
3.92 kΩ Resistor, 0402 Pkg.
HMC616LP3(E) Amplifier
120616 Evaluation PCB
C2
C3
C4
L1
L2
R1 (Rbias)
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 245
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