HMC-XDH158 [HITTITE]
GaAs MMIC X4 ACTIVE FREQUENCY MULTIPLIER, 54 - 64 GHz OUTPUT; 砷化镓MMIC X4有源倍频器， 54 - 64 GHz的输出
| 型号： | HMC-XDH158 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC X4 ACTIVE FREQUENCY MULTIPLIER, 54 - 64 GHz OUTPUT |
| 文件： | 总6页 (文件大小：194K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC-XDH158
v01.1207
GaAs MMIC X4 ACTIVE FREQUENCY
MULTIPLIER, 54 - 64 GHz OUTPUT
Typical Applications
This HMC-XDH158 is ideal for:
• Short-Haul / High Capacity Radios
• Point-to-Point Radio
Features
Output Power: -6 dBm
Wide Input Power Range: 0 to +5 dBm
High Fo Isolation: 30 dBc
Low Conversion Loss: 8 dB
Die Size: 1.8 x 0.8 x 0.1 mm
2
• Test & Measurement Equipment
• SATCOM
• Military and Secure Communications
General Description
Functional Diagram
The HMC-XDH158 is a monolithic X4 Active Fre-
quency Multiplier which utilizes GaAs High Electron
Mobility Transistor (HEMT) technology and exhib-
its low conversion loss and high Fo isolation. This
wideband multiplier is ideal for use in LO multiplier
chains for high capacity and SATCOM radios yield-
ing reduced parts count vs. traditional approaches. All
bond pads and the die backside are Ti/Au metallized
and the HEMT devices are fully passivated for reliable
operation. The HMC-XDH158 X4 Active Frequency
Multiplier MMIC is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM
and hybrid microcircuit applications. All data shown
herein is measured with the chip in a 50 Ohm environ-
ment and contacted with RF probes.
Electrical Specifications*
TA = 25 °C, Vdd1 = 1.5V, Vdd2 = 4V, Vgg1 = -0.2V, Vgg2 = -0.3V, +2 dBm Drive Level
Parameter
Min.
Typ.
14 - 16
56 - 64
-6
Max.
Units
GHz
GHz
dBm
dB
Frequency Range Input
Frequency Range Output
Output Power
Conversion Loss
8
14
Fo Isolation with respect to output
2Fo Isolation with respect to output
36
dB
54
dB
Idd1
Idd2
14
115
mA
mA
Supply Current
*Unless otherwise indicated, all measurements are from probed die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC-XDH158
v01.1207
GaAs MMIC X4 ACTIVE FREQUENCY
MULTIPLIER, 54 - 64 GHz OUTPUT
Output Power vs. Frequency
x4 Conversion Loss vs. Frequency
-5
0
-6
-10
-20
-30
2
-7
-8
-9
-10
-11
-12
-13
-14
-15
4F
3F
F
2F
-40
-50
-60
14
14.5
15
15.5
16
14
14.5
15
FREQUENCY (GHz)
15.5
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 75
HMC-XDH158
v01.1207
GaAs MMIC X4 ACTIVE FREQUENCY
MULTIPLIER, 54 - 64 GHz OUTPUT
Absolute Maximum Ratings
RF Input Level
+7 dBm
2
Supply Voltage (Vdd1, Vdd2)
Gate Voltage (Vgg1, Vgg2)
Channel Temperature
Storage Temperature
Operating Temperature
+5 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
-1 to 0.3 Vdc
180 °C
-65 to +150 °C
-55 to +85 °C
Outline Drawing
NOTES:
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE .002”
Standard
Alternate
WP - 8
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 76
HMC-XDH158
v01.1207
GaAs MMIC X4 ACTIVE FREQUENCY
MULTIPLIER, 54 - 64 GHz OUTPUT
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
2
1
RFIN
Vdd1, Vdd2
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Power Supply for amplifier. See Assembly Drawing for
required external components.
4, 6
3
This pad is AC coupled and matched to 50 Ohms.
Gate control for amplifier. Please follow “MMIC Amplifier
Biasing Procedure” Application Note. See Assembly Draw-
ing for required external components.
2,5
Vgg1, Vgg2
GND
Die Bottom
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 77
HMC-XDH158
v01.1207
GaAs MMIC X4 ACTIVE FREQUENCY
MULTIPLIER, 54 - 64 GHz OUTPUT
Assembly Diagram
2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 78
HMC-XDH158
v01.1207
GaAs MMIC X4 ACTIVE FREQUENCY
MULTIPLIER, 54 - 64 GHz OUTPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
2
Wire Bond
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 79
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