概述
规格参数
数据手册HMC268LM1 概述
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz SMT低噪声放大器MMIC 20 - 32 GHz的 射频/微波放大器
HMC268LM1 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 包装说明： | LCC8,.2SQ,40 | Reach Compliance Code： | unknown |
| 风险等级： | 5.84 | 特性阻抗： | 50 Ω |
| 构造： | COMPONENT | 增益： | 12 dB |
| 最大输入功率 (CW)： | 15 dBm | JESD-609代码： | e4 |
| 安装特点： | SURFACE MOUNT | 功能数量： | 1 |
| 端子数量： | 8 | 最大工作频率： | 32000 MHz |
| 最小工作频率： | 20000 MHz | 最高工作温度： | 85 °C |
| 最低工作温度： | -40 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装等效代码： | LCC8,.2SQ,40 | 电源： | 4 V |
| 射频/微波设备类型： | WIDE BAND LOW POWER | 子类别： | RF/Microwave Amplifiers |
| 最大压摆率： | 50 mA | 表面贴装： | YES |
| 技术： | GAAS | 端子面层： | Gold (Au) - with Nickel (Ni) barrier |
| Base Number Matches： | 1 |
HMC268LM1 数据手册
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PDF下载HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
FEBRUARY 2001
V01.0900
Features
General Description
SMT mmWAVE PACKAGE
The HMC268LM1 is a two stage GaAs MMIC Low
Noise Amplifier (LNA) in a SMT leadless chip
carrier package covering 20 to 32 GHz. The LM1
isatruesurfacemountbroadbandmillimeterwave
package offering low loss & excellent I/O match,
preserving MMIC chip performance. Utilizing a
GaAs PHEMT process the device offers 2.6 dB
noise figure, 15 dB gain and +13 dBm output
power from a bias supply of +4V @ 45 mA. The
packaged LNA enables economical PCB SMT
assembly for millimeterwave point-to-point ra-
dios, LMDS, and SATCOM applications. As an
alternative to chip-and-wire hybrid assemblies
the HMC268LM1 eliminates the need for
wirebonding, thereby providing a consistent con-
nection interface for the customer. All data is with
the non-hermetic, epoxy sealed LM1 packaged
LNA device mounted in a 50 ohm test fixture.
1
EXCELLENT NOISE FIGURE : 2.6 dB
15 dB GAIN
P1 dB OUTPUT POWER: +13 dBm
Guaranteed Performance, Vdd = +4V*, -55 to +85 deg C
Parameter
Frequency Range**
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
20 - 26
14
26 - 30
15
30 - 32
15
GHz
dB
Gain
11
17
13
18
12
18
Noise Figure
2.5
8
3.2
2.6
7
3.4
2.8
7
3.8
dB
Input Return Loss
dB
Output Return Loss
12
8
7
dB
Reverse Isolation
26
7
33
23
9
28
23
9
28
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Voltage (Vdd)
Supply Voltage (Vgg1 &Vgg2)
Supply Current (Idd)
11
13
13
dBm
dBm
dBm
13
13
16
14
17
17
15
15
18
22
22
21
3.75 4.0
-2.0 -0.15 0.0
45 50
4.25 3.75 4.0
-2.0 -0.15 0.0 -2.0 -0.15 0.0
45 50 45 50
4.25 3.75 4.0
4.25 Vdc
Vdc
mA
* Vdd = +4V, adjust Vgg1 & Vgg2 between -2.0 to 0.0 Vdc to achieve Idd = 45 mA.
** Acceptable gain and NF peformance is achievable down to 17 GHz.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 28
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
FEBRUARY 2001
V01.0900
Broadband Gain and Return Loss
Gain
20
20
15
10
15
10
5
1
S21
S11
S22
5
0
-5
-10
-15
-20
-25
0
15
20
25
30
35
10
15
20
25
30
35
FREQUENCY (GHz)
FREQUENCY (GHz)
Isolation
Input Return Loss
0
0
-10
-20
-30
-40
-5
-10
-15
-20
-50
15
15
20
25
30
35
20
25
30
35
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure
Output Return Loss
5
0
+85 C
4
3
2
1
0
-5
-10
-15
-20
+25 C
-40 C
20
22
24
26
28
30
32
34
15
20
25
30
35
FREQUENCY (GHz)
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 29
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
V01.0900
FEBRUARY 2001
Output P1dB vs. Temperature
Output IP3 vs. Temperature
20
30
18
-40C
-40C
1
16
+25C
25
14
12
10
20
8
+85C
+25C
6
4
2
0
15
+85C
10
20
22
24
26
28
30
32
20
22
24
26
28
30
32
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature
20
+25C
18
16
14
12
-40C
+85C
10
8
6
4
2
0
20
22
24
26
28
30
32
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 30
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
V01.0900
FEBRUARY 2001
Absolute Maximum Ratings
Functional Diagram
Supply Voltage (Vdd)
+4.5 Vdc
Supply Current (Idd)
50 mA
1
Gate Bias Voltage (Vgg1 & 2)
DC Gate Current (Igg1 & 2)
-2.0 to 0.0 Vdc
4 mA
Input Power (RFin)
+15 dBm
(Vdd = +4V, RF power applied <1 sec)
Channel Temperature (Tc)
175 oC
Thermal Resistance ( jc)
(Channel Backside)
289 oC/W
Storage Temperature
Operating Temperature
-65 to +150 oC
-55 to +85 oC
See HMC268LM1 Biasing Note Page 1 - 58
Outline
1. MATERIAL:
A) PACKAGE BODY & LID: PLASTIC.
B) PIN CONTACT : COPPER, 0.5 OUNCE.
2.PLATING:ELECTROLYTICGOLD(20TO50MICROINCHESTYPICAL)OVER
ELECTROLYTIC NICKEL (50 MICROINCHES MINIMUM).
3.DIMENSIONSAREININCHES(MILLIMETERS).UNLESSOTHERWISESPECIFIED
ALL TOLERANCES ARE ± 0.005 (± 0.13).
4.ALLGROUNDSMUSTBESOLDEREDTOTHEPCBRFGROUND.
5.SEEAPPLICATIONNOTEFORRECOMMENDEDATTACHMENTTECHNIQUETOPCB.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 31
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
V01.0900
FEBRUARY 2001
HMC268LM1 Evaluation PCB
0.057
[1.45]
-B-
1
C2
Suggested Ground Via Size:
Ø0.010" (0.25) and Qty: 8 to 12
C1
0.018
[0.46]
0.039
[0.99]
0.018
[0.46]
C1
C1
0.078
[1.98]
ALL FEATURES
.003 A B
C2
C2
0.150
[3.81]
Suggested LM1 PCB Land Pattern
Tolerance:±0.003"(±0.08mm)
LM1 Evaluation PCB
ThegroundedCo-PlanarWaveGuide(G-CPW)PCBinput/outputtransitionsallowuseofGround-Signal-
Ground (GSG) probes for testing. Suggested probe pitch is 400µm (16 mils). Alternatively, the board can
be mounted in a metal housing with 2.4 mm coaxial connectors.
Evaluation Circuit Board Layout Design Details
Layout Technique
Micro Strip to G-CPW
Rogers 4003 with 1/2 oz, Cu
0.008" ( 0.20 mm)
Material
Dielectric Thickness
Microstrip Line Width
G - CPW Line Width
0.018" (0.46 mm)
0.016" (0.41 mm)
G - CPW Line to GND Gap 0.005" (0.13 mm)
Ground Via Hole Diamer
0.008" (0.13 mm)
C1
C2
100 pF Capacitor, 0402 Pkg.
10,000 pF Capacitor, 1206 Pkg.
LM1 Package Mounted to Evaluation PCB
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 32
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
V01.0900
FEBRUARY 2001
HMC268LM1 Recommended SMT Attachment Technique
Preparation & Handling of the LM1 Millimeterwave Package for Surface Mounting
225
The HMC LM1 package was designed to be compatible with
1
high volume surface mount PCB assembly processes. The
200
LM1 package requires a specific mounting pattern to allow
175
proper mechanical attachment and to optimize electrical
performance at millimeterwave frequencies. This PCB layout
150
pattern can be found on each LM1 product data sheet. It can
125
also be provided as an electronic drawing upon request from
Hittite Sales & Application Engineering.
100
75
Follow these precautions to avoid permanent damage:
Cleanliness: Observe proper handling procedures to ensure
50
clean devices and PCBs. LM1 devices should remain in their
original packaging until component placement to ensure no
25
0
1
2
3
4
5
6
7
8
contamination or damage to RF, DC & ground contact areas.
Static Sensitivity: Follow ESD precautions to protect against
ESD strikes ( see catalog page 8 - 2 ).
TIME (min)
Recommended solder reflow profile
for HMC LM1 SMT package
General Handling: Handle the LM1 package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excess pressure
to the top of the lid.
Solder Materials & Temperature Profile: Follow the information contained in the application note. Hand soldering is
not recommended. Conductive epoxy attachment is not recommended.
SolderPaste
Solder paste should be selected based on the user’s experience and be compatible with the metallization systems
used. See the LM1 data sheet Outline drawing for pin & ground contact metallization schemes.
Solder Paste Application
Solder paste is generally applied to the PCB using either a stencil printer or dot placement. The volume of solder
paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical
& electrical performance. Excess solder may create unwanted electrical parasitics at high frequencies.
SolderReflow
The soldering process is usually accomplished in a reflow oven but may also use a vapor phase process. A solder
reflow profile is suggested above.
Prior to reflowing product, temperature profiles should be measured using the same mass as the actual assemblies.
The thermocouple should be moved to various positions on the board to account for edge and corner effects and
varying component masses. The final profile should be determined by mounting the thermocouple to the PCB at the
location of the device.
Follow solder paste and oven vendor’s recommendations when developing a solder reflow profile. A standard
profile will have a steady ramp up from room temperature to the pre-heat temperature to avoid damage due to
thermal shock. Allow enough time between reaching pre-heat temperature and reflow for the solvent in the paste to
evaporate and the flux to completely activate. Reflow must then occur prior to the flux being completely driven off.
The duration of peak reflow temperature should not exceed 15 seconds. Packages have been qualified to with-
stand a peak temperature of 235°C for 15 seconds. Verify that the profile will not expose device to temperatures in
excess of 235°C.
Cleaning
A water-based flux wash may be used.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 33
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
V01.0900
FEBRUARY 2001
HMC268LM1 General Biasing & Application Circuit
Optimal biasing of the HMC268LM1 SMT two stage low noise amplifier Vdd, Vgg1 & Vgg2 DC ports is
described below. The LNA schematic is repeated below. Note the recommended addition of the external
bypass chip capacitor. For additional general MMIC amplifier biasing guidance, please refer to the Hittite
Microwave “MMIC Amplifier Biasing Procedure” found on page 8-8 in our February 2000 catalog or on
www.hittite.com under the Application Note section.
1
(Pin 2)
Vdd
C2
C1
Recommended Component Values
50 W
25 W
C1
C2
100 pF
RF IN
(PIN 8)
RF OUT
(PIN 4)
10,000 pF
Vds1
Vds2
C1
C2
C2
C1
V
1
V
2
gg
(Pin 7)
gg
(Pin 6)
IMPORTANT DC LIMITS! When biasing the HMC268LM1 please note the following;
A) Do Not exceed 3.5 Vdc on internal circuit nodes Vds1 and Vds2 (internal Drain to Source volt-
ages). Calculate the Vds1&2 voltages from the LNA schematic above.
B) Do Not bias Vdd, Vgg1 & Vgg2 DC ports in such a way that Vgs becomes a positive voltage
(internal Gate to Source voltage).
HMC268LM1BiasingSchemesforPerformanceTrade-Offs
The biasing may be adjusted slightly to achieve either low noise with lowest DC power consumption or low
noise with highest output power. Be sure to adhere to the IMPORTANT DC LIMITS! above while optimiz-
ingperformance.
A) Low Noise and Low Power Consumption : Vdd = 3.5Vdc @ Idd = 30mA. Set Vgg1 = Vgg2.
B) Low Noise and High Output Power : Vdd = 4.0Vdc @ Idd = 45mA. Utilizing Vgg1 & Vgg2 nominal
bias is obtained for a typical Idd current of 30mA for the second or “output” stage and 15 mA for
the first stage. The first step to bias the amplifier is to tune the Vgg1 = -1.0Vdc and Vgg2 to drive
30mA for the full amplifier. Then Vgg1 is reduced to obtain Idd = 45 mA of current for the amplifier.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 34
HMC268LM1
MICROWAVE CORPORATION
SMT LOW NOISE AMPLIFIER MMIC 20 - 32 GHz
V01.0900
FEBRUARY 2001
1
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
1 - 35
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