HMC315E [HITTITE]
GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz; 砷化镓的InGaP HBT MMIC放大器达林顿， DC - 7.0 GHz的
| 型号： | HMC315E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz |
| 文件： | 总6页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC315 / 315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
Typical Applications
Features
The HMC315 / HMC315E is ideal for:
• Fiber Optic OC-48 Systems
Saturated Output Power: +17 dBm
Output IP3: +33 dBm
• Microwave Test Instrumentation
• Broadband Mobile Radio Platforms
Gain: 15 dB
Single Supply: +5V to +7V
Ultra Small Package: SOT26
Functional Diagram
General Description
The HMC315 & HMC315E are ultra broadband GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single positive supply.
The surface mount SOT26 amplifier can be used as a
broadband gain stage, or used with external match-
ing for optimized narrow band applications. The Dar-
lington configuration results in reduced sensitivity to
normal process variations and provides a good 50-
ohm input/output port match. The amplifier provides
15 dB of gain and +17 dBm of saturated power while
operating from a single positive +7V supply.
Electrical Specifications, TA = +25° C, As a Function of Vcc
Vcc = +5V
Vcc = +7V
Typ.
DC - 7
15
Parameter
Units
Min.
11
Typ.
DC - 7
14
Max.
Min.
11
Max.
Frequency Range
GHz
dB
Gain
17
18
Gain Variation over Temperature
Input Return Loss
0.015
10
0.025
0.015
10
0.025
dB/°C
dB
7
3
7
Output Return Loss
7
3
7
dB
Reverse Isolation
18
8
21
18
13
15
30
21
dB
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (OIP3) @ 1.0 GHz
Noise Figure
11
16
dBm
dBm
dBm
dB
10
23
13
17.5
33
26
6.5
30
6.5
Supply Current (Icc)
50
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 68
HMC315 / 315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
Gain & Return Loss @ Vcc= +7V
Gain & Return Loss @ Vcc= +5V
20
15
10
5
20
15
10
5
S11
S21
S22
S11
S21
S22
0
0
-5
-5
-10
-15
-20
-25
-10
-15
-20
-25
0
1
2
3
4
5
6
7
7
7
8
8
8
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain vs. Temperature @ Vcc= +7V
Gain vs. Temperature @ Vcc= +5V
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
+25C
+60C
-40C
+25 C
+60 C
-40 C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Input & Output
Return Loss vs. Vcc Bias
Reverse Isolation vs. Vcc Bias
0
0
-5
-5
-10
-15
S12 Vcc=7V
S12 Vcc=5V
-10
-15
-20
-25
-30
S11 Vcc=7V
S22 Vcc=7V
S11 Vcc=5V
S22 Vcc=5V
-20
-25
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 69
HMC315 / 315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
P1dB vs. Temperature @ Vcc= +7V
P1dB vs. Temperature @ Vcc= +5V
20
18
16
14
12
10
8
20
18
16
14
12
10
8
+25 C
+60 C
-40 C
6
4
2
0
6
+25 C
+60 C
-40 C
4
2
0
0
1
2
3
4
5
6
7
7
7
8
8
8
0
1
2
3
4
5
6
7
7
7
8
8
8
FREQUENCY (GHz)
FREQUENCY (GHz)
Psat vs. Temperature @ Vcc= +7V
Psat vs. Temperature @ Vcc= +5V
20
18
16
14
12
10
8
20
18
16
14
12
10
8
+25 C
+60 C
-40 C
6
4
2
0
6
+25C
+60C
-40C
4
2
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs.
Temperature @ Vcc= +7V
Output IP3 vs.
Temperature @ Vcc= +5V
40
38
36
34
32
30
28
26
24
22
20
30
28
26
24
22
20
18
16
14
12
10
+25 C
+60 C
-40 C
18
+25 C
+60 C
-40 C
16
14
12
10
0
1
2
3
4
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 70
HMC315 / 315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
Power Compression
@ 1.0 GHz, Vcc= +7V
Power Compression
@ 1.0 GHz, Vcc= +5V
8
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
-10
-2
-4
-6
-8
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm)
Gain (dB)
PAE (%)
-10
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
8
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
INPUT POWER (dBm)
INPUT POWER (dBm)
Power Compression
@ 3.0 GHz, Vcc= +7V
Power Compression
@ 3.0 GHz, Vcc= +5V
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-2
-4
-6
Pout (dBm)
Gain (dB)
PAE (%)
Pout
Gain (dB)
PAE (%)
-8
-8
-10
-10
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
0
2
4
6
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
INPUT POWER (dBm)
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 71
HMC315 / 315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
Application Circuit
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +7.0 Vdc)
Junction Temperature
+7.5 Vdc
+11 dBm
150 °C
Continuous Pdiss (T = 60 °C)
(derate 4.14 mW/°C above 60 °C)
0.373 W
Thermal Resistance
(junction to lead)
242 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +60 °C
Class 1A
%,%#42/34!4)# 3%.3)4)6% $%6)#%
/"3%26% (!.$,).' 02%#!54)/.3
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1.
2. External Blocking Capacitors are required on Pins 1 & 3.
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H315
XXXX
HMC315
Low Stress Injection Molded Plastic
Sn/Pb Solder
315E
XXXX
MSL1 [2]
HMC315E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 72
HMC315 / 315E
v02.0605
GaAs InGaP HBT MMIC DARLINGTON
AMPLIFIER, DC - 7.0 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 104217 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
Item
J1, J2
U1
Description
PCB Mount SMA Connector
HMC315 / HMC315E Amplifier
Evaluation PCB 1.5” x 1.5”
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 73
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