HMC327MS8G [HITTITE]
GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz; 砷化镓的InGaP HBT MMIC功率放大器， 3.0 - 4.0 GHz的
| 型号： | HMC327MS8G |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz |
| 文件： | 总8页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.6 GHz applications:
Features
8
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
• Wireless Local Loop
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC327MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
3.0 and 4.0 GHz. The amplifier is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifier provides 21 dB of gain,
+30 dBm of saturated power at 45% PAE from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when
the amplifier is not in use.
Electrical Specifications,TA = +25° C, Vs = 5V, Vctl = 5V
Parameter
Min.
Typ.
Max.
Units
GHz
dB
Frequency Range
3.0 - 4.0
Gain
17
21
24
Gain Variation Over Temperature
Input Return Loss
0.025
0.035
dB / °C
dB
15
Output Return Loss
8
dB
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
24
36
27
dBm
dBm
dBm
dB
30
40
5.0
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
0.002 / 250
mA
7
mA
tON, tOFF
40
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 104
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Broadband Gain & Return Loss
Gain vs.Temperature
8
25
20
15
24
22
20
18
16
14
12
10
8
S21
S11
10
5
0
S22
-5
-10
-15
-20
-25
+25 C
6
+85 C
4
-40 C
2
0
2
2.5
3
3.5
4
4.5
5
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.Temperature
Output Return Loss vs.Temperature
0
0
+25 C
-5
-10
-15
-20
-25
-30
+25 C
+85 C
-40 C
+85 C
-40 C
-5
-10
-15
2.5
3
3.5
FREQUENCY (GHz)
4
4.5
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
P1dB vs.Temperature
Psat vs.Temperature
34
32
30
28
26
24
22
20
18
16
14
34
32
30
28
26
24
22
20
18
16
14
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
2.5
3
3.5
4
4.5
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 105
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Power Compression @ 3.5 GHz
Output IP3 vs.Temperature
8
48
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
42
Pout (dBm)
Gain (dB)
36
PAE (%)
30
24
18
12
6
+25 C
+85 C
-40 C
0
-5
-3
-1
1
3
5
7
9
11
13
15
2.5
3
3.5
4
4.5
INPUT POWER (dBm)
FREQUENCY (GHz)
Noise Figure vs.Temperature
Gain & Power vs. Supply Voltage
32
31
30
29
28
27
26
25
24
23
22
28
27
26
25
24
23
22
21
20
10
9
8
7
6
5
4
3
2
1
0
+25 C
+85 C
-40 C
P1dB
Psat
Gain
19
18
4.75
5
5.25
3
3.5
4
4.5
Vcc SUPPLY VOLTAGE (Vdc)
FREQUENCY (GHz)
Reverse Isolation vs.Temperature
Power Down Isolation
0
0
-5
+25 C
-10
-20
-30
-40
-50
-60
+85 C
-40 C
-10
-15
-20
-25
-30
-35
-40
2.5
3
3.5
4
4.5
2.5
3
3.5
4
4.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 106
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Gain, Power & Quiescent Supply
Current vs. Vpd @ 3.5 GHz
Absolute Maximum Ratings
8
250
200
150
100
50
30
25
20
15
10
5
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
+5.5 Vdc
+5.5 Vdc
+20 dBm
150 °C
RF Input Power (RFin)(Vs = Vctl = +5.0 Vdc)
Junction Temperature
P1dB
Psat
Gain
Continuous Pdiss (T = 85 °C)
(derate 29 mW/°C above 85 °C)
1.88 W
Icq
Thermal Resistance
(junction to ground paddle)
34 °C/W
0
2.5
3
3.5
4
4.5
5
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Vpd (Vdc)
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 107
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Pin Descriptions
8
Pin Number
Function
Description
Interface Schematic
Power Control Pin. For maximum power, this pin hsould be connected to
5.0V. A higher voltage is not recommended. For lower idle current, this
voltage can be reduced.
1
Vpd
Ground: Backside of package has exposed metal ground slug that must
be connected to ground thru a short path. Vias under the device are
required.
2, 4, 7
GND
3
RF IN
This pin is AC coupled and matched to 50 Ohms from 3.0 to 4.0 GHz.
RF output and bias for the output stage. The power supply for the output
device needs to be supplied to these pins.
5, 6
RF OUT
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required. This capacitor should be placed as close
to the device as possible.
8
Vcc
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 108
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Evaluation PCB
8
List of Material
The circuit board used in the final application should use RF
circuit design techniques. Signal lines should have 50 ohm
impedance while the package ground leads and exposed
paddle should be connected directly to the ground plane
similar to that shown. A sufficient number of VIA holes
should be used to connect the top and bottom ground
planes. The evaluation board should be mounted to an
appropriate heat sink.The evaluation circuit board shown is
available from Hittite upon request.
Item
J1 - J2
J3
Description
PC Mount SMA RF Connector
2 mm DC Header
C1 - C3
C4
330 pF Capacitor, 0603 Pkg.
1.2 pF Capacitor, 0603 Pkg.
2.0 pF Capacitor, 0402 Pkg.
2.2 µF Capacitor, Tantalum
3.0 nH Inductor, 0805 Pkg.
130 Ohm Resistor, 0603 Pkg.
HMC327MS8G Amplifier
104829 Eval Board
C5
C6
L1
R1
U1
PCB*
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 109
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Application Circuit
8
TL1
TL2
TL3
50 Ohm
0.1”
Impedance
Length
50 Ohm
0.038”
50 Ohm
0.231”
Note 1: C3 should be located < 0.020” from Pin 8 (Vcc)
Note 2: C2 should be located < 0.020” from L1.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 110
HMC327MS8G
v02.1202
MICROWAVE CORPORATION
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
Notes:
8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
8 - 111
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