HMC344 [HITTITE]
GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz; 砷化镓MMIC SP4T非反射开关， DC - 8.0 GHz的
| 型号： | HMC344 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC SP4T NON-REFLECTIVE SWITCH, DC - 8.0 GHz |
| 文件： | 总6页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC344
v01.0404
MICROWAVE CORPORATION
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Typical Applications
The HMC344 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Features
Broadband Performance: DC - 8.0 GHz
Low Insertion Loss: 1.8 dB @ 6.0 GHz
Integrated 2:4 TTL Decoder
Small Size: 1.08 mm x 1.05 mm x 0.10 mm
• Test Instrumentation
General Description
Functional Diagram
The HMC344 is a broadband non-reflective GaAs
MESFET SP4T switch chip. Covering DC to 8.0
GHz, this switch offers high isolation and low
insertion loss and extends the frequency cover-
age of Hittite’s SP4T switch product line. This
switch also includes an on board binary decoder
circuit which reduces the required logic control
lines to two. The switch operates using a nega-
tive control voltage of 0/-5V, and requires a fixed
bias of -5V. All data is tested with the chip in a 50
Ohm test fixture connected via 0.025 mm (1 mil)
diameter wire bonds of minimal length 0.31 mm
(12 mils).
7
Electrical Specifications,TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
DC - 6.0 GHz
DC - 8.0 GHz
1.8
1.9
2.1
2.2
dB
dB
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
44
37
34
30
49
42
39
35
dB
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 8.0 GHz
10
7
14
10
dB
dB
Return Loss
“On State”
“Off State”
Return Loss
DC - 8.0 GHz
0.5 - 8.0 GHz
7
10
21
dB
Input Power for 1 dB Compression
17
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone)
0.5 - 8.0 GHz
DC - 8.0 GHz
37
40
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
35
150
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 20
HMC344
v01.0404
MICROWAVE CORPORATION
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
InseGrtiaoAn sLoMssMvIsC.TeSmUpBer-aHtuAreRMONICALLY IPsoUlaMtiPonED MIXER 17 - 25 GHz
1
0
-10
-20
-30
-40
-50
-60
-70
-80
+ 25C
+ 85C
- 55C
RF1
RF2
RF3
RF4
0
-1
-2
-3
-4
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss
0.1 and 1 dB Input Compression Point
0
25
24
23
22
21
20
19
18
7
RFC
RF1, RF2, RF3, RF4 ON
RF1, RF2, RF3, RF4 OFF
-5
-10
-15
-20
17
16
15
1dB Compression Point
0.1dB Compression Point
0
1
2
3
4
5
6
7
8
9
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Third Order Intercept Point
45
44
43
42
41
40
39
38
37
36
35
RF1
RF2
RF3
RF4
1
2
3
4
5
6
7
8
9
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 21
HMC344
v01.0404
MICROWAVE CORPORATION
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Absolute Maximum Ratings
Truth Table
Bias Voltage Range (Vee)
Control Voltage Range (A & B)
Channel Temperature
-7.0 Vdc
Control Input
Signal Path State
Vee -0.5V to +1.0 Vdc
150 °C
A
B
RF COM to:
RF1
High
Low
High
Low
High
High
Low
Low
Thermal Resistance
(Insertion Loss Path)
RF2
143 °C/W
RF3
Thermal Resistance
(Terminated Path)
1,030 °C/W
RF4
Storage Temperature
Operating Temperature
Maximum Input Power
-65 to +150 °C
-40 to +85 °C
+24 dBm
TTL/CMOS Control Voltages
State
Bias Condition
Low
-3V to 0 Vdc @ 60 uA Typ.
-5 to 4.2 Vdc @ 5 uA Typ.
Bias Voltage & Current
High
Vee Range= -5.0 Vdc 10%
Vee
(Vdc)
Idd (Typ)
(mA)
Idd (Max)
(mA)
7
-5.0
3.0
6.0
Outline Drawing
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS 0.004”.
3. TYPICAL BOND PAD IS 0.004” SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 22
HMC344
v01.0404
MICROWAVE CORPORATION
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
RF4, RFC, RF1,
RF2, RF3
These pads are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
1, 2, 3, 4, 5, 9
6
A
B
See truth table and control voltage table.
See truth table and control voltage table.
7
8
Vee
Supply Voltage -5.0 Vdc 10%
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
7
TTL Interface Circuit
Note:
Control inputs A and B can be driven directly with TTL logic with -5 Volts applied to the HCT logic gates Vee pin and to
Vee (pad) of the RF Switch.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 23
HMC344
v01.0404
MICROWAVE CORPORATION
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Assembly Diagram
7
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip
to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 24
HMC344
v01.0404
MICROWAVE CORPORATION
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8.0 GHz
Notes:
7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 25
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