HMC347 [HITTITE]
GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz; 砷化镓MMIC SPDT无反射开关， DC - 20.0 GHz的
| 型号： | HMC347 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 20.0 GHz |
| 文件： | 总6页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC347
v02.0404
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
Typical Applications
Features
This switch is suitable DC - 20 GHz applications:
High Isolation: >40 dB @ 20 GHz
Low Insertion Loss: 1.6 dB @ 20 GHz
Non-Reflective Design
• Fiber Optics
• Microwave Radio
• Military
Small Size: 0.8 mm x 1.3 mm x 0.1 mm
• Space
• VSAT
General Description
Functional Diagram
The HMC347 is a broadband non-reflective GaAs
MESFET SPDT MMIC chip. Covering DC to
20 GHz, the switch offers high isolation and low
insertion loss. The switch features over 50 dB
isolation at lower frequencies and over 40 dB at
higher frequencies due to the implementation of
on-chip via hole structures. The switch operates
using two negative control voltage logic lines of
-5/0V, requires no Vee and has no current con-
sumption. The switch operates down to DC. The
chip features coplanar I/Os that allow 100% RF
testing prior to delivery to the customer.
7
Electrical Specifications,TA = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Frequency
Min.
Typ.
1.7
45
Max.
2.2
Units
dB
Insertion Loss
Isolation
DC - 20.0 GHz
DC - 20.0 GHz
DC - 20.0 GHz
DC - 20.0 GHz
0.5 - 20.0 GHz
0.5 - 20.0 GHz
40
10
8
dB
Return Loss
“On State”
“On State”
13
dB
Return Loss RF1, RF2
10
dB
Input Power for 1 dB Compression
Input Third Order Intercept
19
38
23
dBm
dBm
43
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 20.0 GHz
3
6
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 26
HMC347
v02.0404
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
InseGrtiaoAn sLoMssMIC SUB-HARMONICALLY IPsoUlaMtiPonED MIXER 17 - 25 GHz
0
-10
-20
-30
-40
-50
-60
-70
0
RF1
RF2
-1
-2
-3
+25C
-55C
+85C
-4
-5
0
5
10
15
20
25
0
5
10
15
20
25
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss
0.1 and 1 dB Input Compression Point
0
30
7
1 dB Compression Point
0.1 dB Compression Point
RFC
RF1,2 On
RF1,2 Off
-5
-10
-15
-20
-25
25
20
15
10
0
5
10
15
20
25
0
5
10
15
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Third Order Intercept Point
50
45
40
35
30
+25C
-55C
+85C
0
2
4
6
8
10
12
14
16
18
20
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 27
HMC347
v02.0404
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
Truth Table
Control Voltages
Control Input
Signal Path State
State
Low
Bias Condition
A
B
RFC to RF1
ON
RFC to RF2
OFF
0 to -0.2V @ 10 uA Max.
-5V @ 10 uA Typ. to -7V @ 40 uA Max.
High
Low
Low
High
High
OFF
ON
Absolute Maximum Ratings
RF Input Power (Vctl = -5V)
Control Voltage Range (A & B)
Channel Temperature
+27 dBm
+0.5V to -7.5 Vdc
150 °C
Thermal Resistance
(Insertion Loss Path)
440 °C/W
540 °C/W
Thermal Resistance
(Terminated Path)
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
7
Pad Locations & Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES (MILLIMETERS)
2. ALL TOLERANCES ARE 0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 28
HMC347
v02.0404
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
Suggested Driver Circuit
7
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is DC coupled and matched to 50 Ohm. Blocking capacitors are
required if the RF line potential is not equal to 0V.
1, 4, 7
RFC, RF1, RF2
2, 5, 8, 10
3, 6, 9
CTRLA
CTRLB
See truth table and control voltage table.
See truth table and control voltage table.
GND
Die bottom must be connected to RF ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 29
HMC347
v02.0404
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
Assembly Diagram
7
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-
dling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bring-
ing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die
should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One
way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader
(moly-tab) which is then attached to the ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-
to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 30
HMC347
v02.0404
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
SWITCH, DC - 20.0 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness:
Handle the chips in a clean environment.
DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > 250V ESD strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.
The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
7
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265
deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds
of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter
of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as
possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
7 - 31
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