HMC435MS8G [HITTITE]

SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz; SPDT无反射开关, DC - 4.0 GHz的
HMC435MS8G
型号: HMC435MS8G
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
SPDT无反射开关, DC - 4.0 GHz的

开关 光电二极管
文件: 总6页 (文件大小:190K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
Typical Applications  
Features  
High Isolation: 60 dB @ 1 GHz  
50 dB @ 2 GHz  
The HMC435MS8G is ideal for:  
• Basestation Infrastructure  
• MMDS & 3.5 GHz WLL  
• CATV/CMTS  
Positive Control: 0/+5V  
51 dBm Input IP3  
Non-Reflective Design  
MS8G SMT Package, 14.8 mm2  
Test Instrumentation  
Functional Diagram  
General Description  
The HMC435MS8G is a non-reflective DC to 4  
GHz GaAs MESFET SPDT switch in a low cost  
8 lead MSOP8G surface mount package with an  
exposed ground paddle. The switch is ideal for  
cellular/PCS/3G basestation applications yielding  
50 to 60 dB isolation, low 0.8 dB insertion loss and  
+50 dBm input IP3. Power handling is excellent  
up through the 3.5 GHz WLL band with the switch  
offering a P1dB compression point of +31 dBm.  
On-chip circuitry allows positive voltage control of  
0/+5 Volts at very low DC currents.  
14  
Electrical Specifications,TA = +25° C, Vctl = 0/+5 Vdc, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 2.5 GHz  
DC - 3.6 GHz  
DC - 4.0 GHz  
0.8  
1.2  
1.5  
1.0  
1.5  
1.8  
dB  
dB  
dB  
Insertion Loss  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.6 GHz  
DC - 4.0 GHz  
56  
46  
43  
37  
30  
60  
50  
47  
41  
35  
dB  
dB  
dB  
dB  
dB  
Isolation (RFC to RF1/RF2)  
DC - 2.5 GHz  
DC - 3.6 GHz  
DC - 4.0 GHz  
15  
13  
11  
20  
17  
15  
dB  
dB  
dB  
Return Loss (On State)  
Return Loss (Off State)  
0.5 - 4.0 GHz  
0.5 - 4.0 GHz  
16  
27  
21  
31  
dB  
Input Power for 1 dB Compression  
dBm  
0.5 - 1.0 GHz  
0.5 - 2.5 GHz  
0.5 - 4.0 GHz  
48  
45  
41  
51  
48  
45  
Input Third Order Intercept  
(Two-Tone Input Power = +7 dBm Each Tone)  
dBm  
Switching Speed  
DC - 4.0 GHz  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
40  
60  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 230  
HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
InseGrtiaoAn sLoMssMIC SUB-HARMONICALLY RPeUtuMrnPLEoDssMIXER 17 - 25 GHz  
0
-1  
-2  
-3  
-4  
-5  
0
-5  
RFC  
RF1, RF2 OFF  
RF1, RF2 ON  
-10  
-15  
-20  
-25  
-30  
+ 25C  
+ 85C  
- 40C  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Isolation Between  
Ports RFC and RF1 / RF2  
Isolation Between Ports RF1 and RF2  
0
0
14  
-10  
-10  
RF1  
RF2  
RFC - RF1 ON  
RFC - RF2 ON  
-20  
-20  
-30  
-40  
-50  
-60  
-70  
-30  
-40  
-50  
-60  
-70  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
FREQUENCY (GHz)  
FREQUENCY (GHz)  
0.1 and 1 dB Input Compression Point  
Input Third Order Intercept Point  
35  
60  
58  
+25 C  
+85 C  
-40 C  
56  
54  
52  
50  
48  
46  
44  
42  
40  
30  
25  
1 dB Compression Point  
0.1 dB Compression Point  
20  
15  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 231  
HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
Absolute Maximum Ratings  
Truth Table  
Control Voltage Range  
-0.5 to +7.5 Vdc  
-65 to +150 °C  
-40 to +85 °C  
+31 dBm  
Control Input  
Signal Path State  
RFC to:  
RF1  
Storage Temperature  
A
B
Operating Temperature  
RF Input Power Vctl = 0/+5V  
Low  
High  
High  
Low  
RF2  
DC blocks are required at ports RFC, RF1, RF2.  
Control Voltages  
*Control Input Tolerances are 0.2 Vdc  
Do not operate continuously at RF power input greater  
than 1 dB compression and do not “Hot Switch” power  
levels greater than +24 dBm (control = 0/+5 Vdc).  
State  
Low  
Bias Condition*  
0 Vdc @ 25 µA Typical  
+5 Vdc @ 25 µA Typical  
High  
Outline Drawing  
14  
NOTES:  
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED  
PLASTIC SILICA AND SILICON IMPREGNATED.  
2. LEADFRAME MATERIAL: COPPER ALLOY  
3. LEADFRAME PLATING: Sn/Pb SOLDER  
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].  
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED  
TO PCB RF GROUND.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 232  
HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
1
A
See truth and control voltage tables.  
See truth and control voltage tables.  
2
B
These pins are DC coupled and matched to 50 Ohms.  
Blocking capacitors are required.  
3, 5, 8  
4
RFC, RF1, RF2  
N/C  
Not Connected  
Package bottom has exposed metal paddle that must  
be connected to PCB RF ground as well.  
6, 7  
GND  
14  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 233  
HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
Evaluation PCB  
14  
List of Material  
The circuit board used in the final application should  
be generated with proper RF circuit design techniques.  
Signal lines at the RF port should have 50 ohm imped-  
ance and the package ground leads and backside  
ground slug should be connected directly to the ground  
plane similar to that shown above. The evaluation circuit  
board shown above is available from Hittite Microwave  
Corporation upon request.  
Item  
Description  
J1 - J3  
J4 - J7  
C1 - C3  
R1 - R2  
U1  
PC Mount SMA RF Connector  
DC Pin  
100 pF Capacitor, 0402 Pkg.  
100 Ohm Resistor, 0402 Pkg.  
HMC435MS8G SPDT Switch  
104122 Evaluation PCB  
PCB*  
* Circuit Board Material: Rogers 4350  
Note: Pin J6 is unused and need not be connected.  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 234  
HMC435MS8G  
v01.0503  
MICROWAVE CORPORATION  
SPDT NON-REFLECTIVE  
SWITCH, DC - 4.0 GHz  
Notes:  
14  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 235  

相关型号:

HMC435MS8GE

SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
HITTITE

HMC435MS8GERTR

RF/Microwave Switch
HITTITE

HMC435MS8GETR

SPDT, 0MHz Min, 4000MHz Max, 1 Func, 1.8dB Insertion Loss-Max, ROHS COMPLIANT, PLASTIC, SMT, MSOP-86, 8 PIN
HITTITE

HMC435MS8GRTR

RF/Microwave Switch
HITTITE

HMC435MS8GTR

SPDT, 4000MHz Max, 1 Func, 1.8dB Insertion Loss-Max
HITTITE

HMC435MS8G_07

SPDT NON-REFLECTIVE SWITCH, DC - 4.0 GHz
HITTITE

HMC435MS8G_10

SPDT NON-REFLECTIVE SWITCH, DC - 4 GHz
HITTITE

HMC436MS8G

GaAs MMIC DPDT DIVERSITY SWITCH, 4.9 - 5.9 GHz
HITTITE

HMC436MS8GE

Diversity Switch, 4900MHz Min, 5900MHz Max, 1 Func, 1.4dB Insertion Loss-Max, GAAS, ROHS COMPLIANT, PLASTIC, SMT, 8 PIN
HITTITE

HMC436MS8G_07

GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz
HITTITE

HMC436MS8G_10

GaAs MMIC DPDT DIVERSITY OR SP3T SWITCH, 4.9 - 5.9 GHz
HITTITE

HMC437MS8G

SMT GaAs HBT MMIC DIVIDE-BY-3, DC - 7.0 GHz
HITTITE