HMC449_07 [HITTITE]
GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT; 砷化镓MMIC X2有源倍频器， 27 - 33 GHz的输出
| 型号： | HMC449_07 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 27 - 33 GHz OUTPUT |
| 文件： | 总6页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC449
v01.1007
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Typical Applications
Features
The HMC449 is suitable for:
• Point-to-Point & Multi-Point Radios
• VSAT Radios
Output Power: +10 dBm
2
Wide Input Power Range: -4 to +6 dBm
Fo Isolation: 34 dBc @ Fout= 30 GHz
100 kHz SSB Phase Noise: -132 dBc/Hz
Single Supply: 5V@ 50 mA
• Military EW, ECM, C3I
• Test Instrumentation
• Space
Die Size: 1.10 x 1.20 x 0.1 mm
Functional Diagram
General Description
The HMC449 die is
a
x2 active broadband
frequency multiplier chip utilizing GaAs PHEMT
technology. When driven by a 0 dBm signal the
multiplier provides +10 dBm typical output power
from 28 to 32 GHz. The Fo and 3Fo isolations
are >34 dBc and >17 dBc respectively at 30 GHz.
The HMC449 is ideal for use in LO multiplier
chains yielding a reduced parts count vs. traditional
approaches. The low additive SSB Phase Noise of
-132 dBc/Hz at 100 kHz offset helps maintain good
system noise performance. All data is with the chip
in a 50 ohm test fixture connected via 0.076mm x
0.0127mm (3mil x 0.5mil) ribbon bonds of minimal
length 0.31mm (<12mils).
Electrical Specifications, TA = +25° C, Vdd= 5.0V, 0 dBm Drive Level
Parameter
Min.
Typ.
Max.
Units
GHz
GHz
dBm
dBc
Frequency Range, Input
Frequency Range, Output
Output Power
13.5 - 16.5
27 - 33
10
6
Fo Isolation (with respect to output level) Fout= 30 GHz
3Fo Isolation (with respect to output level) Fout= 30 GHz
Input Return Loss
34
17
dBc
13
dB
Output Return Loss
9
dB
SSB Phase Noise (100 kHz Offset)
Supply Current (Idd)
-132
50
dBc/Hz
mA
70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC449
v01.1007
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Output Power vs.
Temperature @ 0 dBm Drive Level
Output Power vs. Drive Level
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
2
+25 C
+85 C
-55 C
-6 dBm
-4 dBm
-2 dBm
0 dBm
+2 dBm
+4 dBm
+6 dBm
26
27
28
29
30
31
32
33
34
26
27
28
29
30
31
32
33
34
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
Output Power vs.
Supply Voltage @ 0 dBm Drive Level
Isolation @ 0 dBm Drive Level
15
14
13
12
11
10
9
15
10
5
0
Fo
2Fo
3Fo
-5
8
7
6
-10
-15
-20
-25
-30
Vdd=4.5V
Vdd=5.0V
Vdd=5.5V
5
4
3
2
1
0
26
27
28
29
30
31
32
33
34
26
27
28
29
30
31
32
33
34
OUTPUT FREQUENCY (GHz)
OUTPUT FREQUENCY (GHz)
Pout vs. Pin @ 3 Frequencies
15
14
13
12
11
10
9
8
7
6
Fout=27 GHz
Fout=30 GHz
Fout=33 GHz
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 37
HMC449
v01.1007
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
2
+25 C
+85 C
-55 C
-5
-10
-15
-20
-5
-10
+25 C
+85 C
-55 C
-15
-20
13
13.5
14
14.5
15
15.5
16
16.5
17
26
27
28
29
30
31
32
33
34
FREQUENCY (GHz)
FREQUENCY (GHz)
SSB Phase Noise Performance,
Fout = 26.4 GHz, Pin = 0 dBm
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
-130
-140
-150
-160
102
103
104
105
106
107
OFFSET FREQUENCY (Hz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 38
HMC449
v01.1007
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
RF Input (Vcc= +5V)
Supply Voltage (Vdd)
Channel Temperature
+20 dBm
Vdd (Vdc)
Idd (mA)
2
+6.0 Vdc
175 °C
4.5
5.0
5.5
49
50
51
Continuous Pdiss (T= 85 °C)
(derate 8.3 mW/°C above 85 °C)
744 mW
Note:
Thermal Resistance
(junction to die bottom)
121 °C/W
Multiplier will operate over full voltage range shown above.
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS .004”
Standard
Alternate
3. TYPICAL BOND PAD IS .004” SQUARE.
4. TYPICAL BOND SPACING IS .006” CENTER TO CENTER.
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METALIZATION: GOLD
7. BACKSIDE METAL IS GROUND.
GP - 2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 39
HMC449
v01.1007
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Pad Description
Pad Number
Function
Description
Interface Schematic
2
Pin is AC coupled and matched
to 50 Ohms.
1
RFIN
2, 3
Vdd
Supply voltage 5V 0.5V.
Pin is AC coupled and matched
to 50 Ohms.
4
RFOUT
GND
Die bottom must be connected to RF ground.
Assembly Diagram
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 40
HMC449
v01.1007
GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 27 - 33 GHz OUTPUT
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
2
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Wire 3 mil Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer
capacitor (mounted eutectically or by conductive epoxy) placed no further than
0.762mm (30 Mils) from the chip is recommended.
Figure 1.
Handling Precautions
0.102mm (0.004”) Thick GaAs MMIC
Follow these precautions to avoid permanent damage.
Ribbon Bond
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
RF Ground Plane
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Figure 2.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The
mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature
of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the
chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required
for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2 - 41
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