HMC460_10 [HITTITE]
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz; 的GaAs PHEMT MMIC低噪声放大器， DC - 20 GHz的
| 型号： | HMC460_10 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz |
| 文件： | 总8页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Typical Applications
The HMC460 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16 dBm @ 10 GHz
Supply Voltage: +8V @ 60 mA
50 Ohm Matched Input/Output
Die Size: 3.12 x 1.63 x 0.1 mm
• Test Instrumentation
Functional Diagram
General Description
The HMC460 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifier die which operates between DC
and 20 GHz. The amplifier provides 14 dB of gain,
2.5 dB noise figure and +16 dBm of output power at
1 dB gain compression while requiring only 60 mA
from a +8V supply. The HMC460 amplifier can easily
be integrated into Multi-Chip-Modules (MCMs) due to
its small size. All data is with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= 8V, Idd= 60 mA*
Parameter
Frequency Range
Min.
Typ.
DC - 6.0
14
Max.
Min.
Typ.
6.0 - 18.0
14
Max.
Min.
11
Typ.
18.0 - 20.0
13
Max.
Units
GHz
dB
Gain
12
12
Gain Flatness
0.5
0.15
0.01
2.5
0.25
0.01
3.0
dB
Gain Variation Over Temperature
Noise Figure
0.008
4.0
0.016
5.0
0.02
3.5
0.02
4.0
dB/ °C
dB
Input Return Loss
17
22
15
dB
Output Return Loss
17
15
15
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
14
17
13
16
12
15
dBm
dBm
dBm
18
18
17
27.5
28
27
Supply Current
60
60
60
mA
(Idd) (Vdd= 8V, Vgg1= -0.9V Typ.)
* Adjust Vgg between -2 to 0V to achieve Idd= 60 mA typical.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 1
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Broadband Gain & Return Loss
Gain vs. Temperature
20
15
10
5
20
16
S21
S11
S22
0
12
-5
-10
-15
-20
-25
-30
-35
+25 C
+85 C
-55 C
8
4
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26
FREQUENCY (GHz)
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
+25 C
+85 C
-55 C
+25 C
+85 C
-55 C
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Low Frequency Gain & Return Loss
10
25
20
15
10
+25 C
+85 C
-55 C
8
6
4
2
0
5
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
-35
-40
0
2
4
6
8
10 12 14 16 18 20 22
0.00001 0.0001
0.001
0.01
0.1
1
10
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 2
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Output P1dB vs. Temperature
Psat vs. Temperature
25
25
+25 C
+85 C
-55 C
22
19
16
13
10
22
19
16
+25 C
+85 C
-55 C
13
10
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
Output IP3 vs. Temperature
32
5
4
3
2
1
0
18
16
14
12
10
8
30
28
26
24
22
+25 C
+85 C
-55 C
GAIN
P1dB
20
NOISE FIGURE
18
0
2
4
6
8
10 12 14 16 18 20 22
7.5
7.75
8
8.25
8.5
FREQUENCY (GHz)
Vdd (V)
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
+25 C
+85 C
-55 C
0
2
4
6
8
10 12 14 16 18 20 22
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 3
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
Gate Bias Voltage (Igg)
+9 Vdc
Vdd (V)
+7.5
Idd (mA)
-2 to 0 Vdc
59
60
62
2.5 mA
+18 dBm
175 °C
+8.0
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
+8.5
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
2.17 W
Thermal Resistance
(channel to die bottom)
41.5 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
Die Packaging Information [1]
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
Standard
Alternate
GP-1 (Gel Pack)
[2]
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 4
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
This pad is DC coupled
and matched to 50 Ohms.
1
RFIN
Power supply voltage for the amplifier.
External bypass capacitors are required
2
Vdd
Low frequency termination. Attach bypass capacitor per
application circuit herein.
3
4
ACG1
This pad is DC coupled
and matched to 50 Ohms.
RFOUT
Low frequency termination. Attach bypass capacitor per
application circuit herein.
5
6
ACG2
Vgg
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
Die bottom must be connected to RF/DC ground.
Die
Bottom
GND
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 5
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Assembly Diagram
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 6
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
0.102mm (0.004”) Thick GaAs MMIC
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of the
die is coplanar with the surface of the substrate. One way to accomplish
this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick
molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
0.102mm (0.004”) Thick GaAs MMIC
Storage: All bare die are placed in either Waffle or Gel based ESD
protective containers, and then sealed in an ESD protective bag for
shipment. Once the sealed ESD protective bag has been opened, all die
should be stored in a dry nitrogen environment.
Wire Bond
0.076mm
(0.003”)
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
RF Ground Plane
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
0.150mm (0.005”) Thick
Moly Tab
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet
or with a sharp pair of bent tweezers. The surface of the chip has fragile
air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is
recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm
(12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 7
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC460
v04.1010
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
1
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1 - 8
相关型号：
HMC461LP3E
Narrow Band Medium Power Amplifier, 1700MHz Min, 2200MHz Max, 2 Func, GAAS, 3 X 3 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-16
HITTITE
©2020 ICPDF网 联系我们和版权申明