HMC475ST89 [HITTITE]
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz; 的InGaP HBT增益模块放大器MMIC ， DC - 4.5 GHz的
| 型号： | HMC475ST89 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.5 GHz |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Typical Applications
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
gain block & LO or PA driver:
Features
P1dB Output Power: +22 dBm
Gain: 21.5 dB
• Cellular / PCS / 3G
Output IP3: +35 dBm
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
Cascadable 50 Ohm I/Os
Single Supply: +8V to +12V
Industry Standard SOT89 Package
Functional Diagram
General Description
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 2.5 GHz
2.5 - 4.5 GHz
DC - 3.0 GHz
3.0 - 4.5 GHz
19.5
17.5
14.5
11.5
9
21.5
19.5
16.5
13.5
12
0.008
11
14
14
13
10
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
0.012
Output Return Loss
Reverse Isolation
dB
dB
25
19.0
18.0
17.5
13.0
11.0
22.0
21.0
19.5
16.0
14.0
35
30
3.5
3.8
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
dB
Supply Current (Icq)
110
135
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 432
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Broadband Gain & Return Loss
Gain vs. Temperature
25
20
15
10
5
26
24
22
20
18
16
14
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
-35
-40
12
+25C
+85C
-40C
10
8
6
4
2
0
0
1
2
3
4
5
6
5
5
0
1
2
3
4
5
5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
-40C
+25C
+85C
-5
-10
-15
-20
-25
-40C
-10
-15
-20
-25
-30
-35
0
1
2
3
4
0
1
2
3
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
-5
8
7
6
5
4
3
2
1
0
+25C
+85C
-40C
-10
-15
-20
-25
-30
-35
-40
+25C
+85C
-40C
0
1
2
3
4
0
1
2
3
4
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 433
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
P1dB vs. Temperature
Psat vs. Temperature
26
24
22
20
18
16
14
12
10
8
28
26
24
22
20
18
16
14
+25C
+85C
-40C
12
10
8
+25C
+85C
-40C
6
6
4
4
2
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 110 mA @ 850 MHz
Output IP3 vs. Temperature
42
39
36
33
30
27
24
21
18
45
40
35
30
15
12
9
6
3
0
25
Gain
+25C
+85C
-40C
P1dB
Psat
OIP3
20
15
8
9
10
11
12
0
1
2
3
4
5
Vs (Vdc)
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 8V, RBIAS= 9.1 Ohms
140
+85C
+25C
-40C
135
130
125
120
115
110
105
100
95
90
85
80
75
6.9
7
7.1
7.2
7.3
7.4
7.5
Vcc (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 434
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+8.0 Vdc
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RF Input Power (RFin)(Vcc = +7.2 Vdc) +17 dBm
Junction Temperature
150 °C
1.09 W
Continuous Pdiss (T = 85 °C)
(derate 16.86 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
59.3 °C/W
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H475
XXXX
HMC475ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
H475
XXXX
MSL1 [2]
HMC475ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 435
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
IN
3
OUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom must be connected to
RF/DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
8V
9V
10V
27 Ω
½ W
12V
43 Ω
1 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
9.1 Ω
¼ W
18 Ω
½ W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
4500
6.8 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 436
HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 116092 [1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PCB Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1206 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC475ST89 / HMC475ST89E
107368 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 437
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HITTITE
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