HMC478ST89E [HITTITE]
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz; 的SiGe HBT增益模块放大器MMIC ， DC - 4.0 GHz的
| 型号： | HMC478ST89E |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4.0 GHz |
| 文件： | 总6页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC478ST89 / 478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
Designer’s Kit
Available
5
Typical Applications
The HMC478ST89 / HMC478ST89E is an ideal RF/IF
Features
P1dB Output Power: +18 dBm
gain block & LO or PA driver:
Gain: 22 dB
• Cellular / PCS / 3G
Output IP3: +33 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Industry Standard SOT89 Package
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer’s Kit
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
General Description
Functional Diagram
The HMC478ST89
& HMC478ST89E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. Packaged
in an industry standard SOT89, the amplifier can be
used as a cascadable 50 Ohm RF/IF gain stage as
well as a LO or PA driver with up to +20 dBm output
power. The HMC478ST89 & HMC478ST89E offers 22
dB of gain with a +30 dBm output IP3 at 850 MHz while
requiring only 62mA from a single positive supply.
The Darlington feedback pair used results in reduced
sensitivity to normal process variations and excellent
gain stability over temperature while requiring a
minimal number of external bias components.
Electrical Specifications, Vs= 5.0 V, Rbias= 18 Ohm, TA = +25° C
Parameter
Min.
Typ.
Max.
0.02
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
19
16
13
11
22
19
16
14
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
Input Return Loss
DC - 4.0 GHz
0.015
dB/ °C
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
15
10
13
dB
dB
dB
DC - 3.0 GHz
3.0 - 4.0 GHz
13
15
dB
dB
Output Return Loss
Reverse Isolation
DC - 4.0 GHz
20
dB
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
15
13
10
8
18
16
13
11
dBm
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
30
28
25
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
DC - 2.0 GHz
2.0 - 4.0 GHz
3
4
dB
dB
Noise Figure
Supply Current (Icq)
62
mA
Note: Data taken with broadband bias tee on device output.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 438
HMC478ST89 / 478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
Broadband Gain & Return Loss
Gain vs. Temperature
30
25
20
15
10
5
30
28
26
24
22
20
18
16
14
12
S21
S11
S22
0
-5
-10
-15
-20
-25
-30
10
+25C
+85C
-40C
8
6
4
2
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
5
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
+25C
+85C
-40C
-5
-10
-15
-10
+25C
+85C
-40C
-20
-25
-30
-15
-20
0
1
2
3
4
5
0
1
2
3
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
9
-5
8
7
6
5
4
3
2
1
0
+25C
+85C
-40C
-10
+25C
+85C
-40C
-15
-20
-25
-30
0
1
2
3
4
5
0
1
2
3
4
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 439
HMC478ST89 / 478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
P1dB vs. Temperature
Psat vs. Temperature
24
22
20
18
16
14
12
10
8
24
22
20
18
16
14
12
10
8
+25C
+85C
-40C
+25C
+85C
-40C
6
6
4
2
0
4
2
0
0
1
2
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 62 mA @ 850 MHz
Output IP3 vs. Temperature
35
36
32
28
24
20
16
30
25
20
Gain
P1dB
Psat
OIP3
12
8
4
+25C
+85C
-40C
15
10
0
0
1
2
3
4
5
5
6
7
8
FREQUENCY (GHz)
Vs (Vdc)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, RBIAS= 18 Ohms
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 18 Ohms @ 850 MHz
80
36
32
28
24
20
16
12
75
+85C
70
65
+25C
60
55
50
45
40
-40C
Gain
8
P1dB
Psat
4
0
OIP3
3.8 3.85 3.9 3.95
4
4.05 4.1 4.15 4.2 4.25 4.3
Vcc (Vdc)
4.5
5
5.5
Vs (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 440
HMC478ST89 / 478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFin)(Vcc = +4.2 Vdc)
Junction Temperature
+6.0 Vdc
+5 dBm
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9.5 mW/°C above 85 °C)
0.615 W
Thermal Resistance
(junction to lead)
105.6 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150 °C
-40 to +85 °C
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
H478
XXXX
HMC478ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
H478
XXXX
MSL1 [2]
HMC478ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 441
HMC478ST89 / 478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
This pin is DC coupled.
An off chip DC blocking capacitor is required.
1
RFIN
3
RFOUT
GND
RF output and DC Bias (Vcc) for the output stage.
These pins and package bottom must be connected to
RF/DC ground.
2, 4
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
RBIAS VALUE
18 Ω
1/8 W
35 Ω
1/4 W
67 Ω
1/2 W
RBIAS POWER RATING
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
900
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
L1
270 nH
0.01 μF
56 nH
100 pF
C1, C2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 442
HMC478ST89 / 478ST89E
v02.1205
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.0 GHz
5
Evaluation PCB
List of Materials for Evaluation PCB 110161 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and package bottom should be
connected directly to the ground plane similar to that
shown. A sufficient number of VIA holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
Item
J1 - J2
J3 - J4
C1, C2
C3
Description
PC Mount SMA Connector
DC Pin
Capacitor, 0402 Pkg.
100 pF Capacitor, 0402 Pkg.
1000 pF Capacitor, 0603 Pkg.
2.2 μF Capacitor, Tantalum
Resistor, 1210 Pkg.
C4
C5
R1
L1
Inductor, 0603 Pkg.
U1
HMC478ST89 / HMC478ST89E
108370 Evaluation PCB
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 443
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HITTITE
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