HMC561LP3 [HITTITE]
SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT; SMT砷化镓MMIC X2有源倍频器， 8 - 21 GHz的输出
| 型号： | HMC561LP3 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 8 - 21 GHz OUTPUT |
| 文件： | 总6页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Typical Applications
Features
The HMC561LP3 / HMC561LP3E are suitable for:
High Output Power: +14 dBm
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: 15 dBc @ Fout= 16 GHz
100 KHz SSB Phase Noise: -139 dBc/Hz
RoHS Compliant 3x3 mm SMT Package
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
7
Functional Diagram
General Description
The HMC561LP3 & HMC561LP3E are x2 active
broadband frequency multipliers utilizing GaAs
PHEMT technology in a leadless RoHS compliant
SMT package. When driven by a +5 dBm signal, the
multiplier provides +14 dBm typical output power from
8 to 21 GHz and the Fo and 3Fo isolations are 15 dBc
at 16 GHz. The HMC561LP3(E) is ideal for use in LO
multiplier chains for Pt to Pt & VSAT Radios yielding
reduced parts count vs. traditional approaches. The
low additive SSB Phase Noise of -139 dBc/Hz at
100 kHz offset helps maintain good system noise
performance. The RoHS packaged HMC561LP3(E)
eliminates the need for wire bonding, and allows the
use of surface mount manufacturing techniques.
Electrical Specifications, TA = +25°C, Vdd = +5V, 5 dBm Drive Level
Parameter
Min.
Typ.
4 - 10.5
8 - 21
14
Max.
Units
GHz
GHz
dBm
dBc
Frequency Range, Input
Frequency Range, Output
Output Power
11
Fo Isolation (with respect to output level)
3Fo Isolation (with respect to output level)
4Fo Isolation (with respect to output level)
Input Return Loss
15
15
dBc
20
dBc
16
dB
Output Return Loss
8
dB
SSB Phase Noise (100 kHz Offset)
Supply Current (Idd) (Vdd = 5V, Vgg = -1.7V Typ.)
*Adjust Vgg between -2.0 and -1.2V to achieve Idd = 98 mA
-139
98
dBc/Hz
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Output Power vs.
Temperature @ 5 dBm Drive Level
Output Power vs. Drive Level
20
18
16
14
12
10
20
15
10
5
7
8
6
4
2
0
+25 C
+85 C
-40 C
0
-2 dBm
0 dBm
2 dBm
-5
4 dBm
6 dBm
-10
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
FREQUENCY (GHz)
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
FREQUENCY (GHz)
Output Power vs.
Supply Voltage @ 5 dBm Drive Level
Isolation @ 5 dBm Drive Level
20
18
16
14
12
10
20
15
10
5
0
-5
-10
-15
8
6
4
2
0
4.5 V
5.0 V
5.5 V
-20
-25
-30
Fo
2 Fo
3 Fo
4 Fo
-35
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
FREQUENCY (GHz)
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
FREQUENCY (GHz)
SSB Phase Noise Performance,
Fout= 16 GHz, Input Power = +3 dBm
Output Power vs. Input Power
20
15
10
5
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
8 GHz
14 GHz
-100
-110
-120
-130
-140
-150
-160
-170
20 GHz
-5
-10
-15
-20
-4
-2
0
2
4
6
8
10
102
103
104
105
106
107
INPUT POWER (dBm)
OFFSET FREQUENCY (Hz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7 - 83
HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-4
-8
-4
-8
-12
-16
-20
-24
7
-12
-28
-32
-36
-40
25 C
+85 C
-40 C
+25 C
-16
+85 C
-40 C
-20
3
4
5
6
7
8
9
10
11
12
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
FREQUENCY (GHz)
FREQUENCY (GHz)
Supply Current vs. Input Power
130
125
120
115
110
105
100
95
90
85
80
75
70
-10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
RF Input (Vdd = +5V)
Supply Voltage (Vdd)
Channel Temperature
+10 dBm
+5.5 Vdc
150 °C
Vdd (Vdc)
Idd (mA)
4.5
97
98
99
5.0
Continuous Pdiss (T= 85 °C)
(derate 9.8 mW/°C above 85 °C)
5.5
635 mW
Note:
Thermal Resistance
(channel to ground paddle)
102 °C/W
Multiplier will operate over full voltage range shown above.
Storage Temperature
Operating Temperature
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7 - 84
HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Outline Drawing
7
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
561
XXXX
HMC561LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
561
XXXX
MSL1 [2]
HMC561LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7 - 85
HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Pin Description
Pin Number
Function
Description
Interface Schematic
Package bottom must also be connected
to RF/DC ground.
1, 3, 10, 12
GND
RFIN
7
Pin is AC coupled and
matched to 50 Ohms.
2
4 - 9, 14, 16
11
These pins are internally not connected; however,
this product was specified with these pins connected
to RF/ DC ground.
N/C
Pin is AC coupled and
matched to 50 Ohms.
RFOUT
Supply voltage 5V 0.5V. External bypass capacitors
of 100 pF, 1,000 pF and 2.2 μF are required.
13
15
Vdd
Vgg
Gate control for multiplier. Adjust to achieve Idd
of 98 mA. Please follow “MMIC Amplifier Biasing
Procedure” Application note.
Application Circuit
Component
C1, C2
Value
100 pF
C3, C4
C5, C6
1,000 pF
2.2 μF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7 - 86
HMC561LP3 / 561LP3E
v00.1206
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 8 - 21 GHz OUTPUT
Evaluation PCB
7
List of Materials for Evaluation PCB 115556 [1]
The circuit board used in the final application should
be generated with proper RF circuit design tech-
niques. Signal lines should have 50 ohm imped-
ance while the package ground leads and exposed
paddle should be connected directly to the ground
plane similar to that shown. A sufficient number of
via holes should be used to connect the top and
bottom ground planes. The evaluation circuit board
shown is available from Hittite upon request.
Item
Description
J1, J2
J3 - J5
C1, C2
C3, C4
C5, C6
U1
PCB Mount SRI K Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
1,000 pF Capacitor, 0603 Pkg.
2.2 μF Tantalum Capacitor
HMC561LP3 / HMC561LP3E x2 Active Multiplier
115555 Eval Board
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
7 - 87
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