HMC571 [HITTITE]
GaAs MMIC I/Q DOWNCONVERTER 21 - 25 GHz; 砷化镓MMIC I / Q下变频器21 - 25 GHz的
| 型号： | HMC571 |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | GaAs MMIC I/Q DOWNCONVERTER 21 - 25 GHz |
| 文件： | 总8页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Typical Applications
Features
The HMC571 is ideal for:
Conversion Gain: 11 dB
Image Rejection: 24 dB
2 LO to RF Isolation: 40 dB
Noise Figure: 3 dB
• Point-to-Point and Point-to-Multi-Point Radio
• Military Radar, EW & ELINT
3
• Satellite Communications
Input IP3: +5 dBm
Die Size: 2.33 x 2.51 x 0.10 mm
Functional Diagram
General Description
The HMC571 is
a compact GaAs MMIC I/Q
downconverter chip which provides a small signal
conversion gain of 10 dB with a noise figure of 3 dB
and 24 dB of image rejection across the frequency
band. The device utilizes an LNA followed by an image
reject mixer which is driven by an active x2 multiplier.
The image reject mixer eliminates the need for a filter
following the LNA, and removes thermal noise at the
image frequency. I and Q mixer outputs are provided
and an external 90° hybrid is needed to select the
required sideband. All data shown below is taken
with the chip mounted in a 50 Ohm test fixture and
includes the effects of 1 mil diameter x 20 mil length
bond wires on each port. This product is a much
smaller alternative to hybrid style image reject mixer
downconverter assemblies.
Electrical Specifications, TA = +25° C, IF = 100 MHz, LO = +4 dBm, Vdd = 3.5 Vdc*
Parameter
Frequency Range, RF
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
21.2 - 23.7
21 - 25
9 - 14
DC - 3.5
11
GHz
GHz
GHz
dB
Frequency Range, LO
Frequency Range, IF
Conversion Gain (As IRM)
Noise Figure
9 - 14
DC - 3.5
11
9
8
3
3
dB
Image Rejection
19
-9
22
19
-11
38
28
-2
24
dB
1 dB Compression (Input)
2 LO to RF Isolation
2 LO to IF Isolation
IP3 (Input)
-6
-8
dBm
dB
38
28
+2
45
45
32
32
dB
+5
+5
dBm
dB
Amplitude Balance
Phase Balance
0.3
5
0.7
5
Deg
mA
Total Supply Current
*Data taken as IRM with external IF hybrid
125
165
125
165
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Data Taken As IRM With External IF Hybrid
Conversion Gain vs. Temperature
Image Rejection vs. Temperature
20
30
15
10
25
3
20
5
+25C
+85C
-55C
15
10
5
+25C
+85C
-55C
0
-5
-10
20
21
22
23
24
25
25
25
26
26
26
20
21
22
23
24
25
26
28
26
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
Return Loss
20
0
15
10
5
-5
-10
-15
-20
-25
0
-5
0dBm
+2dBm
+4dBm
+6dBm
+8dBm
RF
LO
-10
20
21
22
23
24
8
10
12
14
16
18
20
22
24
26
RF FREQUENCY (GHz)
FREQUENCY (GHz)
Input P1dB vs. Temperature
Input IP3 vs. LO Drive
0
15
-2
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
-4
10
5
-6
-8
-10
-12
0
-14
-16
-18
-20
+25C
+85C
-55C
-5
-10
20
21
22
23
24
20
21
22
23
24
25
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Quadrature Channel Data Taken Without IF Hybrid
Isolations
IF Bandwidth*
10
20
15
10
5
RF/IF2
0
-10
-20
-30
-40
-50
-60
3
RF/IF1
CONVERSION GAIN
RETURN LOSS
0
2LO/IF1
-5
2LO/IF2
2LO/RF
-10
-15
-20
20
21
22
23
24
25
26
0.5
1
1.5
2
2.5
3
3.5
RF FREQUENCY (GHz)
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
Phase Balance vs. LO Drive
2.5
20
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
2
1.5
1
15
10
5
LO = 0 dBm
LO = +2 dBm
LO = +4 dBm
LO = +6 dBm
LO = +8 dBm
0.5
0
0
-0.5
-1
-5
20
21
22
23
24
25
26
20
21
22
23
24
25
26
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Noise Figure vs. LO Drive,
Noise Figure vs. LO Drive,
LO Frequency = 10.3 GHz
IF Frequency = 100 MHz
8
6
5
4
3
2
1
0
0dBm
+2dBm
+4dBm
+6dBm
+8dBm
0dBm
+2dBm
+4dBm
+6dBm
+8dBm
6
4
2
0
0.5
1
1.5
2
2.5
3
3.5
4
18
19
20
RF FREQUENCY (GHz)
21
22
IF FREQUENCY (GHz)
* Conversion gain data taken with external IF hybrid, LO frequency fixed at 10.3 GHz and RF varied
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
MxN Spurious Outputs
Absolute Maximum Ratings
nLO
RF
+2 dBm
+ 13 dBm
5.5V
mRF
0
1
2
3
4
LO Drive
0
1
2
3
4
xx
33
67
xx
xx
28
30
79
xx
xx
19
0
26
29
67
79
xx
34
44
44
87
xx
Vdd
Channel Temperature
175°C
62
xx
xx
Continuous Pdiss (T=85°C)
(derate 10.2 mW/°C above 85°C)
3
920 mW
Thermal Resistance (RTH
(channel to package bottom)
)
98.3 °C/W
RF = 22 GHz @ -20 dBm
LO = 10.5 GHz @ +4 dBm
Data taken without IF hybrid
All values in dBc below IF power level (1RF -2LO = 1 GHz)
Storage Temperature
-65 to +150 °C
-55 to +85 °C
Class 1B
Operating Temperature
ESD Sensitivity (HBM)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Outline Drawing
3
NOTES:
Die Packaging Information [1]
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS 0.004”
3. BOND PAD METALIZATION: GOLD
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. OVERALL DIE SIZE 0.002
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Pad Descriptions
Pad Number
Function
Description
Interface Schematic
Power supply for RF LNA.
External RF bypass capacitors are required.
1
VddRF
Power supply for second stage of LO amplifier.
External RF bypass capacitors are required.
2
VddLO2
3
Power supply for first stage of LO amplifier.
External RF bypass capacitors are required.
3
4
VddLO
LO
This pad is AC coupled
and matched to 50 Ohms.
This pad is DC coupled for applications not requir-
ing operation to DC. This port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary frequency range.
For operation to DC, this pad must not source /sink more
than 3 mA of current or die non - function and possible
die failure will result.
5
IF1
IF2
6
7
This pad is AC coupled
and matched to 50 Ohms.
RF
The backside of the die must be
connected to RF/DC ground.
GND
Typical Application
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 143
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Assembly Drawing
3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 144
HMC571
v03.0808
GaAs MMIC I/Q DOWNCONVERTER
21 - 25 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
0.102mm (0.004”) Thick GaAs MMIC
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Wire Bond
0.076mm
(0.003”)
3
RF Ground Plane
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Handling Precautions
Follow these precautions to avoid permanent damage.
Figure 1.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
Mounting
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
fl a t .
Figure 2.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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