HMC580ST89TR [HITTITE]

Wide Band Low Power Amplifier,;
HMC580ST89TR
型号: HMC580ST89TR
厂家: HITTITE MICROWAVE CORPORATION    HITTITE MICROWAVE CORPORATION
描述:

Wide Band Low Power Amplifier,

放大器
文件: 总6页 (文件大小:203K)
中文:  中文翻译
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HMC580ST89 / 580ST89E  
v04.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 1 GHz  
Typical Applications  
Features  
The HMC580ST89 / HMC580ST89E is ideal forr:  
P1dB Output Power: +22 dBm  
8
• Cellular / PCS / 3G  
Gain: 22 dB  
• Fixed Wireless & WLAN  
Output IP3: +37 dBm  
Cascadable 50 Ohm I/Os  
Single Supply: +5V  
• CATV, Cable Modem & DBS  
• Microwave Radio & Test Equipment  
• IF & RF Applications  
Industry Standard SOT89 Package  
Functional Diagram  
General Description  
The HMC580ST89 & HMC580ST89E are InGaP  
Heterojunction Bipolar Transistor (HBT) Gain  
Block MMIC SMT amplifiers covering DC to 1 GHz.  
Packaged in an industry standard SOT89, the  
amplifier can be used as a cascadable 50 Ohm RF  
or IF gain stage as well as a PA or LO driver with  
up to +26 dBm output power. The HMC580ST89(E)  
offers 22 dB of gain with a +37 dBm output IP3 at 250  
MHz, and can operate directly from a +5V supply. The  
HMC580ST89(E) exhibits excellent gain and output  
power stability over temperature, while requiring a  
minimal number of external bias components.  
Electrical Specifications, Vs= 5V, Rbias= 1.8 Ohm, TA = +25° C  
Parameter  
Min.  
Typ.  
Max.  
Units  
DC - 0.25 GHz  
0.25 - 0.50 GHz  
0.50 - 1.00 GHz  
19  
18.5  
15  
22  
21  
17  
dB  
dB  
dB  
Gain  
Gain Variation Over Temperature  
Input Return Loss  
DC - 1.0 GHz  
0.005  
dB/ °C  
DC - 0.25 GHz  
0.25 - 0.50 GHz  
0.50 - 1.00 GHz  
35  
28  
19  
dB  
dB  
dB  
DC - 0.50 GHz  
0.50 - 1.00 GHz  
12  
11  
dB  
dB  
Output Return Loss  
Reverse Isolation  
DC - 1.0 GHz  
23  
dB  
DC - 0.25 GHz  
0.25 - 0.50 GHz  
0.50 - 1.00 GHz  
19  
17.5  
16  
22  
20.5  
19  
dBm  
dBm  
dBm  
Output Power for 1 dB Compression (P1dB)  
DC - 0.25 GHz  
0.25 - 0.50 GHz  
0.50 - 1.00 GHz  
37  
35  
33  
dBm  
dBm  
dBm  
Output Third Order Intercept (IP3)  
(Pout= 0 dBm per tone, 1 MHz spacing)  
Noise Figure  
DC - 1.0 GHz  
2.8  
88  
dB  
Supply Current (Icq)  
110  
mA  
Note: Data taken with broadband bias tee on device output.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 146  
HMC580ST89 / 580ST89E  
v04.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 1 GHz  
Broadband Gain & Return Loss  
Gain vs.Temperature  
25  
20  
15  
10  
5
24  
8
20  
16  
S21  
S11  
S22  
0
-5  
12  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
+25C  
+85C  
-40C  
8
4
0
0
0.5  
1
1.5  
2
2.5  
3
0
0.25  
0.5  
0.75  
1
1.25  
1.5  
1.5  
1.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Input Return Loss vs.Temperature  
Output Return Loss vs.Temperature  
0
0
-5  
+25C  
+85C  
-5  
-40C  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-10  
-15  
+25C  
+85C  
-40C  
-20  
-25  
0
0.3  
0.5  
0.8  
1
1.3  
1.5  
0
0.25  
0.5  
0.75  
1
1.25  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Reverse Isolation vs.Temperature  
Noise Figure vs.Temperature  
0
10  
-5  
8
-10  
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
6
4
2
0
-15  
-20  
-25  
-30  
-35  
0
0.25  
0.5  
0.75  
1
1.25  
1.5  
0
0.25  
0.5  
0.75  
1
1.25  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 147  
HMC580ST89 / 580ST89E  
v04.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 1 GHz  
P1dB vs. Temperature  
Psat vs. Temperature  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
28  
8
24  
20  
16  
+25C  
+85C  
-40C  
+25C  
+85C  
-40C  
12  
8
6
4
4
2
0
0
0
0.3  
0.5  
0.8  
1
1.3  
1.5  
0
0.25  
0.5  
0.75  
1
1.25  
1.5  
FREQUENCY (GHz)  
FREQUENCY (GHz)  
Gain, Power & OIP3 vs. Supply Voltage  
Output IP3 vs. Temperature  
for Constant Icc = 88 mA @ 850 MHz  
36  
45  
32  
28  
24  
20  
16  
40  
35  
30  
Gain  
P1dB  
Psat  
IP3  
12  
8
4
+25C  
+85C  
-40C  
25  
20  
0
4.5  
5
5.5  
0
0.25  
0.5  
0.75  
1
1.25  
1.5  
Vs (V)  
FREQUENCY (GHz)  
Vcc vs. Icc Over Temperature for  
Fixed Vs= 5V, RBIAS= 1.8 Ohms  
ACPR vs. Channel Output Power  
94  
-20  
+85C  
92  
-25  
WCDMA 140MHz  
-30  
90  
WCDMA 400MHz  
+25C  
CDMA2000 140MHz  
CDMA2000 400MHz  
-35  
88  
86  
84  
82  
-40  
-45  
-50  
-55  
-60  
-65  
-40C  
80  
78  
4.82  
4.83  
4.84  
4.85  
4.86  
4.87  
2
4
6
8
10  
12  
14  
16  
18  
Vcc (V)  
CHANNEL OUTPUT POWER (dBm)  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 148  
HMC580ST89 / 580ST89E  
v04.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 1 GHz  
Absolute Maximum Ratings  
Collector Bias Voltage (Vcc)  
+5.5 Vdc  
8
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RF Input Power (RFIN)(Vcc = +4.2 Vdc) +10 dBm  
Junction Temperature  
150 °C  
0.59 W  
Continuous Pdiss (T = 85 °C)  
(derate 9 mW/°C above 85 °C)  
Thermal Resistance  
(junction to lead)  
110 °C/W  
Storage Temperature  
Operating Temperature  
ESD Sensitivity (HMB)  
-65 to +150 °C  
-40 to +85 °C  
Class 1C  
Outline Drawing  
NOTES:  
1. PACKAGE BODY MATERIAL:  
MOLDING COMPOUND MP-180S OR EQUIVALENT.  
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.  
3. LEAD PLATING: 100% MATTE TIN.  
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]  
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.  
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.  
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.  
Package Information  
Part Number  
Package Body Material  
Lead Finish  
MSL Rating  
MSL1 [1]  
Package Marking [3]  
H580  
XXXX  
HMC580ST89  
Low Stress Injection Molded Plastic  
Sn/Pb Solder  
H580  
XXXX  
MSL1 [2]  
HMC580ST89E  
RoHS-compliant Low Stress Injection Molded Plastic  
100% matte Sn  
[1] Max peak reflow temperature of 235 °C  
[2] Max peak reflow temperature of 260 °C  
[3] 4-Digit lot number XXXX  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 149  
HMC580ST89 / 580ST89E  
v04.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 1 GHz  
Pin Descriptions  
Pin Number  
Function  
Description  
Interface Schematic  
8
This pin is DC coupled.  
An off chip DC blocking capacitor is required.  
1
IN  
3
OUT  
GND  
RF output and DC Bias (Vcc) for the output stage.  
These pins and package bottom  
must be connected to RF/DC ground.  
2, 4  
Application Circuit  
Recommended Bias Resistor Values  
for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc, Vs > +5V  
Supply Voltage (Vs)  
6V  
8V  
Note:  
1. External blocking capacitors are required on  
RFIN and RFOUT.  
2. RBIAS provides DC bias stability over temperature.  
RBIAS VALUE  
13 Ω  
¼ W  
36 Ω  
½ W  
RBIAS POWER RATING  
Recommended Component Values for Key Application Frequencies with Vs = +5V  
Frequency (MHz)  
Component  
50  
250  
400  
900  
56 nH  
L1  
270 nH  
0.01 μF  
0 Ohms  
110 nH  
820 pF  
1.5 Ohms  
110 nH  
820 pF  
1.5 Ohms  
C1, C2  
Rbias  
100 pF  
1.8 Ohms  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 150  
HMC580ST89 / 580ST89E  
v04.0710  
InGaP HBT GAIN BLOCK  
MMIC AMPLIFIER, DC - 1 GHz  
Evaluation PCB  
8
List of Materials for Evaluation PCB 116402 [1]  
The circuit board used in the final application  
should use RF circuit design techniques. Signal  
lines should have 50 Ohm impedance while the  
package ground leads and package bottom should  
be connected directly to the ground plane similar to  
that shown. A sufficient number of via holes should  
be used to connect the top and bottom ground  
planes. The evaluation board should be mounted  
to an appropriate heat sink. The evaluation circuit  
board shown is available from Hittite upon request.  
Item  
J1 - J2  
J3 - J4  
C1, C2  
C3  
Description  
PCB Mount SMA Connector  
DC Pin  
Capacitor, 0402 Pkg.  
100 pF Capacitor, 0402 Pkg.  
1000 pF Capacitor, 0603 Pkg.  
2.2 μF Capacitor, Tantalum  
Resistor, 1206 Pkg.  
C4  
C5  
R1  
L1  
Inductor, 0603 Pkg.  
U1  
HMC580ST89 / HMC580ST89E  
107368 Evaluation PCB  
[2]  
PCB  
[1] Reference this number when ordering complete evaluation PCB  
[2] Circuit Board Material: Rogers 4350  
[3] Evaluation board tuned for 900 MHz operation  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
8 - 151  

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