HMC593LP3ETR [HITTITE]
Narrow Band Low Power Amplifier,;
| 型号： | HMC593LP3ETR |
| 厂家： | 
HITTITE MICROWAVE CORPORATION |
| 描述： | Narrow Band Low Power Amplifier, 射频和微波 射频放大器 微波放大器 |
| 文件： | 总8页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
8
Typical Applications
The HMC593LP3(E) is ideal for:
• Wireless Infrastructure
• Fixed Wireless
Features
Noise Figure: 1.2 dB
Output IP3: +29 dBm
Gain: 19 dB
• WiMAX WiBro / 4G
Low Loss LNA Bypass Path
Single Supply: +3V or +5V
50 Ohm Matched Output
• Tower Mounted Amplifiers
Functional Diagram
General Description
The HMC593LP3(E) is a versatile, high dynamic
range GaAs MMIC Low Noise Amplifier that
integrates a low loss LNA bypass mode on the IC.
The amplifier is ideal for WiBro & WiMAX receivers
operating between 3.3 and 3.8 GHz and provides
1.2 dB noise figure, 19 dB of gain and +29 dBm IP3
from a single supply of +5V @ 40mA. Input and output
return losses are 23 and 13 dB respectively with no
external matching components required. A single
control line (0/Vdd) is used to switch between LNA
mode and a low 2 dB loss bypass mode reducing the
current consumption to 10 μA.
Electrical Specifications, TA = +25° C
Vdd = +3V
Bypass Mode
Vdd = +5V
Bypass Mode
Parameter
LNA Mode
Typ. Max. Min.
LNA Mode
Typ. Max. Min.
Units
Min.
14
Typ. Max. Min.
3.3 - 3.8
Typ. Max.
Frequency Range
GHz
dB
Gain
17
0.011
1.4
-3
-2
16
19
0.011
1.2
23
-3
-2
Gain Variation Over Temperature
Noise Figure
0.002
0.002
dB / °C
dB
1.8
1.6
Input Return Loss
23
30
25
30
25
dB
Output Return Loss
Reverse Isolation
12
13
dB
39
36
dB
Power for 1dB Compression (P1dB)*
Saturated Output Power (Psat)
10
13
30
13
16
30
dBm
dBm
13.5
17
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone,
1 MHz tone spacing)
22
29
dBm
Supply Current (Idd)
20
25
0.01
343
40
50
0.01
343
mA
ns
LNA Mode to Bypass Mode
Switching
428
428
Speed
Bypass Mode to LNA Mode
ns
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 190
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
LNA Broadband Gain
& Return Loss @ Vdd= 3V
LNA Broadband Gain
& Return Loss @ Vdd= 5V
8
30
30
20
10
20
10
0
S21
S11
S22
0
-10
-20
-30
-40
-10
-20
-30
S21
S11
S22
-40
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.8
3.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.8
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Gain vs. Temperature
LNA Noise Figure vs. Temperature
21
2.5
Vdd = 5V
20
T=+85C
2
19
18
17
T=+25C
1.5
T=-40C
1
16
Vdd = 3V
0.5
+25C
Vdd=3V
Vdd=5V
15
+85C
-40C
14
0
3.3
3.3
3.4
3.5
3.6
3.7
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Gain vs. Vdd
LNA Noise Figure vs. Vdd
20
19
18
17
16
15
1.8
1.7
1.6
1.5
1.4
1.3
14
1.2
+2.4V
+2.7V
+3.0V
+4.5V
+5.0V
+5.5V
2.4V
2.7V
3.0V
4.5V
5.0V
5.5V
13
1.1
12
1
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 191
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
LNA Input Return Loss
vs. Temperature @ Vdd= 3V
LNA Input Return Loss
8
vs. Temperature @ Vdd= 5V
0
0
+25C
+85C
-40C
+25C
+85C
-40C
-10
-20
-30
-40
-10
-20
-30
-40
3.3
3.4
3.5
3.6
3.7
3.8
3.8
3.8
3.3
3.4
3.5
3.6
3.7
3.8
3.8
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Output Return Loss
vs. Temperature @ Vdd= 5V
LNA Output Return Loss
vs. Temperature @ Vdd= 3V
0
0
+25C
+85C
-40C
+25C
-5
-10
-15
-20
-25
-5
+85C
-40C
-10
-15
-20
-25
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Output IP3 vs. Temperature
LNA Output IP3 vs. Vdd
32
34
Vdd = 5V
30
30
26
22
18
28
26
+25C
+85C
-40C
24
22
Vdd = 3V
20
18
16
14
10
2.4V
2.7V
3.0V
4.5V
5.0V
5.5V
3.3
3.4
3.5
3.6
3.7
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 192
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
8
LNA Psat vs. Temperature
LNA Psat vs. Vdd
20
22
2.4V
2.7V
3.0V
4.5V
5.0V
5.5V
+25C
+85C
-40C
Vdd = 5V
20
18
16
14
12
10
18
16
14
12
10
Vdd = 3V
3.3
3.4
3.5
3.6
3.7
3.8
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Output P1dB vs. Temperature
LNA Output P1dB vs. Vdd
20
20
+25C
18
16
14
12
Vdd = 5V
+85C
-40C
18
16
14
12
10
Vdd = 3V
10
2.4V
2.7V
3.0V
4.5V
5.0V
5.5V
8
6
3.3
3.4
3.5
3.6
3.7
3.8
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
LNA Reverse Isolation vs. Temperature
-25
+25C
-30
+85C
-40C
Vdd = 3V
-35
Vdd = 5V
-40
-45
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 193
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Bypass Mode
Broadband Gain & Return Loss
Bypass Mode
Broadband Gain & Return Loss
8
[1]
[2]
0
0
-5
-10
-15
-20
-25
-5
S21
S11
S22
S21
S11
S22
-10
-15
-20
-25
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3.8
3.8
FREQUENCY (GHz)
FREQUENCY (GHz)
Bypass Mode
Insertion Loss vs. Temperature
Bypass Mode
Insertion Loss vs. Temperature
[1]
[2]
0
0
-1
-1
-2
-2
+25C
-3
-4
-5
-3
+85C
-40C
+25C
+85C
-40C
-4
-5
3.3
3.4
3.5
3.6
3.7
3.8
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
Bypass Mode, Input IP3 vs. Temperature
Bypass Mode, P1dB vs. Temperature
0
0
-1
-1
-2
-2
+25C
+85C
-40C
-3
-4
-5
-3
+25C
+85C
-40C
-4
-5
3.3
3.4
3.5
3.6
3.7
3.8
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
FREQUENCY (GHz)
[1] Vdd = 3V [2] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 194
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Typical Supply Current vs. Vdd
8
Bypass Mode, Psat vs. Temperature
Vdd (V)
Idd (mA)
0
+2.4
9
+2.7
12
16
33
39
44
-1
-2
+3.0
+4.5
+5.0
+5.5
-3
Absolute Maximum Ratings
+25C
-4
-5
+85C
-40C
Drain Bias Voltage (Vdd)
+8 V
RF Input Power (RFIN)
(Vdd = +5.0 Vdc)
LNA Mode +15 dBm
Bypass Mode +30 dBm
3.3
3.4
3.5
3.6
3.7
3.8
Channel Temperature
150 °C
FREQUENCY (GHz)
Continuous Pdiss (T = 85 °C)
(derate 13 mW/°C above 85 °C)
850 mW
Thermal Resistance
(channel to ground paddle)
76.9 °C/W
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
-65 to +150° C
-40 to +85° C
Class 1A
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
MSL1 [1]
Package Marking [3]
593
XXXX
HMC593LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
593
XXXX
HMC593LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1 [2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 195
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
8
Truth Table
LNA Mode
Vctl= Vdd
Vctl= 0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Bypass Mode
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 5, 6, 8,
9, 11 - 13
No connection necessary.
These pins may be connected to RF/DC ground.
N/C
This pin is AC coupled
and matched to 50 Ohms.
3
4, 7, 15
10
RFIN
GND
These pins must be connected to RF/DC ground.
This pin is AC coupled
and matched to 50 Ohms.
RFOUT
Power supply voltage. Bypass capacitors are required. See
application circuit.
14
Vdd
16
Vctl
LNA/Bypass Mode Control Voltage. See truth table.
Application Circuit
Component
C1, C2
C3
Value
100pF
10KpF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 196
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
8
Evaluation PCB
List of Materials for Evaluation PCB 117160 [1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be con-
nected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
Item
Description
J1 - J2
J3 - J6
C1, C2
C3
PCB Mount SMA RF Connector
DC Pin
100 pF Capacitor, 0402 Pkg.
10 KpF Capacitor, 0402 Pkg.
HMC593LP3 / HMC593LP3E Amplifier
117158 Evaluation Board
U1
[2]
PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 197
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