HM15N50 [HMSEMI]
500V N-Channel MOSFET;
| 型号： | HM15N50 |
| 厂家： | 
H&M Semiconductor |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HM15N50/HM15N50F
HM15N50/HM15N50F
500V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using SL semi‘s
advanced planar stripe DMOS technology.
•
•
•
•
•
15.0A, 500V, RDS(on) = 0.42Ω @VGS = 10 V
Low gate charge ( typical 45nC)
Fast s witching
100% avalanche tested
Improved dv/dt capability
This advanced technology has been espe cially tailored to
minimize o n-state r esistance, pr ovide superior switching
performance, and withstand high ener gy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency sw itched mode power supplies,
active power factor corr ection based on half br idge
topology.
{D
●
◀
▲
●
●
G
{
TO-220F
TO-220
G D
S
G
D S
{S
Absolute Maximum Ratings
T = 25°Cunless otherwise noted
C
Symbol
VDSS
Parameter
HM15N50
HM15N50F
Units
V
Drain-Source Voltage
500
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
15.0
8.0
52
15.0*
8.0 *
52 *
A
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
EAR
Gate-Source Voltage
± 30
860
19.5
4.5
V
(Note 2)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
mJ
mJ
V/ns
W
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
dv/dt
PD
195
48
- Derate above 25°C
Operating and Storage Temperature Range
1.56
0.39
W/°C
°C
TJ, TSTG
TL
-55 to +150
300
Maximum lead temperature for soldering purposes,
°C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
Parameter
HM15N50
HM15N50F
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.64
0.5
2.58
--
RθCS
RθJA
62.5
62.5
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 µA
Drain-Source Breakdown Voltage
500
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C
0.6
V/°C
/
∆TJ Coefficient
IDSS
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
3.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID
=
6.5 A
--
0.35
0.42
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1600
200
20
--
--
--
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
25
100
130
100
45
--
--
--
--
-
ns
ns
VDD = 250 V, ID
G = 25 Ω
=
=
15.0A,
R
ns
(Note 4, 5)
ns
Qg
nC
nC
nC
VDS = 400 V, ID
GS = 10 V
15.0 A,
Qgs
Qgd
8
--
--
V
(Note 4, 5)
19
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
15.0
45.0
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 15.0 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
VGS = 0 V, IS = 15.0 A,
dIF / dt = 100 A/µs
410
4.5
ns
µC
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6 mH, I
=
15.0 A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I
≤
15.0 A, di/dt ≤ 200A/µs, V ≤ BV Starting T = 25°C
SD
DD
DSS, J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
Figure 9-2. Maximum Safe Operating Area
for HM15N50
for HM15N50F
Figure 10. Maximum Drain Current
vs Case Temperature
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Typical Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve
for HM15N50
Figure 11-2. Transient Thermal Response Curve
for HM15N50F
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Gate Charge Test Circuit & Waveform
V
GS
SameType
asDUT
50KΩ
Q
g
200nF
12V
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
V 10%
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
ton
toff
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
---- --------------------
L
1
EE = LI
2
2
AS
AS
V
DS
BV -V
DSS DD
BV
DSS
I
ID
AS
R
G
V
DD
ID(t)
V (t)
DS
V
DD
DUT
10V
tp
tp
Time
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Peak Diode Recovery dv/dt Test Circuit & Waveforms
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Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM15N50/HM15N50F
Package Dimensions
TO-220F
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
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